Asm IP Holding B.v.

Kelly Houben

Dieter Pierreux

Bert Jongbloed

Steven Van Aerde

Werner Knaepen

Steven R A Van Aerde

Maarten Stokhof

Wilco Verweij

Wilco A Verweij

Charles Dezelah

Lucian C Jdira

Rami Khazaka

Caleb Miskin

Theodorus Oosterlaken

Chris De Ridder

Peter Westrom

Cornelis Thaddeus Herbschleb

Omar Elleuch

Frederick Aryeetey

Anna Trovato

A method and a wafer processing furnace for forming an epitaxial stack on a plurality of substrates is provided. In a preferred embodiment, the method comprises providing plurality of substrates to a process chamber. A plurality of deposition cycles are executed, thereby forming the epitaxial stack on the plurality of substrates. The epitaxial comprises a plurality of epitaxial pairs, each pair comprising a first epitaxial layer and a second epitaxial layer. The deposition cycle comprises a first deposition pulse and a second deposition pulse. The first deposition pulse comprises a provision of a first reaction gas mixture to the process chamber, thereby forming the first epitaxial layer and the second deposition pulse comprises a provision of a second reaction gas mixture to the process chamber, thereby forming the second epitaxial layer.

Method and wafer processing furnace for forming an epitaxial stack of semiconductor epitaxial layers on a plurality of substrates

A method and a wafer processing furnace for forming an epitaxial stack on a plurality of substrates is provided. In a preferred embodiment, the method comprises providing the plurality of substrates to a process chamber. A plurality of deposition cycles is executed, thereby forming the epitaxial stack on the plurality of substrates. The epitaxial stack comprises a plurality of epitaxial pairs, wherein the epitaxial pairs each comprises a first epitaxial layer and a second epitaxial layer, the second epitaxial layer being different from the first epitaxial layer. Each deposition cycle comprises a first deposition pulse and a second deposition pulse. The first deposition pulse comprises a provision of a first reaction gas mixture to the process chamber, thereby forming the first epitaxial layer. The second deposition pulse comprises a provision of a second reaction gas mixture to the process chamber, thereby forming the second epitaxial layer. The first deposition pulse or the second deposition pulse further comprises a provision of a dopant precursor gas to the process chamber.

Method and wafer processing furnace for forming an epitaxial stack on a plurality of substrates

A method for forming layers with silicon is disclosed. The layers may be created by positioning a substrate within a processing chamber, heating the substrate to a first temperature between 300 and 500&#xb0; C. and introducing a first precursor into the processing chamber to deposit a first layer. The substrate may be heated to a second temperature between 400 and 600&#xb0; C.; and, a second precursor may be introduced into the processing chamber to deposit a second layer. The first and second precursor may comprise silicon atoms and the first precursor may have more silicon atoms per molecule than the second precursor.

Method for forming a layer provided with silicon

Method for providing a semiconductor device with silicon filled gaps

The invention relates to a substrate processing apparatus comprising a reaction chamber provided with a substrate rack for holding a plurality of substrates in the reaction chamber. The substrate rack may have a plurality of spaced apart substrate holding provisions configured to hold the plurality of substrates. The apparatus may have an illumination system constructed and arranged to irradiate radiation with a range from 100 to 500 nanometers onto a top surface of the substrates.

Substrate processing apparatus and method

Amorphous silicon-filled gaps may be formed having no or a low occurrence of voids in the amorphous silicon fill, while maintaining a smooth exposed silicon surface. A gap in a substrate may be filled with amorphous silicon by heating the substrate to a deposition temperature between 300 and 500&#xb0; C. and providing a feed gas that comprises a first silicon reactant to deposit an amorphous silicon film into the gap with an hydrogen concentration between 0.1 and 10 at. %. The deposited silicon film may subsequently be annealed. After the anneal, any voids may be reduced in size and this reduction in size may occur to such an extent that the voids may be eliminated.

Semiconductor device with amorphous silicon filled gaps and methods for forming

The invention relates to a method of forming a semiconductor device by patterning a substrate by providing an amorphous silicon layer on the substrate and forming a hard mask layer on the amorphous silicon layer. The amorphous silicon layer is provided with an anti-crystallization dopant to keep the layer amorphous at increased temperatures (relative to not providing the anti-crystallization dopant). The hard mask layer may comprise silicon and nitrogen.

Forming semiconductor device by providing an amorphous silicon core with a hard mask layer

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Lubbeek, Belgium

Kelly Houben