Ayabo Corporation

Japan Science and Technology Agency

Keio University

Ibaraki University

National Institute for Materials

Tohoku University

Keizo Tsukamoto

Atsushi Nakajima

Hiroki Akatsuka

Hironori Tsunoyama

Chuhang Zhang

Hiroyuki Gunji

Naoyuki Hirata

Masahide Tona

Toshihiro Ando

Mika Uno

Katsushi Fujii

Fuminori Misaizu

Kiichirou Koyasu

Nanoclusters are produced in a gas phase using a nanocluster manufacturing section including: a vacuum container; a sputtering source that has a target as a cathode, performs magnetron sputtering by pulse discharge, and generates plasma; a pulse power source that supplies pulsed power to the sputtering source; a first inert gas supply section that supplies a first inert gas to the sputtering source; a nanocluster growth cell that is contained in the vacuum container; and a second inert gas introduction section that introduces a second inert gas into the nanocluster growth cell. A multitude of supports are rolled in the gas phase and each of the supports is sprinkled with a multitude of nanoclusters to cause each support to support the multitude of nanoclusters.

Support body, manufacturing apparatus for support body, and manufacturing method for support body

The present invention relates to a nanocluster liquid dispersion where nanoclusters with a predetermined number of atoms are dispersed.

Nanocluster liquid dispersion, nanocluster film, nanocluster solid dispersion, method for producing nanocluster liquid dispersion, and device for producing nanocluster liquid dispersion

An object of the invention is to reduce sizes of an inert gas supply and exhaust devices used for a pulse sputtering device. Another object is to efficiently supply suitable quantity of the inert gas to a place where the inert gas is required in the pulse sputtering device. Therefore, a provided pulse sputtering device has a sputtering source that performs pulse discharge and generates plasma, a gas injection valve that injects and supplies an inert gas to the sputtering source and a controller that controls the sputtering source and the gas injection valve. The controller controls the sputtering source and the gas injection valve such that the gas injection valve injects the inert gas intermittently and such that a part of a period, in which the pulse discharge occurs in the sputtering source, overlaps with a part of a period, in which the gas injection valve injects and supplies the inert gas.

Pulsed sputtering apparatus and pulsed sputtering method

Improvement of control of size and structure of nanoclusters with a nanocluster production apparatus is intended. Increase of an obtained amount and a yield of nanoclusters having size and structure, at least one of which is selected, is intended. A nanocluster production apparatus has a vacuum chamber, a sputtering source that generates plasma by pulse discharge, a pulse power supply that supplies a pulsed power to the sputtering source, a first inert gas supply device that supplies a first inert gas to the sputtering source, a cluster growth cell stored in the vacuum chamber and a second inert gas introduction device that introduces a second inert gas into the cluster growth cell.

Nanocluster production device

Growing community of inventors

Anjo, Japan

Keizo Tsukamoto