Macronix International Co., Ltd.

Macronix Internationalco., Ltd.

Ken-Hui Chen

Kuen-Long Chang

Chun-Hsiung Hung

Chin-Hung Chang

Nai-Ping Kuo

Su-Chueh Lo

Chia-Jung Chen

Shih-Chang Huang

Yu-Chen Wang

Shang-Chi Yang

Chia-Feng Cheng

Wen-Yi Hsieh

Chuan-Ying Yu

Chang-Ting Chen

Yu-Meng Chaung

Chun-Yi Lee

Ming-Chih Hsieh

Chih-Ting Hu

Ching-Chung Lin

Wu-Chin Peng

Han-Sung Chen

Chun Hsiung Hung

Chun-Yu Liao

Bo-Chang Wu

Chao-Hsin Lin

Hang-Ting Lue

Teng-Hao Yeh

Ray-Lin Wan

Yi-Fan Chang

I-Long Lee

Kuan-Ming Lu

Tzu-Hsuan Hsu

Chen-Chin Liu

Shin-Jang Shen

Kuen Long Chang

Chien-Hsin Liu

Yin-Shang Liu

Fu-Nian Liang

Lan-Ting Huang

Tien-Shin Ho

Chen-Chia Fan

Tzu-Ting Chiu

Min-Hsiung Meng

Chuan Ying Yu

Tzeng-Hei Shiau

Chen-Huan Chen

Su-Chuch Lo

Chao Hsin Lin

A memory device and an associated control method are provided. The memory device includes a non-volatile memory array and a memory control circuit. The non-volatile memory array includes M secured memory zones. The memory control circuit is electrically connected to the non-volatile memory array. The memory control circuit provides a set of mapping information and searches a request key in the set of mapping information. The set of mapping information represents correspondences between N access keys and the M secured memory zones. The memory control circuit acquires at least one of the M secured memory zones if the request key is one of the N access keys, and performs an access command to the at least one of the M secured memory zones. M and N are positive integers.

Memory device and associated control method

A memory device, such as a 3D AND flash memory, includes a memory cell block, a word line driver, and a plurality of bit line switches. The word line driver has a plurality of complementary transistor pairs for respectively generating a plurality of word line signals for a plurality of word lines. Substrates of a first transistor and a second transistor of each of the complementary transistor pairs respectively receive a first voltage and a second voltage. Each of the bit line switches includes a third transistor. A substrate of the third transistor receives a third voltage. The first voltage, the second voltage, and the third voltage are constant static voltages during a soft program operation and a soft program verify operation.

Memory device for increasing speed of soft-program operation

A memory device comprises an array of memory cells, a physically unclonable function PUF circuit in the memory device to generate a PUF code, a data path connecting a first circuit to a second circuit in the memory device coupled to the array of memory cells, and logic circuitry to encode data on the data path from the first circuit using the PUF code to produce encoded data, and to provide the encoded data to the second circuit.

PUF applications in memories

A three dimension memory device, such as an AND-type memory, includes a memory cell tile, multiple source line switches, multiple first bit line switches to fourth bit line switches. The memory cell tile is divided into a first and a second memory cell sub-tiles. The first bit line switches are respectively coupled to multiple first bit lines of a first part of the first memory cell sub-tile. The second bit line switches are respectively coupled to multiple second bit lines of a second part of the first memory cell sub-tile. The third bit line switches are respectively coupled to multiple third bit lines of a first part of the second memory cell sub-tile. The fourth bit line switches are respectively coupled to multiple fourth bit lines of a second part of the second memory cell sub-tile.

Three dimension memory device capable of improving sensing accuracy in high-speed data sensing operation

Systems, devices, methods, and circuits for managing content addressable memory (CAM) devices. In one aspect, a semiconductor device includes: a memory cell array configured to store data in memory cells, and a circuitry coupled to the memory cell array and configured to execute a search operation in the memory cell array according to a search instruction. The search instruction includes at least one of search data or an option code, and the option code specifies, for the search operation, at least one of a search length or a search depth.

Managing content addressable memory devices

Systems, devices, methods, and circuits for managing secure writes in semiconductor devices. In one aspect, a semiconductor device includes a memory array and logic circuitry coupled to the memory array. The logic circuitry is configured to execute a secure write operation in the memory array in response to receiving encrypted information. The encrypted information includes at least one of information of data to be written, an option code, or multiple addresses in the memory array, the option code specifying a way of writing the data on at least one of the multiple addresses in the memory array.

Managing secure writes in semiconductor devices

A memory device includes a command decoder that implements security logic to detect a command sequence to read a security region of a memory array with continuous encrypted data and to output/input specific contexts for the data. Output/input of specific contexts can be during a dummy cycle to achieve greater performance. A host interfacing can, for example, execute a single command to both get the encrypted data and specific contexts that were used to encrypt the data. Our technology can implement transferring data on the system bus in ciphertext and encrypted by a different Nonce or a different session key than used in a previous transfer operation. In this way, data will be represented with different ciphertext on the bus at different sessions; thereby defending against a replay attack.

High performance secure read in secure memory providing a continuous output of encrypted information and specific context

A memory chip comprises a first memory controller, a first data storage zone, a security unit and an address configuration unit. The first data storage zone is coupled to the first memory controller, and represented by a first physical address range. The security unit is coupled to the first memory controller. The address configuration unit is coupled to the first memory controller. The memory chip is configured to be coupled between a host controller and another memory chip. The another memory chip comprises a second data storage zone represented by a second physical address range. The address configuration unit records one or more relationships of a logical address range corresponding to the first physical address range and the second physical address range. The security unit is configured to encrypt and decrypt data in the first data storage zone and the second data storage zone.

Memory chip having security verification function and memory device

A memory device, including a secure command decoder implementing security logic configured to detect commands carrying an encrypted immediate data payload from a requesting host, authenticate the host as source of the command, decode the immediate data and perform a memory access command called for by a command portion of the decrypted immediate data upon the storage cells of the memory device using the non-command portion of the decrypted immediate data, as well as to encrypt any result from executing the command portion prior to returning the result to the requesting host, and an input/output interface for I/O data units supporting multiple hosts.

Memory device having security command decoder and security logic circuitry performing encryption/decryption commands from a requesting host

A system and method use a physical unclonable function in a PUF circuit on an integrated circuit to generate a security key, and stabilize the security key by storage in a set of nonvolatile memory cells. The stabilized security key is moved from the set of nonvolatile memory cells to a cache memory, and utilized as stored in the cache memory in a security protocol. Also, data transfer from the PUF circuit to the set of nonvolatile memory cells can be disabled after using the PUF circuit to produce the security key, at a safe time, such as after the security key has been moved from the set of nonvolatile memory cells to the cache memory.

Stable physically unclonable function

A multi-chip package, a controlling method of the multi-chip package and a security chip are provided. The multi-chip package includes a memory chip and a security chip. The security chip is coupled between the memory chip and a host. The security chip includes a processing circuit. The processing circuit is for enabling a security path to input an input-output signal into the processing circuit for executing a security procedure and accessing the memory chip, if a command is received by the processing circuit and the command includes a security requirement.

Multi-chip package, controlling method of multi-chip package and security chip

An integrated circuit device can comprise addressable memory, and a receiver. Data integrity logic can be coupled to the input data path and configured to receive a data stream having a reference address, and a plurality of data chunks with data integrity codes. Also, the data integrity logic can include a configuration store to store configuration data for the data integrity checking. Also, the integrated circuit can include logic to parse the data chunks and the data integrity codes from the data stream, and logic to compute computed data integrity codes of data chunks in the received data stream, and compare the computed data integrity codes with received data integrity codes to test for data errors in the received data stream. The data integrity logic includes logic responsive to the configuration data that control the data integrity logic. In one aspect, the data integrity data indicates a floating boundary data integrity mode or a fixed boundary data integrity mode.

Configurable data integrity mode, and memory device including same

A memory system has a plurality of memory devices coupled with a hub in discrete and shared port arrangements. A plurality of bus lines connect the plurality of memory devices to the hub, including a first subset of bus lines connected in a point-to-point configuration between the hub and a particular memory device, and a second subset of bus lines connected to all the memory devices in the plurality of memory devices including the particular memory device. Bus operation logic is configured to use the first subset of bus lines in a first operation accessing the particular memory device while simultaneously using the second subset of bus lines in a second operation accessing a different selected memory device of the plurality of memory devices.

I/O bus shared memory system

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Hsinchu, Taiwan

Ken-Hui Chen