International Business Machines Corporation

Globalfoundries Inc.

Keith K H Wong

Chih-Chao Yang

Carl John Radens

Takeshi Nogami

Michael Patrick Chudzik

Jinping Liu

Michael C Gaidis

David M Dobuzinsky

Joseph Francis Shepard, Jr

Jay William Strane

Louis L C Hsu

Roy Charles Iggulden

Min Dai

John K Debrosse

A semiconductor device is disclosed. The semiconductor device includes a substrate; and a gate structure disposed directly on the substrate, the gate structure including: a graded region with a varied material concentration profile; and a metal layer disposed on the graded region.

Semiconductor device including graded gate stack, related method and design structure

A semiconductor structure which includes a semiconductor substrate and a metal gate structure formed in a trench or via on the semiconductor substrate. The metal gate structure includes a gate dielectric; a wetting layer selected from the group consisting of cobalt and nickel on the gate dielectric lining the trench or via and having an oxygen content of no more than about 200 ppm (parts per million) oxygen; and an aluminum layer to fill the remainder of the trench or via. There is also disclosed a method of forming a semiconductor structure in which a wetting layer is formed from cobalt amidinate or nickel amidinate deposited by a chemical vapor deposition process.

Semiconductor structure having a wetting layer

A semiconductor device with openings of differing depths in a substrate or layer is described, as are related methods for its manufacture. Through selective deposition of a single mask layer, whereby low aspect ratio openings are substantially coated while high aspect ratio are at most partially coated, subsequent etching of the substrate or layer is restricted to uncoated portions of the high aspect ratio openings. The result is a substrate or layer with openings of more than one depth using a single mask layer. In a second embodiment, the selective deposition of a single mask layer is utilized to etch a layer while protecting underlying structures from etching. In a third embodiment, the selective deposition of a single mask layer is utilized to etch an opening into a layer wherein the opening has a sub-lithographic diameter, i.e., the diameter of the opening is smaller than can be achieved with the particular lithographic technique employed.

Etching openings of different depths using a single mask layer method and structure

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Wappingers Falls, NY, United States of America

Keith K H Wong