Apple Inc.

Luxvue Technology Corporation

Other

Xicato, Inc.

Kelly C McGroddy

Andreas Bibl

Daniel Arthur Haeger

Jean-Jacques P Drolet

James Michael Perkins

Kapil Vinod Sakariya

David P Bour

Hsin-Hua Hu

Arpan Chakraborty

Dmitry S Sizov

Clayton Ka Tsun Chan

Ion Bita

Jonathan S Steckel

James E Pedder

Sajjad Ali Khan

Elmar Gehlen

Roland Van Gelder

Gerard Harbers

Christopher R Reed

A light emitting assembly is described. In one embodiment, one or more light emitting diode (LED) devices and one or more microcontrollers are bonded to a same side of a substrate, with the one or more microcontrollers to switch and drive the one or more LED devices.

Smart pixel lighting and display microcontroller

Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.

LED with internally confined current injection area

Display panels and methods of manufacture are described for down converting a peak emission wavelength of a pump LED within a subpixel with a quantum dot layer. In some embodiments, pump LEDs with a peak emission wavelength below 500 nm, such as between 340 nm and 420 nm are used. QD layers in accordance with embodiments can be integrated into a variety of display panel structures including a wavelength conversion cover arrangement, QD patch arrangement, or QD layers patterned on the display substrate.

Light emitting structure to aid LED light extraction

LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.

LED structures for reduced non-radiative sidewall recombination

Quantum dot integration schemes

A display and method of manufacture are described. The display may include a substrate including an array of pixels with each pixel including multiple subpixels, and each subpixel within a pixel is designed for a different color emission spectrum. An array of micro LED device pairs are mounted within each subpixel to provide redundancy. An array of wavelength conversion layers comprising phosphor particles are formed over the array of micro LED device pairs for tunable color emission spectrum.

LED display with wavelength conversion layer

Growing community of inventors

San Francisco, CA, United States of America

Kelly C McGroddy