Texas Instruments Corporation

Keith M Jarreau

Allan T Mitchell

Mark Eskew

Andrew Marshall

Pinghai Hao

Jozef C Mitros

Harvey J Stiegler

Ujas Natvarlal Patel

An analog differential amplifier circuit, such as an operational transconductance amplifier (OTA), with input offset correction capability. First and second analog floating gate (AFG) devices each include a trim transistor connected in parallel with a series transistor in first and second input legs, respectively, of the amplifier. Floating gate electrodes in the AFG devices are differentially programmed to correct for error in the output signal in response to zero input differential voltage at its inputs. Temperature stability is attained by programming the floating gate electrodes to gate voltages above the floating gate transistors. In one embodiment, the AFG devices each include a second trim transistor sharing the same floating gate electrode; the sum of the currents conducted by the second trim transistors is added, by way of a current mirror, to the tail current applied to the first and second input legs.

Mismatch correction in differential amplifiers using analog floating gate transistors

An integrated circuit with non-volatile memory cells shielded from ultraviolet light by a shielding structure compatible with chemical-mechanical processing. The disclosed shielding structure includes a roof structure with sides; along each side are spaced-apart contact posts, each with a width on the order of the wavelength of ultraviolet light to be shielded, and spaced apart by a distance that is also on the order of the wavelength of ultraviolet light to be shielded. The contact posts may be provided in multiple rows, and extending to a diffused region or to a polysilicon ring or both. The multiple rows may be aligned with one another or staggered relative to one another.

Ultraviolet energy shield for non-volatile charge storage memory

In an embodiment of the invention, a non-volatile anti-fuse memory cell is disclosed. The memory cell consists of a programmable n-channel diode-connectable transistor. The poly-silicon gate of the transistor has two portions. One portion is doped more highly than a second portion. The transistor also has a source with two portions where one portion of the source is doped more highly than a second portion. The portion of the gate that is physically closer to the source is more lightly doped than the other portion of the poly-silicon gate. The portion of the source that is physically closer to the lightly doped portion of the poly-silicone gate is lightly doped with respect to the other portion of the source. When the transistor is programmed, a rupture in the insulator will most likely occur in the portion of the poly-silicone gate that is heavily doped.

Non-volatile anti-fuse with consistent rupture

A single poly EEPROM cell in which the read transistor is integrated in either the control gate well or the erase gate well. The lateral separation of the control gate well from erase gate well may be reduced to the width of depletion regions encountered during program and erase operations. A method of forming a single poly EEPROM cell where the read transistor is integrated in either the control gate well or the erase gate well.

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Plano, TX, United States of America

Keith M Jarreau