Matsushita Electric Industrial Co., Ltd.

Keizaburo Kuramasu

Tetsuo Kawakita

Mikihiko Nishitani

Masashi Goto

Koji Nomura

Shigeo Ikuta

Masumi Izuchi

Hiroshi Tsutsu

Yoshinao Taketomi

Hiroshi Satani

Hikaru Nishitani

Shin-itsu Takehashi

Atsushi Sasaki

Mayumi Inoue

Yoshiko Mino

Tokumi Kotani

Tutomu Nakanishi

Ryoichi Takayama

Toshio Sugawa

Shoji Arai

Sumio Maekawa

Shigeo Ikuda

A driver circuit-integrated type active matrix substratehas, on a glass substrate, a liquid crystal display unitincluding a matrix array composed of thin film transistors, and driver circuitsfor driving the liquid crystal display unit. A peripheral portion of the glass substratehas recessed groovesformed therein, and power supply linesfor supplying power to the driver circuitsandare buried in the recessed grooves. Such a configuration reduces the resistance of bus wiring lines such as the power supply lines for the driver circuits and data lines, without increasing an area of the peripheral portion. The driver circuit-integrated type active matrix substrate reduces an amount of voltage drop in power supply voltage, ensuring reliable operation of the driver circuits.

Display device and method of producing same

The present invention provide an LDD type TFT having excellent properties, particularly for a liquid crystal display unit. For this purpose, a top gate type LDDTFT gate electrode is converted into a two-stage structure by use of a chemical reaction or plating, and furthermore, into a shape in which an upper portion or a lower portion slightly protrudes on the source electrode side, or the drain electrode side relative to the other portions. Impurities are injected by using this electrode having this structure and shape as a mask. Prior to injection of impurities, the gate insulating film is removed, and a Ti film is formed for preventing hydrogen for dilution from coming in. This is also the case with the LDD-TFT on the bottom gate side.

Thin-film transistor, panel, and methods for producing them

In a polycrystalline silicon thin film transistor, a semiconductor device having a high field effect mobility is achieved by increasing a grain size of a silicon thin film. First, an insulation layer having a two-layer structure is formed on a transparent insulated substrate . In the insulation layer, a lower insulation layer , which is in contact with the transparent insulating substrate , is made to have a higher thermal conductivity than an upper insulation layer . Thereafter, the upper insulation layer is patterned so that a plurality of stripes are formed thereon. Subsequently, an amorphous silicon thin film is formed on the patterned insulation layer, and the insulation layer is irradiated with a laser light scanning in a direction parallel to the stripe pattern on the upper insulation layer . Thus, the amorphous silicon thin film is formed into a polycrystalline silicon thin film

Semiconductor thin film, method and apparatus for producing the same, and semiconductor device and method of producing the same

A method of fabricating a thin-film transistor including forming a polycrystalline semiconductor thin film on a substrate by irradiating with a laser beam an amorphous semiconductor thin film formed on the substrate. Heat treating the polycrystalline semiconductor thin film while the substrate is held by a substrate holder provided in a container containing hydrogen, and processing, prior to or after the heat treating, the polycrystalline semiconductor thin film into a specified configuration.

Method of fabricating a thin-film transistor

Semiconductor thin film, method of producing the same, apparatus for producing the same, semiconductor device and method of producing the same

Method of fabricating a thin film transistor

In producing a thin film transistor used for such devices as a large-sized liquid crystal display panel with a high pixel density, a leftover of an insulating film caused by insufficient etching and a loss of a semiconductor layer caused by overetching are prevented, and a reliable electrical contact between the source and drain electrodes and the semiconductor layer is achieved. These are achieved by (a) forming a contact hole region of a silicon film so that the region has a larger thickness, for example, by making the film to have a plurality of layers, and (b) providing a silicide layer between an electrode metal and the semiconductor layer.

Thin film transistor and producing method thereof

A SAW device comprising an inter-digital electrode capable of withstanding application of excessive electric power, while preventing an increase of insertion loss. The SAW device has an inter-digital electrode formed by alternating layers of aluminum films and conductive films, where the conductive films have an elastic constant greater than that of the aluminum films.

Saw device and its manufacturing method

A pyroelectric infrared radiation detector for detecting the intensity of infrared radiation with a pyroelectric element is provided. The pyroelectric infrared radiation detector comprises a substrate made of a single crystal material such as (100) magnesium oxide and an infrared radiation detecting structure which comprises a first electrode disposed on the substrate, a pyroelectric thin film disposed on the first electrode, and a second electrode disposed on the pyroelectric thin film for absorption of infrared radiation. The substrate has a recess provided in the upper surface thereof where the infrared radiation detecting structure is seated. A method of producing the pyroelectric infrared radiation detector comprises a first step of forming a first electrode on one surface of a substrate, a second step of forming a pyroelectric thin film on the first electrode, a third step of forming a second electrode on the pyroelectric thin film, a fourth step of providing etching apertures in the first electrode which are open to the substrate, and a fifth step of providing by wet etching process at least one recess in the surface of the substrate where the first electrode is seated.

Method of producing a pyroelectric infrared radiation detector

A pyroelectric infrared radiation detector for detecting the intensity of infrared radiation with a pyroelectric element. The pyroelectric infrared radiation detector comprises a substrate made of a single crystal material and an infrared radiation detecting structure which comprises a first electrode disposed on the substrate, a pyroelectric thin film disposed on the first electrode, and a second electrode disposed on the pyroelectric thin film for absorption of infrared radiation. The substrate has a recess provided in the upper surface thereof where the infrared radiation detecting structure is seated. A method of producing the pyroelectric infrared radiation detector comprises a first step of forming a first electrode on one surface of a substrate, a second step of forming a pyroelectric thin film on the first electrode, a third step of forming a second electrode on the pyroelectric thin film, a fourth step of providing etching apertures in the first electrode which is open to the substrate, and a fifth step of providing by wet etching process a recess(es) in the surface of the substrate where the first electrode is seated.

Pyroelectric infrared radiation detector and method of producing the same

A thermal printing head having a substrate and a resistive element formed on the substrate wherein said resistive element is a thin layer which is composed of an electrically conducting material and an electrically insulating material. This thermal printing head has a high heat-resistivity, so that it may be used at a high temperature or for high speed printing.

Growing community of inventors

Kyotanabe, Japan

Keizaburo Kuramasu