United States of America As Represented by the Secretary of the Air Force

Kelson D Chabak

Michael R Snure

Gregg H Jessen

Nicholas R Glavin

Andrew J Green

Methods of forming a self-aligned gate (SAG) and self-aligned source (SAD) device for high Esemiconductors are presented. A dielectric layer is deposited on a high Esubstrate. The dielectric layer is etched to form a drift region. A refractory material is deposited on the substrate and dielectric layer. The refractory material is etched to form a gate length. Implant ionization is applied to form high-conductivity and high-critical field strength source with SAG and SAD features. The device is annealed to activate the contact regions. Alternately, a refractory material may be deposited on a high Esubstrate. The refractory material is etched to form a channel region. Implant ionization is applied to form high-conductivity and high Esource and drain contact regions with SAG and SAD features. The refractory material is selectively removed to form the gate length and drift regions. The device is annealed to activate the contact regions.

Self-aligned gate and drift design for high-critical field strength semiconductor power transistors with ion implantation

Systems, methods and apparatus incorporating Gallium Nitride heterostructure (Al,In)GaN-materials in flexible, strainable and wearable radio frequency devices. These devices include (Al,In)GaN-based high-electron mobility transistors (HEMTs), which enable amplification of microwave radio frequencies from approximately 300 MHz to approximately 300 GHz for flexible and conformal wireless transmission.

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Springboro, OH, United States of America

Kelson D Chabak