Tokyo Electron Limited

Tokyo Electron Yamanashi Limited

Keizo Hirose

Kazuya Nagaseki

Akira Koshiishi

Kenji Sekiguchi

Kosuke Imafuku

Yukio Naito

Shosuke Endo

Kazuhiro Tahara

Nobuo Konishi

Masayuki Tomoyasu

Hiroshi Nishikawa

Yoshio Sakamoto

Mitsuaki Komino

Hiroto Takenaka

Makoto Aoki

Masahiro Ogasawara

Shigenori Kitahara

Nobutaka Mizutani

Kinya Ueno

Naoto Yoshitaka

Takanori Miyazaki

Ryo Nonaka

Satohiko Hoshino

Yoshio Fukasawa

Fitrianto

Shintaro Sugihara

Hiroshi Tsuchiya

Isao Kobayashi

Kenji Momose

Riki Tomoyoshi

Takao Sakamoto

Isao Tsukagoshi

Tomohide Inoue

A joining device for joining substrates together includes a first holding member configured to vacuum-suck a first substrate to draw and hold the first substrate on a lower surface thereof, and a second holding member disposed below the first holding member and configured to vacuum-suck a second substrate to draw and hold the second substrate on an upper surface thereof. The second holding member includes a body portion formed into a size larger than the second substrate when seen in a plan view and configured to vacuum-suck the second substrate, a plurality of pins provided on the body portion and configured to make contact with a rear surface of the second substrate, and an outer wall portion annularly provided on the body portion at an outer side of the plurality of pins and configured to support an outer periphery portion of the rear surface of the second substrate.

Joining device and joining system

In the plasma processing apparatus of the present invention, a first electrode for connecting a high frequency electric power source in a chamber is arranged to be opposed to a second electrode. A substrate (W) to be processed is placed between the electrodes. There is provided a harmonic absorbing member for being able to absorb harmonics of the high frequency electric power source so as to come in contact with a peripheral portion or circumference of a face of the first electrode, which is opposite the second electrode. The harmonic absorbing member absorbs the reflected harmonic before the harmonic returns to the high frequency electric power source. By absorbing the harmonic in this manner, the standing wave due to the harmonic will be effectively prevented from being generated, and the density of plasma is made even.

Plasma processing apparatus

In the plasma processing apparatus of the present invention, a first electrode () for connecting a high frequency electric power source () in a chamber is arranged to be opposed to a second electrode (). A substrate (W) to be processed is placed between the electrodes. There is provided a harmonic absorbing member () for being able to absorb harmonics of the high frequency electric power source () so as to come in contact with a peripheral portion or circumference of a face of the first electrode, which is opposite the second electrode (). The harmonic absorbing member absorbs the reflected harmonic before the harmonic returns to the high frequency electric power source. By absorbing the harmonic in this manner, the standing wave due to the harmonic will be effectively prevented from being generated, and the density of plasma is made even.

Apparatus for plasma processing

Substrate cleaning apparatus and method capable of preventing adhesion of particles to a substrate irrespective of being hydrophilic or hydrophobic are provided. Although a cleaning liquid ejected from a two-fluid nozzlerebounds from a cup CP and scatters in the form of mist toward the center side of a wafer W, a rinsing liquid is supplied from a rinse nozzleto form a water filmon the wafer W. Owing to the presence of the water film, the surface of the wafer W is protected from adhesion of particles contained in the mist. It is possible to prevent the particles in the mist from adhering to the wafer W and also possible to prevent a bad influence on the wafer W.

Substrate processing apparatus and substrate processing method

A porous low-k film, a sacrificial film that can be dissolved in a pure water, an antireflection film and a resist film are successively formed on a dielectric film on a wafer and subsequently exposing the resist film to light in a prescribed pattern and developing the resist film so as to form a prescribed circuit pattern in the resist film. Then, the wafer W is etched so as to form a via hole in the porous low-k film, followed by processing the wafer with a hydrogen peroxide solution so as to denature the resist film. Further, the sacrificial film is dissolved in a pure water so as to strip the resist film and the antireflection film from the water. As a result, a via hole excellent in the accuracy of the shape is formed without doing damage to the dielectric film.

Method of manufacturing trench structure for device

A substrate cleaning tool having little particle sticking to the tool and a substrate cleaning apparatus having the substrate cleaning tool are provided. The substrate cleaning toolhas a plurality of thready brush membersin a bundle. The brush membersare capable of passing cleaning liquid through and ejecting the cleaning liquid through respective surfaces of the members. In operation, the substrate cleaning toolis brought into contact with a substrate W in their relative movement in order to clean the substrate W. As the cleaning liquid is ejected from the surfaces of the brash members, particles are washed away from the surfaces of the brash members. Consequently, it is possible to eliminate a possibility that the particles etc. are transferred to the substrate W.

Substrate cleaning tool and substrate cleaning apparatus

In a cleaning apparatus for substrates, such as semiconductor wafers, a permeable core member made of a synthetic resin is supplied with distilled water from a distilled water supply path within a head portion of a cleaning tool . A planar portion is provided on the lower surface of the core member and a porous resin sheet is attached to the outer surface of the core member , to cover it. The cleaning tool is provided with an air bearing cylinder that imparts a vertical driving force to a rod that presses against the surface of a wafer W which is being rotated, and the distilled water supply path is provided within the rod . The distilled water supplied from the distilled water supply path permeates through the core member and the porous resin sheet and is sent out of the head so that a flowing film of distilled water is formed on the surface of the wafer W. Thus contamination and damage of the substrate is prevented and the shape of the head is not destroyed.

Substrate cleaning tool, having permeable cleaning head

An apparatus for treating a substrate which includes a chamber and an opening formed in the chamber allowing the substrate to be conveyed into the chamber or taken out thereof. The chamber, also, includes a detachable baffle plate that fits around an electrode. For treatment to commence, the substrate is placed on the electrode and the chamber is exhausted of or supplied with gases. The electrode is then vertically lifted together with the baffle plate and the baffle plate is moved either to a position that is higher in level than an upper end of the opening of the chamber or to a position that is lower in level than a lower end of the opening of the chamber. This allows the baffle plate to shield a region near the opening of the chamber from a treatment region and allows reaction products to be adhered to the baffle plate.

Plasma treatment method and apparatus

A process solution supplying mechanism for supplying a process solution to a wafer, comprises a source for containing the process solution, a pipe for introducing the process solution from the source to the wafer, a process solution supply driving system for supplying the process solution from the source to the wafer, and a process solution supplying/stopping mechanism for carrying out apply and stop of the process solution, wherein the pipe and the process solution supply driving system are provided separately and the process solution supplying/stopping mechanism is provided to a portion other than the pipe.

Process solution supplying apparatus

The substrate washing method of the present invention comprises the steps of holding the substrate substantially horizontally, supplying a cleaning liquid to a surface of the substrate through a film scrub member permeable to liquid and allowing the film scrub member in contact with the surface of the substrate, pressing the film scrub member onto the surface of the substrate in excess of a zero point, which is an initial contact point of the film scrub member with the surface of the substrate, thereby bringing the film scrub member into contact with the surface of the substrate in an overdriving manner and moving the film scrub member relative to the substrate to scrub the surface of the substrate by the film scrub member.

Substrate washing method

A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.

A scrubbing apparatus is provided which sufficiently cleans every site on the wafer by a cleaning accelerating action of ultrasonic waves, the scrubbing apparatus comprising a substrate support section for supporting a substrate horizontally and substantially in contact with a circumferential portion of the substrate while front side and back side surfaces of the substrate are substantially kept untouched in operation by the substrate, rotation drive means for driving the substrate support section to rotate in order to give a rotation force to the substrate, a brush for scrub-cleaning the substrate while contacting at least the front surface, a main nozzle provided with a first supply circuit for supplying a-cleaning liquid in at least a central region of the substrate, an auxiliary nozzle provided with a second supply circuit for supplying the cleaning liquid in at least a peripheral region of the substrate, and an ultrasonic oscillator for applying ultrasonic waves to the cleaning liquid supplied on the substrate from an auxiliary nozzle.

Scrubbing apparatus

A method of forming a resist film comprises (a) forming a resist film on a substrate, and (b) removing a surface region of the resist film formed in the step (a) so as to decrease the thickness of the resist film.

Method of forming resist film

A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f,lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f,higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the water.

The substrate washing apparatus of the present invention comprises a film scrub member permeable to liquid, which is moved relatively to a substrate held substantially horizontally while being in contact with the substrate, a supporting portion for supplying the film scrub member, a supply pipe for supplying a cleaning liquid to the substrate through the film scrub member, cleaning liquid supply means for supplying the cleaning liquid to the supply pipe, pressing means for pressing the film scrub member supplied with the cleaning liquid and swollen, to the substrate, and relative moving means for horizontally moving the film scrub member supplied with the cleaning liquid and swollen, relative to the substrate.

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Kofu, Japan

Keizo Hirose