Sumco Corporation

Japan Super Quartz Corporation

Ken Kitahara

Toshiaki Sudo

Tadahiro Sato

Eriko Kitahara

Hiroshi Kishi

Takuma Yoshioka

Tomokazu Katano

Masami Ohara

Masanori Fukui

Takeshi Fujita

Koichi Suzuki

Makiko Hinooka

Minoru Kanda

Masaru Sato

Shinsuke Yamazaki

Makiko Kodama

Takashi Watanabe

Akihiro Aiba

Kazushi Ousyuya

Fumie Yoshida

An infrared transmissivity measurement method is for measuring an infrared transmissivity of a quartz glass crucible which includes a transparent layer made of quartz glass that does not contain bubbles, a bubble layer formed outside the transparent layer and made of quartz glass containing bubbles, and a semi-molten layer formed outside the bubble layer and made of raw material silica powder solidified in a semi-molten state. The infrared transmissivity measurement method includes processing an outer surface of the quartz glass crucible formed by the semi-molten layer to lower a surface roughness of the outer surface; and measuring an infrared transmissivity of the quartz glass crucible based on infrared light passing through the outer surface after processing the outer surface.

Infrared transmissivity measurement method of quartz glass crucible

A quartz glass cruciblehaving a cylindrical side wall portion, a bottom portion, and a corner portionconnecting the side wall portionand the bottom portionto each other includes a transparent layermade of quartz glass, and a bubble layermade of quartz glass and formed outside the transparent layer. A ratio of an infrared transmittance of the corner portionat a maximum thickness position of the corner portionto an infrared transmittance of the side wall portionis 0.3 or more and 0.99 or less, and an absolute value of a rate of change in infrared transmittance in a height direction along a wall surface of the crucible from a center of the bottom portiontoward an upper end of the side wall portionis 3%/cm or less.

Quartz glass crucible

A quartz glass cruciblehaving a cylindrical side wall portion, a bottom portion, and a corner portionincludes a transparent layeras an innermost layer made of quartz glass, a semi-molten layeras an outermost layer made of raw material silica powder solidified in a semi-molten state, and a bubble layermade of quartz glass interposed therebetween. An infrared transmissivity of the corner portionin a state where the semi-molten layeris removed is 25 to 51%, the infrared transmissivity of the corner portionin the state where the semi-molten layeris removed is lower than an infrared transmissivity of the side wall portion, and the infrared transmissivity of the side wall portionin the state where the semi-molten layeris removed is lower than an infrared transmissivity of the bottom portion

Quartz glass crucible, manufacturing method of silicon single crystal using the same, and infrared transmissivity measurement method and manufacturing method of quartz glass crucible

A silica glass crucible includes a cylindrical side wall portion, a curved bottom portion, and a corner portion that is provided between the side wall portion and the bottom portion and has a higher curvature than a curvature of the bottom portion, in which a first region provided from a crucible inner surface to a middle in a thickness direction, a second region that is provided outside the first region in the thickness direction and has a different strain distribution from the first region, and a third region that is provided outside the second region in the thickness direction and up to the crucible outer surface and has a different strain distribution from the second region, are provided, and internal residual stresses of the first region and the third region are compressive stresses, whereas an internal residual stress of the second region includes a tensile stress.

Silica glass crucible

A vitreous silica crucible used to pull up silicon single crystal includes: a cylindrical straight body portion, a corner portion formed at a lower end of the straight body portion, and a bottom portion connected with the straight body portion via the corner portion, wherein the vitreous silica crucible further comprises: an opaque outer layer enclosing bubbles therein; and a transparent inner layer from which bubbles are removed, wherein the residual distortion's distribution obtained by measuring the silica glass's inner surface in a non-destructed state has an optical path difference which is 130 nm or less, which residual distortion's distribution is measured using a distortion-measuring apparatus which converts a linearly polarized light into circularly polarized light and then irradiates the crucible's wall.

Vitreous silica crucible and evaluation method of the same

A destructive inspection method of a vitreous silica crucible for pulling a silicon single crystal evaluates a crack state of an inner surface of the vitreous silica crucible supported by a graphite susceptor when a load is instantaneously applied to at least one point on the inner surface via an automatic center punch while pushing the tip portion of the automatic center punch against the inner surface. The destructive inspection method can inspect the vitreous silica crucible under conditions as close to the actual conditions of use as possible.

Destructive inspection method and quality determination method for vitreous silica crucible

A vitreous silica crucible includes: a substantially cylindrical straight body portion having an opening on a top end and extending in a vertical direction; a curved bottom portion; and a corner portion connecting the straight body portion with the bottom portion and a curvature of which is greater than that of the bottom portion, wherein an inner surface of the crucible has a concavo-convex structure in which groove-shaped valleys are interposed between ridges, and an average interval of the ridges is 5-100 &#x3bc;m.

Vitreous silica crucible

A method for pulling silicon single crystal includes a process of placing a molded body between a susceptor's inner surface and a crucible's outer surface. The molded body is formed based on three-dimensional data of the inner surface shape of the susceptor which can hold the vitreous silica crucible and three-dimensional data of the crucible so as to make the susceptor's central axis and the crucible's central axis substantially aligned when it is placed between the susceptor's inner surface and the crucible's outer surface.

Method for pulling silicon single crystal

In an embodiment, a vitreous silica crucibleincludes a cylindrical straight body portion, a corner portionformed at lower end of the straight body portion, and a bottom portionconnected with the straight body portionvia the corner portion. Moreover, the vitreous silica crucibleincludes a bubble-containing opaque layerconstituting an outer layer, and a bubble-free transparent layerconstituting an inner layer. A boundary surface, between the opaque layerand the transparent layerin at least the straight body portion, forms a periodic wave surface in a vertical direction. The vitreous silica crucible can suppress deformation under high temperature.

Vitreous silica crucible and method for manufacturing the same

In an embodiment, a distortion-measuring apparatus for measuring a distortion distribution of an entire vitreous silica crucible in a non-destructive way includes: a light source; a first polarizerand a first quarter-wave platedisposed between the light sourceand an outer surface of a vitreous silica crucible wall; a cameradisposed inside of a vitreous silica crucible; a camera control mechanismconfigured to control a photographing direction of the camera; a second polarizerand a second quarter-wave platedisposed between the cameraand an inner surface of the vitreous silica crucible wall. An optical axis of the second quarter-wave plateinclines 90 degrees with respect to the first quarter-wave plate

Vitreous silica crucible and distortion-measuring apparatus for the same

The present invention provides a method for evaluating a vitreous silica crucible which can measure a three-dimensional shape of the inner surface of the crucible in a non-destructive manner. According to the present invention, A method for evaluating a vitreous silica crucible, including the steps of: moving an internal ranging section along an inner surface of the vitreous silica crucible in a contactless manner; measuring a distance between the internal ranging section and the inner surface as a distance from the inner surface, by subjecting the inner surface of the crucible to irradiation with laser light and then detecting a reflected light from the inner surface, the laser light being emitted from the internal ranging section in an oblique direction with respect to the inner surface, and the measurement being conducted at a plurality of measuring points along a course of a movement of the internal ranging section; and obtaining a three-dimensional shape of the inner surface of the crucible, by associating three-dimensional coordinates of each of the measuring points with the distance from the inner surface, is provided.

Method for evaluating silica glass crucible, method for producing silicon single crystals

A method for measuring a three-dimensional shape of an inner surface of a vitreous silica crucible which enables the measurement of the three-dimensional shape of the inner surface of the crucible without contaminating the inner surface of the crucible, is provided. According to the present invention, a method for measuring a three-dimensional shape of a vitreous silica crucible, including a fogging step to form a fog onto an inner surface of the vitreous silica crucible, a three-dimensional shape measuring step to measure a three-dimensional shape of the inner surface, by measuring a reflected light from the inner surface irradiated with light, is provided.

Method for measuring three-dimensional shape of silica glass crucible, and method for producing monocrystalline silicon

Buckling of a vitreous silica crucibleor inward fall of a sidewallis effectively suppressed. The vitreous silica crucibleincludes the cylindrical sidewallhaving an upward-opening rim, a mortar-shaped bottomincluding a curve, and a round portionconnecting the sidewalland the bottom. In the vitreous silica cruciblethe per-unit area thermal resistance in the thickness direction of the sidewallis higher than that of the round portion

The present invention provides a vitreous silica crucible which inhibits a deformation even when used under a high temperature condition for a long time, and a method for manufacturing the same. The vitreous silica crucible comprises: a substantially cylindrical straight body portion having an opening on the top end and extending in a vertical direction, a curved bottom portion, and a corner portion connecting the straight body portion with the bottom portion and a curvature of which is greater than that of the bottom portion, wherein, the vitreous silica crucible comprises a transparent layer on the inside and a bubble layer on the outside thereof, a compressive stress layer in which compressive stress remains in the inner surface side of the transparent layer, and a tensile stress layer in which tensile stress remains and is adjacent to the compressive stress layer at a gradual rate of change of stress.

Vitreous silica crucible for pulling of silicon single crystal and method for manufacturing the same

A quality-evaluated vitreous silica crucible for pulling silicon single crystal is provided, wherein an inner surface of the vitreous silica crucible has regions where surface defects including brown rings are to be generated when pulling silicon single crystal. The regions are distinguished using an infrared absorption spectrum or a Raman shift of the regions, wherein a position of each region and/or a density of the regions are/is specified.

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Akita, Japan

Ken Kitahara