Electro Scientific Industries, Inc.

Fei Comapny

Kelly Bruland

Brian W Baird

Ho Wai Lo

Stephen Neal Swaringen

Clint R Vandergiessen

Mark Alan Unrath

Keith Grant

Steve Swaringen

Brady Nilsen

Frank G Evans

Yunlong Sun

David Martin Hemenway

Andrew B Wells

Robert Hainsey

Steve Stone

Andrew Edwin Hooper

Richard S Harris

Mark Kosmowski

Douglas Earl Holmgren

Yasu Osako

William J Jordens

David Barsic

Xiaoyuan Peng

Daragh Finn

Lynn Sheehan

Duane Eitzen

Jim Dumestre

Confocal chromatic sensor systems for determining position of a sample include a beam emitter that emits a multichromatic beam incident on a surface of a sample, and a beam detector that is separate from the beam emitter and which detects a portion of the multichromatic beam reflected by the surface. The beam emitter is configured such that light of different wavelengths within the multichromatic beam have different corresponding focal lengths. The systems can include a memory storing computer readable instructions that cause a processing unit to determine which wavelength(s) are most prevalent in the detected portion of the multichromatic beam, and then determine the distance between the surface and the beam emitter based on the wavelength(s). When the surface is a sample within a charged particle beam system, a focus of the charged particle beam system or a sample position may be adjusted based on the position of the sample.

Confocal chromatic sensor systems

The present invention discloses an electron microscope and FIB system for processing and imaging of a variety of materials using two separate laser beams of different characteristics. The first laser beam is used for large bulk material removal and deep trench etching of a workpiece. The second laser beam is used for finer precision work, such as micromachining of the workpiece, small spot processing, or the production of small heat affected zones. The first laser beam and the second laser beam can come from the same laser source or come from separate laser sources. Having one laser source has the additional benefits of making the system cheaper and being able to create separate external and internal station such that the debris generated from bulk material removal from the first laser beam will not interfere with vacuum or components inside the particle beam chamber.

Dual laser beam system used with an electron microscope and FIB

An integrated station for extracting specimens suitable for viewing by a transmission electron microscope from a patterned semiconductor wafer, including a wafer cassette holder; a wafer transfer device; a nanomachining device, including a scanning electron microscope and a focused ion beam, a vacuum load lock and an operator control device, and wherein the operator control device notes locations of created lamellae; a plucker device; a control computer, adapted to control the wafer transfer device and the plucker device, commanding the plucker device to remover lamellae at the locations noted by the operator control device; and a user monitor and data input device, communicatively coupled to the computer. The wafer transfer device can transfer wafers from the wafer cassette holder to the vacuum load lock; from the vacuum load lock to the plucker device and from the plucker device to the wafer cassette holder.

Integrated lamellae extraction station

Tailored laser pulse shapes are used for processing workpieces. Laser dicing of semiconductor device wafers on die-attach film (DAF), for example, may use different tailored laser pulse shapes for scribing device layers down to a semiconductor substrate, dicing the semiconductor substrate, cutting the underlying DAF, and/or post processing of the upper die edges to increase die break strength. Different mono-shape laser pulse trains may be used for respective recipe steps or passes of a laser beam over a scribe line. In another embodiment, scribing a semiconductor device wafer includes only a single pass of a laser beam along a scribe line using a mixed-shape laser pulse train that includes at least two laser pulses that are different than one another. In addition, or in other embodiments, one or more tailored pulse shapes may be selected and provided to the workpiece on-the-fly. The selection may be based on sensor feedback.

Methods and systems for laser processing a workpiece using a plurality of tailored laser pulse shapes

Processing workpieces such as semiconductor wafers or other materials with a laser includes selecting a target to process that corresponds to a target class associated with a predefined temporal pulse profile. The temporal pulse profile includes a first portion that defines a first time duration, and a second portion that defines a second time duration. A method includes generating a laser pulse based on laser system input parameters configured to shape the laser pulse according to the temporal pulse profile, detecting the generated laser pulse, comparing the generated laser pulse to the temporal pulse profile, and adjusting the laser system input parameters based on the comparison.

Methods and systems for dynamically generating tailored laser pulses

A method for detecting particulate contamination under a workpiece fixtured by a calibrated material handling system includes performing 3D measurements of a workpiece at multiple of positions to construct a 3D map of the workpiece, calibrating the 3D map by comparing a pre-computed calibration map to the 3D measurements, and detecting particulate contamination by processing the calibrated map.

Method for detecting particulate contamination under a workpiece

A laser-based workpiece processing system includes sensors connected to a sensor controller that converts sensor signals into focused spot motion commands for actuating a beam steering device, such as a two-axis steering mirror. The sensors may include a beam position sensor for correcting errors detected in the optical path, such as thermally-induced beam wandering in response to laser or acousto-optic modulator pointing stability, or optical mount dynamics.

On-the fly laser beam path dithering for enhancing throughput

Methods and systems selectively irradiate structures on or within a semiconductor substrate using multiple laser beams. The structures may be laser-severable conductive links, and the purpose of the irradiation may be to sever selected links.

Methods and systems for semiconductor structure processing using multiple laser beam spots

Processing a workpiece with a laser includes generating laser pulses at a first pulse repetition frequency. The first pulse repetition frequency provides reference timing for coordination of a beam positioning system and one or more cooperating beam position compensation elements to align beam delivery coordinates relative to the workpiece. The method also includes, at a second pulse repetition frequency that is lower than the first pulse repetition frequency, selectively amplifying a subset of the laser pulses. The selection of the laser pulses included in the subset is based on the first pulse repetition frequency and position data received from the beam positioning system. The method further includes adjusting the beam delivery coordinates using the one or more cooperating beam position compensation elements so as to direct the amplified laser pulses to selected targets on the workpiece.

Photonic clock stabilized laser comb processing

A predictive pulse triggering (PPT) method enables precise triggering of a laser beam in a link-processing system. The PPT method entails triggering the laser beam based on estimated relative motion parameters of the target and laser beam axis. The PPT method allows for a six-fold improvement in laser positioning accuracy over the conventional, entirely measurement-based method.

Use of predictive pulse triggering to improve accuracy in link processing

On-the-fly laser beam path error correction for specimen target location processing

A laser processing system includes a beam positioning system to align beam delivery coordinates relative to a workpiece. The beam positioning system generates position data corresponding to the alignment. The system also includes a pulsed laser source and a beamlet generation module to receive a laser pulse from the pulsed laser source. The beamlet generation module generates a beamlet array from the laser pulse. The beamlet array includes a plurality of beamlet pulses. The system further includes a beamlet modulator to selectively modulate the amplitude of each beamlet pulse in the beamlet array, and beamlet delivery optics to focus the modulated beamlet array onto one or more targets at locations on the workpiece corresponding to the position data.

Photonic milling using dynamic beam arrays

Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method simultaneously directs the first and second laser beams onto distinct first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate substantially in unison in a direction substantially parallel to the lengthwise direction of the row, so as to selectively irradiate structures in the row with one or more of the first and second laser beams simultaneously.

Semiconductor structure processing using multiple laser beam spots spaced on-axis delivered simultaneously

A system determines relative positions of a semiconductor substrate and a plurality of laser beam spots on or within the semiconductor substrate in a machine for selectively irradiating structures on or within the substrate using a plurality of laser beams. The system comprises a laser source, first and second laser beam propagation paths, first and second reflection sensors, and a processor. The laser source produces at least the first and second laser beams, which propagate toward the substrate along the first and second propagation paths, respectively, which have respective first and second axes that intersects the substrate at respective first and second spots. The reflection sensors are positioned to detect reflection of the spots, as the spots moves relative to the substrate, thereby generating reflection signals. The processor is configured to determine, based on the reflection signals, positions of the spots on or within the substrate.

Systems and methods for distinguishing reflections of multiple laser beams for calibration for semiconductor structure processing

Systems and methods automatically modify a laser-based system for processing target specimens such as semiconductor wafers. In one embodiment, the laser-based system detects a trigger associated with a processing model. The processing model corresponds to a set of wafers. In response to the trigger, the system automatically adjusts one or more system parameters based on the processing model. The system then uses the modified system parameters to selectively irradiate structures on or within at least one wafer in the set of wafers. In one embodiment, the trigger includes variations in a thermal state related to a motion stage. In response to the variations in the thermal state, the system operates the motion stage in a series of movements until a thermal equilibrium threshold is reached. The sequence of movements may, for example, simulate movements used to process a particular wafer.

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Portland, OR, United States of America

Kelly Bruland