Mitsubishi Electric Corporation

Ken Imamura

Kazunori Inoue

Kazushi Yamayoshi

Eiji Yagyu

Kunihiko Nishimura

Shuichi Hiza

Yuki Takiguchi

Masahiro Fujikawa

Shinya Nishimura

A split in a dicing street in a semiconductor film is prevented. A semiconductor device includes: a first dicing street passing between a plurality of element regions on which a plurality of protective films are formed one-to-one, the first dicing street extending along a first axis; a second dicing street passing between the plurality of element regions and extending along a second axis; and a stop island disposed on the upper surface of the semiconductor film at an intersection between the first dicing street and the second dicing street, the stop island being in non-contact with the plurality of element regions. X_si>X_ds and Y_si<Y_ds are satisfied.

Semiconductor device including stop islands and method for manufacturing semiconductor device

A thin film transistor (TFT) located on a thin film transistor substrate includes a first insulating film formed so as to cover a gate electrode, a channel layer that is formed at a position on the first insulating film overlapping the gate electrode and formed of an oxide semiconductor, a second insulating film formed on the channel layer, and a third insulating film formed so as to cover the second insulating film. A source electrode and a drain electrode are formed on the third insulating film. Each of the source electrode and the drain electrode is connected to the channel layer through the corresponding one of contact holes penetrating the second insulating film and the third insulating film.

Thin film transistor substrate including thin film transistor formed of oxide semiconductor and method for manufacturing the same

Growing community of inventors

Kumamoto, Japan

Ken Imamura