Nxp B.v.

Keith Heppenstall

Adam Brown

Adrian Koh

Ian Kennedy

A transistor () has a FET () and a temperature sensing diode () integrated within it. Gate drive circuit () is arranged to switch off FET () and in this case biasing circuit () drives a constant current through the diode (). The voltage across the diode () is measured by voltage sensor () which provides a measure of the temperature of the FET.

MOSFET with temperature sense facility

A circuit () is described for determining the current (I) in a load (), the circuit having a main transistor () and a sense transistor (), each transistor having a main current path () and a control terminal (), the main current paths each operably connected in parallel between the load and a ground terminal () and the control terminals being connected together. Means is provided for setting the voltage across the main current path () of the sense transistor () to a voltage level substantially equal to a predetermined portion of the voltage across the main current path () of the main transistor ().

Growing community of inventors

Cheshire, United Kingdom

Keith Heppenstall