Tokyo Electron Limited

Keizo Hosoda

Yusuke Muraki

Atsushi Sato

Yumiko Kawano

Hideaki Yamasaki

Mitsuhiro Tachibana

Harunori Ushikawa

Susumu Arima

Nobuaki Shigematsu

Satoshi Yonezawa

A tantalum oxide film is formed on a lower conductive film by vapor-deposition, and then is treated with active oxygen species. The treated film is annealed at a temperature lower than the crystallization temperature of tantalum oxide by 10 to 80&deg; C. in an inert atmosphere. Subsequently, an upper conductive film is formed on the annealed tantalum oxide film.

Method of manufacturing a capacitor having tantalum oxide film as an insulating film

Rapid thermal nitridation is carried out to form a nitride film on a lower electrode which is made of silicon, and a tantalum oxide dielectric film is further formed thereon. Then, wet oxidization is carried out to oxidize the lower electrode through the dielectric film and the nitride film, thus an oxide film is formed between the lower electrode and the nitride film. Further, silicon which is not bonded to nitrogen in the nitride film is oxidized, thus an oxide film whose effective thickness is equal to or greater than 2 nm. The oxidization also recrystallizes the dielectric film. Finally, an upper electrode is formed, and the capacitor is completed.

Capacitor for analog circuit, and manufacturing method thereof

A semiconductor device fabricating method includes a preparatory process that brings a first source gas containing tungsten atoms into contact with a workpiece and that does not bring a second source gas containing nitrogen atoms into contact with the workpiece, and a film forming process that forms a tungsten nitride film on the workpiece by using the first and the second source gases so as to fabricate a semiconductor device. The semiconductor device fabricating method is capable of preventing the tungsten nitride film from peeling off from a layer underlying the same when the tungsten nitride film is subjected to heat treatment.

Semiconductor device fabricating method and system for carrying out the same

In a silicon nitride film formation method, a substrate to be subjected to film formation is heated, and silicon tetrachloride and ammonia gases are supplied to the substrate heated to a predetermined temperature. The ratio of the partial pressure of the silicon tetrachloride gas to that of the ammonia gas is set to not less than 0.5.

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Ibaraki, Japan

Keizo Hosoda