Sumitomo Electric Industries, Limited

Ken-ichiro Matsuzaki

Kenji Otobe

Tatsuya Hashinaga

Gaku Ishii

Nobuo Shiga

Shigeru Nakajima

Nobuhiro Kuwata

Ken-ichi Yoshida

A power amplifying module has a package formed by welding a package bottom plate being a package substrate of a generally flat plate shape with a cap being a metal package cap of a generally rectangular box shape. A wiring substrate of a generally flat plate shape is placed on the package bottom plate and this wiring substrate is covered by the cap. There are two through holes formed in the wiring substrate and two heat spreaders of a generally flat plate shape are positioned in portions exposed through the through holes on the package bottom plate. Semiconductor devices sealed with a resin or the like are set by soldering or the like on respective surfaces of these heat spreaders.

Power amplifying module

In an electronic component, an electronic circuit board having an electronic element mounted on the major surface is mounted on a metal frame. The electronic circuit board is covered with a metal lid fitted on the metal frame and contained in a metal package constituted by the metal frame and the metal lid. At least at one notched portion is formed at least at one end of the electronic circuit board. A positioning projection formed on the metal frame engages with the notched portion. The mechanical precision and electrical characteristics are improved, so that an electronic component particularly excellent in high-frequency characteristics, which can be manufactured in simple manufacturing process, can be obtained.

Electronic component contained in a metal package

A power amplifying module has at least one heat spreader mounted on a package substrate and exposed through a through hole provided in a wiring substrate, and at least one semiconductor chip forming a power amplifying circuit is mounted in a bare chip state on a surface of the at least one heat spreader as electrically connected to an electronic circuit pattern on the wiring substrate. Each of the package substrate and at least one heat spreader is made of a material having a thermal conductivity larger than that of a material making the wiring substrate. The module thus formed can emit the heat generated by the power amplifying module to the outside at high efficiency, thus achieving the power amplifying module with high performance and high reliability.

This invention provides a high-speed FET with a sufficiently high output current, and an FET having a high mobility of channel electrons and a high electron saturation rate. For this purpose, in this invention, a buffer layer, a first channel layer, a first spacer layer, a second channel layer, a second spacer layer, a third channel layer, and a capping layer are sequentially epitaxially grown on a semi-insulating GaAs semiconductor substrate. Drain and source regions are formed, and a gate electrode is formed to Schottky-contact the capping layer. Drain and source electrodes are formed to ohmic-contact the drain and source regions. Extension of a surface depletion layer from the substrate surface to a deep portion is prevented by the third channel layer closest to the substrate surface. For this reason, a sufficient quantity of electrons for forming a current channel are assured by the second and first channel layers.

Growing community of inventors

Yokohama, Japan

Ken-ichiro Matsuzaki