Applied Materials, Inc.

Cisco Technology, Inc.

Massachusetts Institute of Technology

Intel Corporation

Kelvin Chan

Yihong Chen

Abhijit Basu Mallick

Srinivas Gandikota

Alexandros T Demos

Chih-Tsung Huang

Wei-Jen Huang

Philip Allan Kraus

Susmit Singha Roy

Kang Sub Yim

Keerthi Manjunathan Swarnamanjunathan

M Arif Zeeshan

Mark Joseph Saly

Ziqing Duan

Lakmal Charidu Kalutarage

Bo Xie

Ganga Sudharshini Devadas

Li-Qun Xia

Juan Carlos Rocha-Alvarez

Pramit Manna

Karthik Janakiraman

Thomas E Nowak

Sony Varghese

William John Durand

David P Thompson

Thomas James Edsall

Rui Cheng

Bhaskar Jyoti Bhuyan

Thomas Knisley

Eswaranand Venkatasubramanian

Regina Germanie Freed

Mei-Yee Shek

Nagarajan Rajagopalan

Kenric T Choi

Yaoling Pan

Atashi Basu

Yong Wu

Amir Bayati

David Michael Thompson

Madhur Sachan

Dennis Khoa Dang Nguyen

Shaunak Mukherjee

Laura J Sharpless

Chia Cheng Chin

Sanjeev Baluja

Joseph Yudovsky

John J Hautala

Anantha K Subramani

Kallol Bera

Visweswaren Sivaramakrishnan

Jeffrey W Anthis

Hanhong Chen

Xinliang Lu

Mandyam Sriram

Karen K Gleason

Kevin Griffin

Jared Ahmad Lee

Tristan Yonghui Ma

Benjamin Schmiege

Scott A Hendrickson

Sanjay G Kamath

Abhijit Ashok Kangude

Travis Koh

Daping Yao

Dustin Wenpin Ho

Weifeng Ye

Farzad Houshmand

Daemian Raj

Khaled A Elsheref

Xiaopu Li

Yue J Yang

Simon Huang

Vu Ngoc Tran Nguyen

Sang In Yi

Mehul B Naik

Shashank Sharma

Xianmin Tang

Deenesh Padhi

He Ren

Thai Cheng Chua

Yu Lei

Michael D Willwerth

Mukund Srinivasan

Adolph Miller Allen

Yi Zheng

Joung Joo Lee

Bencherki Mebarki

Yi Xu

Diwakar N Kedlaya

Zubin Huang

Leonard Michael Tedeschi

Ashish Goel

Krishna Nittala

Patrick John Tae

Chuang-Chia Lin

Sang H Ahn

Vijaykumar Krithivasan

Alexander Jansen

Michelle SanPedro

Yang Guo

Embodiments disclosed herein include a module, comprising: a substrate, wherein the substrate comprises a dielectric material, and a microstrip resonator on the substrate. In an embodiment, a microstrip transmission line is on the substrate adjacent to the microstrip resonator, and the microstrip resonator is spaced from the microstrip transmission line by a gap. In an embodiment, a ground plane on a surface of the substrate is opposite from the microstrip resonator.

Printed microwave resonator for measuring high electron density plasmas

Embodiments herein include void-free material depositions on a substrate (e.g., in a void-free trench-filled (VFTF) component). In some embodiments, a method may include providing a plurality of device structures extending from a base, each of the plurality of device structures including a first sidewall opposite a second sidewall and a top surface extending between the first and second sidewalls, and providing a seed layer over the plurality of device structures. The method may further include forming a dielectric layer along just the top surface and along an upper portion of the first and second sidewalls using an angled deposition delivered to the plurality of device structures at a non-zero angle of inclination relative to a perpendicular extending from an upper surface of the base, and forming a fill material within one or more trenches defined by the plurality of device structures.

Techniques and device structures based upon directional dielectric deposition and bottom-up fill

Embodiments disclosed herein include semiconductor processing tools. In an embodiment, the semiconductor processing tool comprises a plasma source, and a chamber coupled to the plasma source. In an embodiment, a pump is coupled to the chamber. In an embodiment, the semiconductor processing tool further comprises a sampling line. In an embodiment, the sampling line comprises a reaction chamber, and an absorption chamber.

Reaction cell for species sensing

Processing methods comprise forming a gap fill layer comprising tungsten or molybdenum by exposing a substrate surface having at least one feature thereon sequentially to a metal precursor and a reducing agent comprising hydrogen to form the gap fill layer in the feature, wherein there is not a nucleation layer between the substrate surface and the gap fill layer.

Nucleation-free gap fill ALD process

Methods and apparatus for processing a substrate are provided herein. For example, a gas supply configured for use with a processing chamber includes an ampoule that stores a precursor and comprises an input to receive a carrier gas and an output to provide a mixture of the carrier gas and the precursor to the processing chamber and a sensor assembly comprising a detector and an infrared source operably connected to an outside of an enclosure, through which the mixture flows, and a gas measurement volume disposed within the enclosure and along an inner wall thereof so that a concentration of the precursor in the mixture can be measured by the detector and transmitted to a controller.

Methods and apparatus for processing a substrate

Methods for depositing film comprising cyclical exposure of a substrate surface to a precursor and a degas environment to remove gas evolved from the film. Some embodiments further comprise the incorporation poisoning the top of a feature to inhibit film growth at the top of the feature. Some embodiments further comprising etching a portion of the film deposited at the top of a feature between cycles to increase gap-fill uniformity.

Deposition of conformal and gap-fill amorphous silicon thin-films

Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method comprises forming a first metal oxo film on the substrate with a first vapor phase process including a first metal precursor vapor and a first oxidant vapor, and forming a second metal oxo film over the first metal oxo film with a second vapor phase process including a second metal precursor vapor and a second oxidant vapor.

Deposition of semiconductor integration films

Some embodiments include a method of depositing a photoresist onto a substrate in a processing chamber. In an embodiment, the method comprises flowing an oxidant into the processing chamber through a first path in a showerhead, and flowing an organometallic into the processing chamber through a second path in the showerhead. In an embodiment, the first path is isolated from the second path so that the oxidant and the organometallic do not mix within the showerhead. In an embodiment, the method further comprises that the oxidant and the organometallic react in the processing chamber to deposit the photoresist on the substrate.

Photoresist deposition using independent multichannel showerhead

Embodiments disclosed herein include gas concentration sensors, and methods of using such gas concentration sensors. In an embodiment, a gas concentration sensor comprises a first electrode. In an embodiment the first electrode comprises first fingers. In an embodiment, the gas concentration sensor further comprises a second electrode. In an embodiment, the second electrode comprises second fingers that are interdigitated with the first fingers.

Capacitive sensor for monitoring gas concentration

Techniques for identifying network congestion and adapting network performance to relieve the network congestion are described. As described, a network element such as a switch reports network congestion indicators such as link level control frames to a network controller. The network controller uses the network congestion indicators reported from the network elements to identify congestion points, data traffic, and data flows experiencing congestion at a network level. The network controller then determines optimized control parameters for the network in order to reduce or alleviate the congestion at the congestion points.

Congestion notification reporting for a responsive network

Embodiments herein include void-free material depositions on a substrate (e.g., in a void-free trench-filled (VFTF) component) obtained using directional etching to remove predetermined portions of a seed layer covering the substrate. In several embodiments, directional etching followed by selective deposition can enable fill material (e.g., metal) patterning in tight spaces without any voids or seams. Void-free material depositions may be used in a variety of semiconductor devices, such as transistors, dual work function stacks, dynamic random-access memory (DRAM), non-volatile memory, and the like.

Techniques for void-free material depositions

Embodiments include a method of processing a substrate. In an embodiment, the method comprises flowing one or more source gasses into a processing chamber, and inducing a plasma from the source gases with a plasma source that is operated in a first mode. In an embodiment, the method may further comprise biasing the substrate with a DC power source that is operated in a second mode. In an embodiment, the method may further comprise depositing a film on the substrate.

Plasma enhanced CVD with periodic high voltage bias

Embodiments include a processing tool for processing substrates in a low processing pressure and a high processing pressure. In an embodiment, the processing tool comprises a chamber body and a pedestal in the chamber body. In an embodiment, the pedestal is displaceable, and the pedestal has a first surface and a second surface opposite the first surface. In an embodiment, the processing tool further comprises a first gas port for supplying gasses into the chamber body and a first exhaust positioned above the first surface of the pedestal. In an embodiment, the embodiment further comprises a second gas port for supplying gasses into the chamber body and a second exhaust positioned below the second surface of the pedestal.

Single process volume to perform high-pressure and low-pressure processes with features to reduce cross-contamination

Disclosed are systems, methods, and non-transitory computer-readable storage media for monitoring application health via correctable errors. The method includes identifying, by a network device, a network packet associated with an application and detecting an error associated with the network packet. In response to detecting the error, the network device increments a counter associated with the application, determines an application score based at least in part on the counter, and telemeters the application score to a controller. The controller can generate a graphical interface based at least in part on the application score and a timestamp associated with the application score, wherein the graphical interface depicts a trend in correctable errors experienced by the application over a network.

System and method to measure and score application health via correctable errors

Growing community of inventors

San Ramon, CA, United States of America

Kelvin Chan