Intel Corporation

Kelly P Lofgreen

Chandra Mohan Jha

Krishna Vasanth Valavala

Joseph B Petrini

Patrick Nardi

Ravindranath Vithal Mahajan

Je-Young Chang

Edvin Cetegen

Sergio Antonio Chan Arguedas

Manish Dubey

Kuang C Liu

Weihua Tang

Kyle Jordan Arrington

Feras Eid

Chia-Pin Chiu

David Wolk Mendel

Peng T Li

Michael T Crocker

Carl L Deppisch

James D Williams

Deepak Goyal

Michael L Rutigliano

Nicholas Neal

Rajen S Sidhu

Elah Bozorg-Grayeli

Aravindha Antoniswamy

Aastha Uppal

Todd R Coons

Ken P Hackenberg

Syadwad Jain

Raanan Sover

Christopher Wade Ackerman

Aaron McCann

Zhizhong Tang

Michael Aaron Schroeder

Bradley H Smith

Wei Hu

Bamidele Daniel Falola

Shenavia S Howell

Yongmei Liu

Javed Shaikh

Alexey Chinkov

Yang Jiao

Paul C George

Betsegaw Kebede Gebrehiwot

Chandra-Mohan Jha

Nir Peled

Jason Armstrong

Meir Cohen

A two-phase immersion cooling system for an integrated circuit assembly may be formed utilizing boiling enhancement structures formed on or directly attached to heat dissipation devices within the integrated circuit assembly, formed on or directly attached to integrated circuit devices within the integrated circuit assembly, and/or conformally formed over support devices and at least a portion of an electronic board within the integrated circuit assembly. In still a further embodiment, the two-phase immersion cooling system may include a low boiling point liquid including at least two liquids that are substantially immiscible with one another.

Immersion cooling for integrated circuit devices

A thermal interface structure may be formed comprising a thermally conductive substrate having a first surface and an opposing second surface, a first liquid metal layer on the first surface of the thermally conductive substrate, and a second liquid metal layer on the second surface of the thermally conductive substrate. The thermal interface structure may be used in an integrated circuit assembly or package between at least one integrated circuit device and a heat dissipation device.

Thermal interface structures for integrated circuit packages

Embodiments may relate to a microelectronic package that includes a lid coupled with a package substrate such that a die is positioned between the lid and the package substrate. The lid may include a heating element that is to heat an area between the lid and the die. Other embodiments may be described or claimed.

Integrated heat spreader (IHS) with heating element

Embodiments include a microelectronic device package structure having a first die on the substrate. One or more additional dice are on the first die, and a thermal electric cooler (TEC) is on the first die adjacent at least one of the one or more additional dice. A dummy die is on the TEC, wherein the dummy die is thermally coupled to the first die.

Package architecture including thermoelectric cooler structures

An integrated circuit (IC) package comprising an IC die, the IC die having a first surface and an opposing second surface. The IC die comprises a semiconductor material. The first surface comprises an active layer. A thermoelectric cooler (TEC) comprising a thermoelectric material is embedded within the IC die between the first surface and the second surface and adjacent to the active layer. The TEC has an annular shape that is substantially parallel to the first and second surfaces of the IC die. The thermoelectric material is confined between an outer sidewall along an outer perimeter of the TEC and an inner sidewall along an inner perimeter of the TEC. The outer and inner sidewalls are substantially orthogonal to the first and second surfaces of the IC die.

Annular silicon-embedded thermoelectric cooling devices for localized on-die thermal management

An Integrated Circuit (IC) assembly, comprising an IC package coupled to a substrate, and a subassembly comprising a thermal interface layer. The thermal interface layer comprises a phase change material (PCM) over the IC package. At least one thermoelectric cooling (TEC) apparatus is thermally coupled to the thermal interface layer.

Thermoelectric coolers combined with phase-change material in integrated circuit packages

An IC package, comprising a first IC component comprising a first interconnect on a first surface thereof; a second IC component comprising a second interconnect on a second surface thereof. The second component is above the first component, and the second surface is opposite the first surface. A thermoelectric cooling (TEC) device is between the first surface and the second surface. The TEC device is electrically coupled to the first interconnect and to the second interconnect.

Bump integrated thermoelectric cooler

Embodiments include an electronic system and methods of forming an electronic system. In an embodiment, the electronic system may include a package substrate and a die coupled to the package substrate. In an embodiment, the electronic system may also include an integrated heat spreader (IHS) that is coupled to the package substrate. In an embodiment the electronic system may further comprise a thermal interface pad between the IHS and the die. In an embodiment the die is thermally coupled to the IHS by a liquid metal thermal interface material (TIM) that contacts the thermal interface pad.

Liquid metal TIM with STIM-like performance with no BSM and BGA compatible

A conformable heat sink interface for an integrated circuit package comprises a mounting plate having a first surface and a deformable membrane having a portion bonded to a second surface of the plate. A cavity is between the second surface of the plate and the deformable membrane. A flowable heat transfer medium is within the cavity. The flowable heat transfer medium has a thermal conductivity of not less than 30 W/m K. The deformable membrane is to conform to a three-dimensional shape of an IC package and the mounting plate has a second surface that is to be adjacent to a heat sink base.

Conformable heat sink interface with a high thermal conductivity

Embodiments herein relate to systems, apparatuses, processing, and techniques related to a first heat-conducting plate to be thermally coupled to a first heat source, a thermoelectric cooler (TEC) thermally coupled to the first plate, a second heat-conducting plate thermally coupled to the TEC and to be thermally coupled to a second heat source where the TEC is to at least partially thermally isolate the first plate from the second plate to reduce heat transfer from the first plate to the second plate.

Using a thermoelectric cooler to reduce heat transfer between heat-conducting plates

Devices and methods disclosed herein can include a conductive foam having pores disposed within the conductive foam. The conductive foam can be compressible between an uncompressed thickness and a compressed thickness. The compressed thickness can be ninety-five percent or less of the uncompressed thickness. In one example, a filler can be disposed in the pores of the conductive foam. The filler can include a first thermal conductivity. The first thermal conductivity can be greater than a thermal conductivity of air.

Foam composite

Described herein are microelectronics packages and methods for manufacturing the same. The microelectronics package may include a first die, a second die, and an integrated heat spreader. The integrated heat spreader may include a first surface. The first surface may define a first indentation located in between the first die and the second die.

Microelectronics package with an integrated heat spreader having indentations

Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods may include forming a thermal interface material comprising a thermally conductive serpentine foil located between a first and a second interface material. The serpentine foil may be in a parallel position or a rotated position, in embodiments.

Methods of forming serpentine thermal interface material and structures formed thereby

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Phoenix, AZ, United States of America

Kelly P Lofgreen