Washington State University

Other

Ii-vi Incorporated

Kelvin Lynn

Kelly Jones

Guido Ciampi

Leon Joseph Radziemski

Csaba Szeles

Drew Haven

Marc H Weber

Disclosed herein are material compositions that include a metal doped, alumina rich yttrium aluminum garnet (YAG:M). Also provided according to embodiments of the invention are scintillator compositions that include YMAlO, as a primary phosphor and wherein 0&#x2266;x&#x3c;0.03, 0.001&#x3c;y&#x3c;0.2 and 0&#x2266;z&#x3c;0.012, or 0&#x2266;x&#x3c;0.01, 0.001&#x3c;y&#x3c;0.1 and 0&#x2266;z&#x3c;0.0625 and M comprises elements selected from cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), Chromium (Cr) and lutetium (Lu). and can include a single or a mixture of a these elements.

Compositions of inorganic luminescent materials

Micromachined holes in stacks of silicon wafers can be used to define high aspect ratio charged particle storage volumes. Each wafer can define a section of a tubular trap, and electric fields in each wafer can be controlled independently so that charged particles can be stored and shuttled among the sections.

Positron storage micro-trap array

High rate radiation detectors are disclosed herein. The detectors include a detector material disposed inside the container, the detector material containing cadmium, tellurium, and zinc, a first dopant containing at least one of aluminum, chlorine, and indium, and a second dopant containing a rare earth metal. The first dopant has a concentration of about 500 to about 20,000 atomic parts per billion, and the second dopant has a concentration of about 200 to about 20,000 atomic parts per billion.

Semiconductive materials and associated uses thereof

Semiconductor materials suitable for being used in radiation detectors are disclosed. A particular example of the semiconductor materials includes tellurium, cadmium, and zinc. Tellurium is in molar excess of cadmium and zinc. The example also includes aluminum having a concentration of about 10 to about 20,000 atomic parts per billion and erbium having a concentration of at least 10,000 atomic parts per billion.

Compositions of doped, co-doped and tri-doped semiconductor materials

A radiation detector made from a compound, or alloy, comprising CdxZn1&#x2212;xTe (0=x=1), Pb in a concentration between 10 and 10,000 atomic parts per billion and at least one element selected from the group consisting of (i) Cl and (ii) elements in column III of the periodic table in a concentration between 10 and 10,000 atomic parts per billion. The radiation detector exhibits full electrical compensation, high-resistivity, full depletion under an applied electrical bias and excellent charge transport.

Radiation detector

A force activated electrical power generator is provided using piezoelectric elements of preferred lead-magnesium-niobate lead titanate (PMN-PT). The circuitry is in preferred versions completely passive generating all power needed. Some circuitry limits voltage across the elements and provides a return charge channel to prevent depolarization. Transformers can be used to increase the output voltage and efficiency. Rectifiers are shown to rectify the output to a single polarity. Filtering, regulation and other conditioning components are also shown. The output from the generator and circuitry can store the electrical charge, such as in a capacitor and/or battery.

Growing community of inventors

Pullman, WA, United States of America

Kelvin Lynn