Hitachi Chemical Company, Ltd.

Keizou Hirai

Masato Yoshida

Toranosuke Ashizawa

Naoyuki Koyama

Kouji Haga

Youiti Machii

Jun Matsuzawa

Yuuto Ootsuki

Atsushi Sugimoto

Kouji Namekawa-Ryo 210 Haga

The present invention discloses a CMP abrasive comprising cerium oxide particles, a dispersant, an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished and water, a method for polishing a substrate comprising polishing a film to be polished by moving a substrate on which the film to be polished is formed and a polishing platen while pressing the substrate against the polishing platen and a polishing cloth and supplying the CMP abrasive between the film to be polished and the polishing cloth, a method for manufacturing a semiconductor device comprising the steps of the above-mentioned polishing method, and an additive for a CMP abrasive comprising an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished, and water.

CMP abrasive, method for polishing substrate and method for manufacturing semiconductor device using the same, and additive for CMP abrasive

Abrasive compound for CMP, method for polishing substrate and method for manufacturing semiconductor device using the same, and additive for CMP abrasive compound

The present invention provides a method for producing cerium oxide comprising rapid heating of cerium salts to a calcining temperature to calcine them, a cerium oxide abrasive containing the cerium oxide produced by the method and pure water, an abrasive containing a slurry in which cerium oxide particles having an intensity ratio of an area of a primary peak appearing at 27 to 30&deg; to that of a secondary peak appearing at 32 to 35&deg; (primary peak/secondary peak) in a powder X-ray diffraction chart of 3.20 or more are dispersed in a medium, an abrasive containing a slurry in which cerium oxide particles whose bulk density is 6.5 g/cm or less are dispersed into a medium, an abrasive containing a slurry in which abrasive grains having pores are dispersed into a medium, a method for polishing a substrate comprising polishing a predetermined substrate using the abrasive; and a method for manufacturing a semiconductor comprising the step of polishing by the abrasive.

Method for producing cerium oxide, cerium oxide abrasive, method for polishing substrate using the same and method for manufacturing semiconductor device

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Hitachiota, Japan

Keizou Hirai