Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Ken Henmi

Hiroshi Tanaka

Toshihiro Kuriyama

A first gate electrode and a second gate electrode are formed on a semiconductor substrate, and then a resist pattern is formed so as to selectively leave open a portion including an overlap between the first and second gate electrodes. Next, the overlap between the gate electrodes is removed through isotropic etching. Etching is carried out at this time by an amount within a range of 140% to 200% of the film thickness of the second gate electrode. Next, a normal inter-layer insulating film and light-shielding film are formed. It is possible to eliminate the overlap between the gate electrodes adjacent to an opening of the light-shielding film, suppress the height of the light-shielding film at that portion, reduce shading for the light condensed by a lens and thereby improve the light condensing efficiency of the lens.

Method of manufacturing solid image pickup apparatus

A charge coupled device of the present invention includes a charge transfer region layer and a gate insulation film that are formed in the stated order on a semiconductor substrate, first gate electrodes formed at predetermined spaces on the gate insulation film, and second gate electrodes arranged between the first gate electrodes with at least silicon oxide films being interposed there between. Each silicon oxide film has constricted portions where the silicon oxide film is in contact with the gate insulation film, and electric insulation films are formed on the constricted portions so as to form sidewalls. This configuration decreases the charge transfer efficiency and increases a dielectric breakdown voltage between gate electrodes. Thus, a charge coupled device having high performance and high dielectric strength is provided.

Charge coupled device producing method

A charge coupled device of the present invention includes a charge transfer region layer and a gate insulation film that are formed in the stated order on a semiconductor substrate, first gate electrodes formed at predetermined spaces on the gate insulation film, and second gate electrodes arranged between the first gate electrodes with at least silicon oxide films being interposed therebetween. Each silicon oxide film has constricted portions where the silicon oxide film is in contact with the gate insulation film, and electric insulation films are formed on the constricted portions so as to form sidewalls. This configuration increases the charge transfer efficiency and increases a dielectric breakdown voltage between gate electrodes. Thus a charge coupled device having high performance and high dielectric strength is provided.

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Takatsuki, Japan

Ken Henmi