Nec Corporation

Keizo Hagimoto

Manabu Yamada

Masami Sawada

Kazumi Yamaguchi

Yasuhiro Koseki

Toshinori Nishii

Tsutomu Sone

A semiconductor device having a field-effect transistor has a MOS capacitor formed on a principal surface of a semiconductor substrate of the semiconductor device, and connecting a first and a second electrodes of the MOS capacitor to a source electrode and a drain electrode, respectively, of the field-effect transistor.

Field effect transistor having capacitor between source and drain

A two-way conductive directional circuit formed in a polycrystalline silicon layer separated by an insulation film from a semiconductive element is one-way biased for sensing a temperature of the semiconductive element. The directional circuit may be provided with a bias in either conductive direction thereof for sensing a temperature of the semiconductive element, before being provided with a bias in the other conductive direction thereof for sensing the temperature of the semiconductive element.

Integrated semiconductor device with temperature sensing circuit and

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Tokyo, Japan

Keizo Hagimoto