Tamura Corporation

Tokyo University of Agriculture and Technology

Konami Digital Entertainment Co., Ltd.

National Institute of Information and Communications Technology, Incorporated

Ihi Corporation

Yokohama National University

Japan Fine Ceramics Center

National University Corporation Tokyo University of Agriculture and Technology

Ken Goto

Yoshinao Kumagai

Hisashi Murakami

Akinori Koukitu

Kohei Sasaki

Shin Tsuchiya

Katsunori Onuki

Toshikazu Munemasa

Masataka Higashiwaki

Takeshi Nakamura

Takeshi Hasegawa

Satoshi Kitaoka

Man Hoi Wong

Tetsushi Matsuda

Akihiko Ito

Masahiro Kotani

Daisaku Yokoe

As one embodiment, the present invention provides a method for growing a β-GaO-based single crystal film by using HYPE method. The method includes a step of exposing a GaO-based substrate to a gallium chloride-based gas and an oxygen-including gas, and growing a β-GaO-based single crystal film on a principal surface of the GaO-based substrate at a growth temperature of not lower than 900° C.

Method for growing beta-GaO-based single crystal film, and crystalline layered structure

A high-temperature-steam-oxidation-resistive coated reinforcement fiber applicable to a fiber reinforced composite, is provided with: a reinforcement fiber; a coating layer covering the reinforcement fiber and including a rare-earth silicate; an exfoliative layer intervening in an interface between the coating layer and the reinforcement fiber; and a supplemental coating layer covering the reinforcement fiber, the exfoliative layer and the coating layer.

Environment-resistive coated reinforcement fiber applicable to fiber-reinforced composite

[Problem] To provide a crystal laminate structure having a &#x3b2;-GaObased single crystal film in which a dopant is included throughout the crystal and the concentration of the dopant can be set across a broad range. [Solution] In one embodiment of the present invention, provided is a crystal laminate structurewhich includes: a GaObased substrate; and a &#x3b2;-GaObased single crystal filmformed by epitaxial crystal growth on a primary faceof the GaObased substrateand including Cl and a dopant doped in parallel with the crystal growth at a concentration of 1&#xd7;10to 5.0&#xd7;10atoms/cm.

Crystal laminate structure

A semiconductor substrate that is used as an underlying substrate for epitaxial crystal growth carried out by the HVPE method includes a &#x3b2;-GaO-based single crystal, and a principal plane that is a plane parallel to a [100] axis of the &#x3b2;-GaO-based single crystal. An epitaxial wafer includes the semiconductor substrate, and an epitaxial layer including a &#x3b2;-GaO-based single crystal and formed on the principal plane of the semiconductor substrate by epitaxial crystal growth using the HVPE method. A method for producing an epitaxial wafer includes by using the HVPE method, epitaxially growing an epitaxial layer including a &#x3b2;-GaO-based single crystal on a semiconductor substrate that includes a &#x3b2;-GaO-based single crystal and has a principal plane parallel to a [100] axis of the &#x3b2;-GaO-based single crystal.

Semiconductor substrate, and epitaxial wafer and method for producing same

A semiconductor element includes a high-resistivity substrate that includes a &#x3b2;-GaO-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a &#x3b2;-GaO-based single crystal, and a channel layer on the buffer layer, the channel layer including a &#x3b2;-GaO-based single crystal including a donor impurity. A crystalline laminate structure includes a high-resistivity substrate that includes a &#x3b2;-GaO-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a &#x3b2;-GaO-based single crystal, and a donor impurity-containing layer on the buffer layer, the donor impurity-containing layer including a &#x3b2;-GaO-based single crystal including a donor impurity.

Semiconductor element and crystalline laminate structure

A semiconductor substrate for being used as a base substrate for epitaxial crystal growth by HVPE method includes a &#x3b2;-GaO-based single crystal, and a principal surface that is a plane parallel to a [010] axis of the &#x3b2;-GaO-based single crystal. An epitaxial wafer includes the semiconductor substrate, and an epitaxial layer that includes a &#x3b2;-GaO-based single crystal and is formed on the principal surface of the semiconductor substrate by epitaxial crystal growth using the HVPE method. A method for manufacturing the epitaxial wafer includes forming the epitaxial layer by epitaxial crystal growth using the HVPE method on the semiconductor substrate.

Semiconductor substrate, epitaxial wafer, and method for manufacturing epitaxial wafer

A crystal laminate structure includes a GaO-based substrate, and a &#x3b2;-GaO-based single crystal film formed by epitaxial crystal growth on a principal surface of the GaO-based substrate. The &#x3b2;-GaO-based single crystal film includes Cl and a dopant doped in parallel with the crystal growth at a concentration of not less than 1&#xd7;10atoms/cmand not more than 5.0&#xd7;10atoms/cm.

A high withstand voltage Schottky barrier diode includes a first layer that includes a first GaO-based single crystal including a first Group IV element and Cl at a concentration of not more than 5&#xd7;10cmand that has an effective donor concentration of not less than 1&#xd7;10and not more than 6.0&#xd7;10cm, a second layer that includes a second GaO-based single crystal including a second Group IV element and that has a higher effective donor concentration than the first layer and is laminated on the first layer, an anode electrode formed on the first layer, and a cathode electrode formed on the second layer.

High voltage withstand Ga2O3-based single crystal schottky barrier diode

To provide a network game system for switching a server-client machine without deteriorating the excitement of a game. A network game system () causes each of a plurality of game machines () to operate as a client and at least one of the plurality of game machines () to also operate as a server, thereby providing a game to be played by the players of the plurality of game machines (). A game play evaluation value calculation unit () calculates a play evaluation value corresponding to each of the plurality of game machines () during a game. In the case where a predetermined switching determination time arrives during the game, a server switching unit () switches the game machine () operating as the server from the game machine () currently operating as the server to another game machine () of the plurality of game machines (), based on the evaluation value calculated by the play evaluation value calculation unit ().

Network game system, game machine, game machine control method, and information storage medium

Provided is a network game system for providing a game played by players of game machines by operating at least one of the game machines as a server, in which: the game machine to be operated as a server can be appropriately selected; a measuring unit () of each of the game machines () measures a time required to exchange predetermined data between the game machine () and another game machine () of the game machines (); and a server determining unit () determines at least one of the game machines () as the game machine () to be operated as the server according to the results of the measurement by the measuring units () of the game machines ().

To provide a network game system capable of switching a server-client machine, while avoiding deterioration in the excitement of a game. A network game system () causes each of a plurality of game machines () to operate as a client and at least one of the plurality of game machines () to operate as a server. In the where a switching determination time arrives, a switching determination unit () determines whether or not to switch the game machine () operating as a server from the game machine () currently operating as the server to another game machine () of the plurality of game machines (), based on the play evaluation value corresponding to each of at least one of the game machines (). In the case where it is determined not to switch the game machine () operating as the server from the game machine () currently operating as the server to another game machine, a switching determination inhibiting unit () inhibits a switching determination unit () from making a decision during a period before a given switching inhibited period elapses.

Growing community of inventors

Tokyo, Japan

Ken Goto