Abbott Laboratories Corporation

Tokyo Institute of Technology

Kabushiki Kaisha Toshiba

Ken Komiya

Toru Yoshimura

Makoto Komori

Fumitaka Arai

Takashi Kobayashi

Wataru Sakamoto

Tatsuya Kato

Shinichi Sotome

Yoshimura Toru

Disclosed are methods for detecting a target nucleic acid in a sample. The methods include contacting said sample, in the presence of a polymerase and an endonuclease, with a sequence conversion oligonucleotide. Also disclosed are methods for detecting a target nucleic acid in a sample in which said sample is contacted, in the presence of a polymerase and an endonuclease, with a sequence conversion oligonucleotide and a signal amplifier oligonucleotide. The disclosure also provides compositions and kits comprising such sequence conversion and signal amplifier oligonucleotides.

Sequence conversion and signal amplifier DNA having poly DNA spacer sequences and detection methods using same

Disclosed are methods for detecting a target nucleic acid in a sample. The methods include contacting said sample, in the presence of a polymerase and an endonuclease, with a sequence conversion oligonucleotide having locked nucleic acids at select positions sufficient to decrease non-specific background signal amplification. Also disclosed are methods for detecting a target nucleic acid in a sample in which said sample is contacted, in the presence of a polymerase and an endonuclease, with a sequence conversion oligonucleotide and a signal amplifier oligonucleotide, both having locked nucleic acids at select positions sufficient to decrease non-specific background signal amplification. The disclosure also provides compositions and kits comprising such sequence conversion and signal amplifier oligonucleotides.

Sequence conversion and signal amplifier DNA having locked nucleic acids and detection methods using same

Disclosed are methods for detecting a target nucleic acid in sample, which include contacting the sample with an oligonucleotide having a hairpin structure, where the oligonucleotide includes, in the 5' to 3&#x2032; direction, an arbitrary sequence, an endonuclease recognition site for a nicking reaction, a sequence complementary to the arbitrary sequence, and a sequence complementary to the target nucleic acid; a polymerase; and an endonuclease capable of nicking the endonuclease recognition site. The disclosure also provides compositions and kits comprising an oligonucleotide having a hairpin structure, where the oligonucleotide includes, in the 5&#x2032; to 3&#x2032; direction an arbitrary sequence, an endonuclease recognition site for a nicking reaction, a sequence complementary to the arbitrary sequence, and a sequence complementary to a target nucleic acid.

Covered sequence conversion DNA and detection methods

[Problem] To provide a method for detecting a nucleic acid (such as DNA and RNA) under isothermal conditions, in particular a method by which a short-chain nucleic acid can be directly detected. [Solution] A method for detecting a target nucleic acid in a sample of the present invention comprises: (a) a step of preparing a first oligonucleotide which comprises, in the direction from 5' to 3&#x2032;, a first arbitrary sequence, an endonuclease recognition site that is used in a nicking reaction, and a sequence complementary to the target nucleic acid; (b) a step of carrying out a nucleic acid amplification reaction using the target nucleic acid contained in the sample as a primer in the presence of an endonuclease which recognizes the endonuclease recognition site that is used in a nicking reaction; and (c) a step of detecting an oligonucleotide which is obtained by the nucleic acid amplification reaction and comprises a sequence complementary to the first arbitrary sequence.

Method and kit for detecting target nucleic acid

A nonvolatile semiconductor memory device according to an embodiment includes: a memory cell array in which a plurality of NAND cell units are arranged, the NAND cell units including a plurality of memory cells, and select gate transistors, the memory cell including a semiconductor layer, a gate insulating film, a charge accumulation layer, and a control gate; and a control circuit. The control circuit adjusts a write condition of each of the memory cells in accordance with write data to each of the memory cells and memory cells adjacent to the memory cells within the data to be written.

Nonvolatile semiconductor memory device and method for manufacuring the same

A nonvolatile semiconductor memory device comprises: element isolation insulating films formed in a semiconductor substrate in a first direction; and element regions formed in a region sandwiched by the element isolation insulating film, with MONOS type memory cells. The MONOS type memory cell comprises: a tunnel insulating film disposed on the element region; a charge storage film disposed continuously on the element regions and the element isolation insulating films. The charge storage film comprises: a charge film disposed on the element region and having a certain charge trapping characteristic; and a degraded charge film disposed on the element isolation insulating film and having a charge trapping characteristic inferior to that of the charge film. The degraded charge film has a length of an upper surface thereof set shorter than a length of a lower surface thereof in a cross-section along the first direction.

Growing community of inventors

Yokohama, Japan

Ken Komiya