Tosoh Corporation

Sagami Chemical Research Institute

Sagami Chemical Research Center

Ken-ichi Tada

Noriaki Oshima

Taishi Furukawa

Tetsu Yamakawa

Koichiro Inaba

Kohei Iwanaga

Hirokazu Chiba

Toshiki Yamamoto

Tomoyuki Kinoshita

Hiroyuki Oike

Atsushi Maniwa

Tadahiro Yotsuya

Teppei Hayakawa

Yuki Yamamoto

Sachio Asano

Kazuyoshi Arai

Yasushi Hara

Daiji Hara

Kenichi Sekimoto

Yoshinori Harada

Mayumi Takamori

Takahiro Kawabata

Ryoji Tanaka

Satori Hirai

Naoyuki Koiso

To provide a cobalt complex which is liquid at room temperature, useful for producing a cobalt-containing thin film under conditions without using an oxidizing gas. A cobalt complex represented by the following formula (1): wherein Land Lrepresent a unidentate amide ligand of the following formula (A), a bidentate amide ligand of the following formula (B) or a hetero atom-containing ligand of the following formula (C): wherein Rand Rrepresent a Calkyl group or a tri(Calkyl)silyl group, and the wave line represents a binding site to the cobalt atom; wherein Rrepresents a tri(Calkyl)silyl group, Rand Rrepresent a Calkyl group, and X represents a Calkylene group; wherein Rand Rrepresent a Calkyl group, Rrepresents a hydrogen atom or a Calkyl group, Y represents an oxygen atom or NR, Z represents an oxygen atom or NR, and Rand Rindependently represent a Calkyl group.

Cobalt complex, method for manufacturing same, and method for manufacturing cobalt-containing thin film

Provided is a cobalt complex which is useful for the production of a cobalt-containing thin film under conditions where no oxidizing gas is used. A cobalt complex represented by general formula (1) (wherein Rrepresents a silyloxy group represented by general formula (2) (wherein R, Rand Rindependently represent an alkyl group having 1 to 6 carbon atoms); Rrepresents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or a silyloxy group represented by general formula (2); R, Rand Rindependently represent a hydrogen atom or an alkyl group having 1 to 6 carbon atoms; and L represents a diene having 4 to 10 carbon atoms) is used.

Substituted cyclopentadienyl cobalt complex and method for production thereof, and cobalt-containing thin film and method for production thereof

A compound useful for the manufacture of a Group 5 metal oxide film is provided. The compound is a Group 5 metal oxo-alkoxo complex represented by the following formula (A), and after preparing a film-forming material solution containing the compound and an organic solvent, a Group 5 metal oxide film can be manufactured using the film-forming material solution:M(&#x3bc;-O)(&#x3bc;-O)(&#x3bc;-O)(&#x3bc;-OR)(OR)(ROH)XY&#x2003;&#x2003;(A)(wherein M represents a niobium atom, etc.; Rrepresents an alkyl group; X represents an alkylenedioxy group; Y represents a carboxy group, etc.; &#x3b1; represents an integer of 3 to 10; &#x3b2; represents 0 or 1; &#x3b3; represents an integer of 0 to 8; &#x3b4; represents an integer of 2 to 9; &#x2208; represents an integer of 0 to 6; &#x3b6; represents an integer of 6 to 16; &#x3b7; represents an integer of 0 to 4; &#x3b8; represents an integer of 0 to 2; and &#x3b9; represents an integer of 0 to 6).

Group 5 metal oxo-alkoxo complex, method for producing same, and method for manufacturing group 5 metal oxide film

An object of the present invention is to provide a method for producing a Group IV metal oxide film useful as a semiconductor element or an optical element at a low temperature. The present invention relates to a method for producing a Group IV metal oxide film, comprising coating a surface of a substrate with a film-forming material dissolved in an organic solvent, and subjecting the substrate to a heat treatment, an ultraviolet irradiation treatment, or both of these treatments, wherein a film-forming material obtained by reacting a vinylenediamide complex having a specific structure with an oxidizing agent such as oxygen gas, air, ozone, water and hydrogen peroxide is used as the film-forming material.

Film-forming material, group IV metal oxide film and vinylenediamide complex

This invention aims at providing a material from which a silicon-containing thin film can be efficiently produced at a low temperature of 500&#xb0; C. or less without using plasma or the like. The invention relates to produce a hydrosilane derivative represented by the general formula (1') by reacting a chlorosilane derivative (3) with a compound MZ (4) and produce the silicon-containing thin film by using the hydrosilane derivative as the material.  In the formulae, R, Rare defined in the specification.

Hydrosilane derivative, method for producing same, and method for producing silicon-containing thin film

A subject for the invention is to provide novel titanium complexes which have a high vapor pressure and high thermal stability and serve as an excellent material for producing a titanium-containing thin film by a technique such as the CVD method or ALD method and to further provide processes for producing these complexes, titanium-containing thin films produced from the complexes, and a process for producing the thin films. The invention relates to producing a titanium complex represented by general formula (1): (wherein Rand Reach independently represent an alkyl group having 1-16 carbon atoms; Rand Reach independently represent a hydrogen atom or an alkyl group having 1-3 carbon atoms; and Rrepresents an alkyl group which has 1-16 carbon atoms and may have been substituted with one or more fluorine atoms) and to producing a titanium-containing thin film using the complex.

Titanium complex, processes for producing the same, titanium-containing thin film, and process for producing the same

Objects of the present invention are to provide a novel niobium or tantalum complex having good vapor pressure and becoming a raw material for producing a niobium- or tantalum-containing thin film by a method such as CVD method, ALD method or the like, a method for producing the same, a metal-containing thin film using the same, and a method for producing the same. The present invention relates to producing an imide complex represented by the general formula (1) by, for example, the reaction between M(NR)X(L)(2) and an alkali metal alkoxide (3): (wherein Mrepresents niobium atom or tantalum atom, Rrepresents an alkyl group having from 1 to 12 carbon atoms, Rrepresents an alkyl group having from 2 to 13 carbon atoms, X represents halogen atom, r is 1 when L is 1,2-dimethoxyethane ligand, r is 2 when L is pyridine ligand, and Mrepresents an alkali metal), and producing a niobium- or tantalum-containing thin film by using the imide complex (1) as a raw material.

Imide complex, method for producing the same, metal-containing thin film and method for producing the same

A compound which has thermal stability and moderate vaporizability and is satisfactory as a material for the CVD or ALD method; a process for producing the compound; a thin film formed from the compound as a raw material; and a method of forming the thin film. A compound represented by the general formula (1) is produced by reacting a compound represented by the general formula (2) with a compound represented by the general formula (3). The compound produced is used as a raw material to form a metal-containing thin film. [Chemical formula 1] (1) [Chemical formula 2] (2) [Chemical formula 3] M(NRR)(3) (In the formulae, M represents a Group 4 element, aluminum, gallium, etc.; n is 2 or 3 according to cases; Rand Reach represents Calkyl, etc.; Rrepresents Calkyl, etc.; Rand Reach represents Calkyl, etc.; X represents hydrogen, lithium, or sodium; p is 1 or 2 according to cases; and q is 4 or 6 according to cases). 

Metal-containing compound, its production method, metal-containing thin film, and its formation method

Objects of the present invention are to provide a novel titanium complex that has good vaporization characteristics and an excellent thermal stability, and becomes a raw material for forming a titanium-containing thin film by methods such as CVD method or ALD method, its production method, a titanium-containing thin film formed using the same, and its formation method. In the invention, a titanium complex represented by the general formula (1) is produced by reacting a diimine represented by the general formula (2) and metallic lithium, and then reacting a tetrakisamide complex represented by the general formula (3). (In the formulae, Rand Rrepresent an alkyl group having from 1 to 6 carbon atoms. Rand Reach independently represents a hydrogen atom or an alkyl group having from 1 to 3 carbon atoms. Rand Reach independently represents an alkyl group having from 1 to 4 carbon atoms.).

Titanium complexes, their production methods, titanium-containing thin films, and their formation methods

A novel tantalum compound, a method for producing the novel tantalum compound, and a method for stably forming a tantalum-containing thin film which contains the desired element. The tantalum compound enables one to selectively form a tantalum-containing thin film free of halogen and the like, and various tantalum-containing thin films which contain the desired element.

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Kanagawa, Japan

Ken-ichi Tada