Kabushiki Kaisha Toshiba

Keizo Shimamura

Haruo Okano

Hisashi Kaneko

Nobuo Hayasaka

Junichi Wada

Akihiro Kajita

Masahiko Hasunuma

Sachiyo Ito

Takayuki Fukasawa

Tatsuyoshi Aisaka

Junsei Tsutsumi

Kagetaka Amano

Kentaro Matsunaga

Tsuneji Kameda

Hiromichi Horie

Yoshiyasu Itoh

Norikazu Osada

Satoru Murase

Masato Yoshino

Shigeo Nakayama

Hisato Kamohara

Hachio Shiraki

Yoshiko Kohanawa

Yoshio Hanakata

Kohsoku Nagata

A fuel electrode for a solid oxide electrochemical cell includes: an electrode layer constituted of a mixed phase including an oxide having mixed conductivity and another oxide selected from the group including an aluminum-based oxide and a magnesium-based composite oxide, said another oxide having, supported on a surface part thereof, particles of at least one member selected from nickel, cobalt, and nickel-cobalt alloys.

Fuel electrodes for solid oxide electrochemical cell, processes for producing the same, and solid oxide electrochemical cells

A hydrogen electrode constituted of a mixed phase composed of an oxide sinter having particles of at least one member selected from Ni, Co, Fe, and Cu on a surface part thereof and coated wholly or partly with a film having mixed conductivity and a sinter having ionic conductivity is formed on a surface of an electrolyte having oxygen ion conductivity.

Solid oxide electrochemical cell and processes for producing the same

A method for the production of a semiconductor device having an electrode line formed in a semiconducting substrate is disclosed which comprises preparing a semiconducting substrate having trenches and/or contact holes formed preparatorily in a region destined to form the electrode line, forming a conductive film formed mainly of at least one member selected from among Cu, Ag, and Au on the surface of the semiconducting substrate, heat-treating the superposed Cu film while supplying at least an oxidizing gas thereto thereby flowing the Cu film and causing never melting to fill the trenches and/or contact holes, and removing by polishing the part of the conductive film which falls outside the region of the electrode line and completing the electrode lines consequently. During the heat treatment, a reducing gas is supplied in addition to the oxidizing gas to induce a local oxidation-reduction reaction and fluidify and/or flow the conductive film and consequently accomplish the embodiment of the conductive film in the trenches. The formation of the interconnection is also accomplished by forming a conductive film on the surface of a semiconducting substrate having trenches formed therein, exerting thereon uniaxial stress from above the semiconducting substrate, heat treating the formed conductive film thereby flowing the conductive film, to fill the trenches, and polishing the surface of the semiconducting substrate.

Method for production of semiconductor device

A method for the production of a semiconductor device having an electrode line formed in a semiconducting substrate is disclosed which comprises preparing a semiconducting substrate having trenches and/or contact holes formed preparatorily in a region destined to form the electrode line, forming a conductive film formed mainly of at least one member selected from among Cu, Ag, and Au on the surface of the semiconducting substrate, heat-treating the superposed Cu film while supplying at least an oxidizing gas thereto thereby flowing the Cu film to fill the trenches and/or contact holes, and removing by polishing the part of the conductive film which falls outside the region of the electrode line and completing the electrode lines consequently. During the heat treatment, a reducing gas is supplied in addition to the oxidizing gas to induce a local oxidation-reduction reaction and fluidify and/or flow the conductive film and consequently accomplish the embodiment of the conductive film in the trenches.

A dispersion strengthened copper alloy containing a copper matrix, and dispersion particles dispersed in the copper matrix within a range of 0.5 to 6 vol %. In this alloy, an average diameter of a matrix region where the dispersion particles are not present is 0.3 .mu.m or less, and the total amount of solid solution elements contained in the copper matrix is determined such that, when this amount of the solid solution elements is added to pure copper, the electric conductivity of the matrix is lowered by 5% IACS or less.

Dispersion strengthened copper alloy and a method of manufacturing the

A composite member is prepared which comprises a core which will have a compound superconducting layer when heat-treated, and a stock for forming a stabilizing member made of copper and surrounding the core. The composite member is heat-treated in an oxidizing atmosphere, thus forming a copper-oxide thin layer on the surface of the stock. Thereafter, the composite member is heat-treated in a non-oxidizing atmosphere or in an atmosphere having an oxygen partial pressure which is too low to allow the forming of copper oxide. As a result, a compound superconducting wire is made which comprises a member including a compound superconductor, a diffusion-preventing layer made of oxide and surrounding the member, and a stabilizing member made of copper and surrounding the layer.

Compound superconducting wire and method of manufacturing the same

This invention provides a metal-bonded tool in which iron-base alloy powder and abrasive grains are bonded to each other. The quantity of the carbon or graphite in the bond being between 2.5 wt % or more and 4.5 wt % or less of the bond, and the diameter of the precipitated carbon or graphite being 5 .mu.m or less in the bond.

Metal-bonded tool and method of manufacturing same

Growing community of inventors

Tokyo, Japan

Keizo Shimamura