Western Digital Technologies, Inc.

Applied Materials, Inc.

Western Digital Corporation

Censtor Corporation

Seagate Technology Incorporated

Read Rite Corporation

Wd Media, LLC

Keith R Berding

Blake Erickson

Zhaozhao Zhu

Philip Allan Kraus

Upendra V Ummethala

Michael C Kutney

Harold J Hamilton

John R Gustafson

Patrick John Tae

Devendra Channappa Holeyannavar

Michael A Baldwinson

Sivasankar Nagarajan

Shivaraj Manjunath Nara

Anandakumar Parameshwarappa

Dhirendra Kumar

Shawn E Casey

Thomas J Hitchner

Yao-Hsin Huang

Soumendra N Barman

Garrett A Garrettson

Christopher S Gudeman

Michael D Willwerth

Dimitre A Latev

Robert D Hempstead

Michelle SanPedro

Jeffrey Ludwig

Michael H Azarian

Brian P Schott

David Joseph Bagaoisan

David Ali

Kaynam Chun

Tsung Feng Wu

Valentin Ojeda

Vlad Joseph Novotny

Alexander P Payne

Mark A Lauer

Nils E Larson

Darren Todd Imai

Chunjer Chuck Cheng

Scott Edward Watson

William C Cain

Charles D Flanigan

Joseph M Viglione

Walter W Butler

Jonathan M Garbarino

Enoch Mylabathula

Randolph S Gluck

Robert Bradley Burkhart

Baekho Heo

Jon M Garbarino

Kenneth Frederick Young

David D Roberts

Timothy W Martin

Michael E Devillier

Michael G Choy

Norman K Watkins

Sudha Narayan

Shan-Shuong Chiou

Richard D Anderson

Suresh Polali Narayana Rao

Charles B Mountain

Kwang K Kim

Anthony A Jarrami

Shinichi M Tanaka

Pang Choun Cheong

Gabriel F Camara

James Demuth

An article, apparatus, and method for detecting an etch rate uniformity in a processing chamber of an electronics processing system is provided. A device is placed in a processing chamber of an electronics processing system. The device includes a first layer deposited on a surface of the device and a second layer deposited on the first layer. The first layer is composed of a first sense material and the second layer is composed of an etch material. During an etch process at the processing chamber, a first amount of time from an initiation of the etch process to a detection of a first indication of completion of etching of the second layer at a first portion of the surface of the device is measured. The etch process etches the second layer of the device based on an initial set of etch parameter settings. A first etch rate of the processing chamber is determined based on the measured first amount of time and a thickness of the second layer. An optimized set of etch parameter settings to be applied at the processing chamber during subsequent etch processes is determined based on the first etch rate of the processing chamber.

In-situ etch rate and etch rate uniformity detection system

Embodiments disclosed herein include a diagnostic substrate, comprising a baseplate, and a first plurality of image sensors on the baseplate, where the first plurality of image sensors are oriented horizontal to the baseplate. In an embodiment, the diagnostic substrate further comprises a second plurality of image sensors on the baseplate, where the second plurality of image sensors are oriented at a non-orthogonal angle to the baseplate. In an embodiment, the diagnostic substrate further comprises a printed circuit board (PCB) on the baseplate, and a controller on the baseplate, where the controller is communicatively coupled to the first plurality of image sensors and the second plurality of image sensors by the PCB. In an embodiment, the diagnostic substrate further comprises a diffuser lid over the baseplate, the PCB, and the controller.

Smart camera substrate

An apparatus includes a base component and a plurality of collimators housed within the base component. Each collimator of the plurality of collimators corresponds to a respective location of a plurality of locations of a wafer in an etch chamber. The plurality of locations includes a center location of the wafer, a plurality of inner ring locations along an inner ring of the wafer associated with a first set of radially symmetric optical emission spectroscopy (OES) signal sampling paths, and a plurality of outer ring locations along an outer ring of the wafer associated with a second set of radially symmetric OES signal sampling paths.

Spatial optical emission spectroscopy for etch uniformity

A system includes a memory, and at least one processing device, operatively coupled to the memory, to facilitate an etch recipe development process by performing operations including obtaining, from an optical detector, first material thickness data for a first material and second material thickness data for a second material resulting from an iteration of an etch process using an etch recipe. The first material is located at a first reflectometry measurement point and the second material is located at a second reflectometry measurement point different from the first reflectometry measurement point. The operations further include determining one or more etch parameters based on at least the first material thickness data and the second material thickness data.

Multiple reflectometry for measuring etch parameters

An article, apparatus, and method for detecting an etch material selectivity is provided. A device including a first layer and a second layer is placed in a processing chamber. The first layer includes a first sense material deposited on a first portion of the device and a second sense material deposited on a second portion of the device. The second layer deposited on the first layer includes an etch material. During an etch process based on an initial set of etch parameter settings, a first amount of time to etch the second layer at the first portion of the device and a second amount of time to etch the second layer at the second portion of the device are measured. A first etch rate and a second etch rate of the processing chamber is determined based on the measured first amount of time, the measured second amount of time, and a thickness of the second layer. A first selectivity of the first etch material and a second selectivity of the second etch material is determined based on the first etch rate and the second etch rate. An optimized set of etch parameter settings for subsequent etch processes is determined based on the determined selectivities.

In-situ etch material selectivity detection system

An apparatus includes a base component and collimators housed within the base component. The collimators correspond to collection cylinders for sampling optical emission spectroscopy (OES) signals with respect to locations of a wafer in an etch chamber. The apparatus further includes a guide, operatively coupled to the plurality of collimators, to guide the sampling of the OES signals along paths for sampling the OES signals.

A system includes a memory and at least one processing device operatively coupled to the memory to facilitate an etch recipe development process by performing a number of operations. The operations include receiving a request to initiate an iteration of an etch process using an etch recipe to etch a plurality of materials each located at a respective one of a plurality of reflectometry measurement points, obtaining material thickness data for each of the plurality of materials resulting from the iteration of the etch process, and determining one or more etch parameters based on the material thickness data.

A disk drive includes a disk defining an opening, and a motor hub coupled to the disk. The motor hub further defines a swage ring extending at least partially into the opening of the disk, the swage ring swaged radially outwards into contact with the disk.

Disk to motor hub swage attachment

One aspect of a recording device includes a memory, a head configured to access the memory, and a photocatalytic filter configured to prevent contaminants from depositing on the memory or the head, the photocatalytic filter comprising a photocatalytic material, and a light-emitting diode configured to illuminate the photocatalytic material.

Magnetic recording drives with active photocatalytic filtration

A disk drive including a disk having a bottom surface and a base having a first surface lying along a first plane and a second surface lying along a second plane positioned substantially parallel to the first plane. The second surface is spaced apart from the first surface and is beneath at least a portion of the bottom surface of the disk. A damper of the disk drive is located on the second surface adjacent the first surface and is configured to contact a portion of the bottom surface of the disk when the disk is deflected toward the first surface.

Disk deflection damper for disk drive

A disk drive includes an inner frame that has a disk drive base and a disk drive cover. A disk, mounted on a rotary spindle attached to the disk drive base, defines a disk outer periphery that protrudes into a first side opening of the inner frame. A head actuator is attached to the disk drive base and to the disk drive cover. An outer enclosure includes an extruded hollow cylinder with a cross-sectional shape that is a continuous and unbroken ring that is substantially rectangular, and that surrounds a cavity. The outer enclosure surrounds the disk drive base and the disk drive cover. During assembly, the inner frame may be slid lengthwise into an open end of the outer enclosure, and the outer enclosure may be hermetically sealed to enclose air or helium in the cavity.

Disk drive having an inner frame with a side opening and an extruded hermetically sealed outer enclosure

A novel disk drive enclosure includes a disk drive base having a bottom portion and four side walls that define a cavity therebetween. At least one disk is mounted in the cavity. The disk drive also includes a top seal that includes a peripheral portion that overlies each of the four side walls and a central portion that spans the cavity. A metal flange protrudes from all four side walls of the disk drive base, and is folded over the peripheral portion of the top seal along all four side walls. The top seal is continuously adhered to the metal flange along an entire length of all four side walls. The disk drive enclosure encloses helium gas.

Disk drive having a base with a protruding peripheral metal flange that is folded over a top cover to enclose helium

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San Jose, CA, United States of America

Keith R Berding