Butterfly Network, Inc.

Life Technologies Corporation

Quantum-si Incorporated

Bfly Operations, Inc.

Melexis Tessenderlo N.v.

Smal Camera Technologies, Inc.

Cypress Semiconductor Corporation

Sensata Technologies, Inc.

Invisage Technologies, Inc.

Hyperfine Research, Inc.

Tesseract Health, Inc.

Hyperfine, Inc.

Hinz, Wolfgang

Rearick, Todd

Bustillo, James

Keith Glen Fife

Jonathan Marc Rothberg

Tyler S Ralston

Nevada J Sanchez

Gregory L Charvat

Susan A Alie

Farshid Ghasemi

Lawrence Camest West

Jason W Sickler

Kailiang Chen

Benjamin Cipriany

Ali Kabiri

Gerard M Schmid

Jeremy Lackey

Todd Rearick

Jianwei Liu

David Michael Boisvert

James M Bustillo

Paul E Glenn

Jungwook Yang

Hae-Seung Harry Lee

Jordan Owens

Brett J Gyarfas

Joseph Lutsky

Jaime Scott Zahorian

Jonathan C Schultz

Jack L Jewell

Paul Francis Cristman

Jeremy Christopher Jordan

Andrew J Casper

Shifeng Li

Lingyun Miao

Faisal R Ahmad

Jose Camara

John Glenn

Matthew De Jonge

Christopher Thomas McNulty

Mark James Milgrew

Kyle Preston

James Beach

David Grosjean

Gregory Corteville

Lane G Brooks

Michael Stephen Poole

Kim L Johnson

Matthew Scot Rosen

William Julian Mileski

Dajiang Yang

Ichiro Masaki

Vivek A Sikri

Sarp Satir

Guojun Chen

Alexander Goryaynov

Joseph D Clark

Andrew Betts

Wolfgang Hinz

David Elgena

Eric A G Webster

Brian Reed

Charles G Sodini

William Michael Lafferty

Lane Gearle Brooks

Jimmy Jia

Jarie G Bolander

Jonathan M Rothberg

Thomas Raymond Thurston

Daniel Rea McMahill

Chao Chen

Eric Ag Webster

Craig Wenger

Tom Thurston

Sewook Hwang

Mel Davey

Alexander Gondarenko

Nilesh Agarwalla

Described herein are techniques to reduce or remove the impact of secondary path photons and/or charge carriers on storage bins of an integrated device to improve noise performance, and thus, sample analysis. Some embodiments relate to optical rejection techniques such as including an optical barrier positioned to block at least some photons from reaching the storage bins. Some embodiments relate to electrical rejection techniques such as including an electrical barrier configured to block at least some charge carriers from reaching the storage bins along at least one secondary path. Some embodiments relate to an integrated device in which at least one storage bin is shaped and/or positioned relative to the photodetector to facilitate receipt of some charge carriers (e.g., fluorescent emission charge carriers) and/or photons and to impede receipt of other charge carriers (e.g., noise charge carriers) and/or photons.

Optical and electrical secondary path rejection

An ultrasound transducer device made by a process that includes the steps of forming depositing a first layer on a substrate, depositing a second layer on the first layer, patterning the second layer at a region corresponding to a location of a transducer cavity, depositing a third layer that refills regions created by patterning the second layer, planarizing the third layer to a top surface of the second layer, removing the second layer, conformally depositing a fourth layer over the first layer and the third layer, defining the transducer cavity in a support layer formed over the fourth layer; and bonding a membrane to the support layer.

Anti-stiction bottom cavity surface for micromachined ultrasonic transducer devices

System and methods for analyzing single molecules and performing nucleic acid sequencing. An integrated device may include multiple pixels with sample wells configured to receive a sample, which when excited, emits radiation. The integrated device includes a surface having a trench region recessed from a portion of the surface and an array of sample wells, disposed in the trench region. The integrated device also includes a waveguide configured to couple excitation energy to at least one sample well in the array and positioned at a first distance from a surface of the trench region and at a second distance from the surface in a region separate from the trench region. The first distance is smaller than the second distance. The system also includes an instrument that interfaces with the integrated device. The instrument may include an excitation energy source for providing excitation energy to the integrated device by coupling to an excitation energy coupling region of the integrated device.

Photonic structures and integrated device for detecting and analyzing molecules

A variable current trans-impedance amplifier (TIA) for an ultrasound device is described. The TIA may be coupled to an ultrasonic transducer to amplify an output signal of the ultrasonic transducer representing an ultrasound signal received by the ultrasonic transducer. During acquisition of the ultrasound signal by the ultrasonic transducer, one or more current sources in the TIA may be varied.

Trans-impedance amplifier for ultrasound device and related apparatus and methods

An integrated circuit includes a photodetection region configured to receive incident photons. The photodetection region is configured to produce a plurality of charge carriers in response to the incident photons. The integrated circuit also includes at least one charge carrier storage region. The integrated circuit also includes a charge carrier segregation structure configured to selectively direct charge carriers of the plurality of charge carriers into the at least one charge carrier storage region based upon times at which the charge carriers are produced.

Integrated device for temporal binning of received photons

A high data rate integrated circuit, such as an integrated circuit including a large sensor array, may be implemented using clock multipliers in individual power domains, coupled to sets of transmitters, including a transmitter pair configuration. Reference clock distribution circuitry on the integrated circuit distributes a relatively low speed reference clock. In a transmitter pair configuration, each pair comprises a first transmitter and a second transmitter in a transmitter power domain. Also, each pair of transmitters includes a clock multiplier connected to the reference clock distribution circuitry, and disposed between the first and second transmitters, which produces a local transmit clock.

High data rate integrated circuit with transmitter configuration

Aspects of the disclosure described herein related to packaging an ultrasound-on-a-chip. In some embodiments, an apparatus includes an ultrasound-on-a-chip that has through-silicon vias (TSVs) and an interposer coupled to the ultrasound-on-a-chip and including vias, where the ultrasound-on-a-chip is coupled to the interposer such that the TSVs in the ultrasound-on-a-chip are electrically connected to the vias in the interposer. In some embodiments, an apparatus includes an ultrasound-on-a-chip having bond pads, an interposer that has bond pads and that is coupled to the ultrasound-on-a-chip, and wirebonds extending from the bond pads on the ultrasound-on-a-chip to the bond pads on the interposer.

Methods and apparatuses for packaging an ultrasound-on-a-chip

An integrated circuit includes a photodetection region configured to receive incident photons. The photodetection region is configured to produce a plurality of charge carriers in response to the incident photons. The integrated circuit includes a charge carrier storage region. The integrated circuit also includes a charge carrier segregation structure configured to selectively direct charge carriers of the plurality of charge carriers directly into the at least one charge carrier storage region based upon times at which the charge carriers are produced.

Integrated photodetector with charge storage bin of varied detection time

An integrated circuit includes a photodetection region configured to receive incident photons. The photodetection region is configured to produce a plurality of charge carriers in response to the incident photons. The integrated circuit includes at least one charge carrier storage region. The integrated circuit also includes a charge carrier segregation structure configured to selectively direct charge carriers of the plurality of charge carriers directly into the at least one charge carrier storage region based upon times at which the charge carriers are produced.

Integrated photodetector with direct binning pixel

A hand-held ultrasound device, for placement on a subject, includes a semiconductor device and a housing to support the semiconductor device. The semiconductor device includes: a plurality of ultrasonic transducer elements; a plurality of pulsers coupled to the plurality of ultrasonic transducer elements; a plurality of waveform generators configured to drive the plurality of pulsers; receive processing circuitry configured to process ultrasound signals received by the plurality of ultrasonic transducer elements; and a plurality of independently controllable registers configured to store a plurality of different parameters for the waveform generators.

Ultrasonic imaging devices, systems and methods

An ultrasonic transducer device includes a patterned film stack disposed on first regions of a substrate, the patterned film stack including a metal electrode layer and a bottom cavity layer formed on the metal electrode layer. The ultrasonic transducer device further includes a planarized insulation layer disposed on second regions of the substrate layer, a cavity formed in a membrane support layer and a CMP stop layer, the CMP stop layer including a top layer of the patterned film stack and the membrane support layer formed over the patterned film stack and the planarized insulation layer. The ultrasonic transducer device also includes a membrane bonded to the membrane support layer. The CMP stop layer underlies portions of the membrane support layer but not the cavity.

Adaptive cavity thickness control for micromachined ultrasonic transducer devices

Micromachined ultrasonic transducers having pressure ports are described. The micromachined ultrasonic transducers may comprise flexible membranes configured to vibrate over a cavity. The cavity may be sealed, in some instances by the membrane itself. A pressure port may provide access to the cavity, and thus control of the cavity pressure. In some embodiments, an ultrasound device including an array of micromachined ultrasonic transducers is provided, with pressure ports for at least some of the ultrasonic transducers. The pressure ports may be used to control pressure across the array.

Pressure port for ultrasonic transducer on CMOS sensor

An ultrasound device is described. The ultrasound device may include a cavity, a membrane, and a sensing electrode. When an electrical signal is applied to the sensing electrode and a static bias is applied to the membrane, the membrane vibrates within the cavity and produces ultrasonic signals. The cavity, the membrane, and the sensing electrode may be considered a capacitive micromachined ultrasonic transducer (CMUT). The sensing electrode may be shaped as a ring, whereby the central portion of the sensing electrode is removed. Removal of the central portion of the sensing electrode may reduce the parasitic capacitance without substantially affecting the production of ultrasonic signals by the CMUT. This, in turn, can result in an increase in the signal-to-noise ratio (SNR) of the ultrasonic signals. The ultrasound device may further include a bond pad configured for wire bonding, and a trench electrically isolating the bond pad from the membrane.

Ultrasound devices

System and methods for analyzing single molecules and performing nucleic acid sequencing. An integrated device includes multiple pixels with sample wells configured to receive a sample, which when excited, emits radiation. The integrated device includes at least one waveguide configured to propagate excitation energy to the sample wells from a region of the integrated device configured to couple with an excitation energy source. A pixel may also include at least one element for directing the emission energy towards a sensor within the pixel. The system also includes an instrument that interfaces with the integrated device. The instrument may include an excitation energy source for providing excitation energy to the integrated device by coupling to an excitation energy coupling region of the integrated device. One of multiple markers distinguishable by temporal parameters of the emission energy may label the sample and configuration of the sensor within a pixel may allow for detection of a temporal parameter associated with the marker labeling the sample.

Integrated device with external light source for probing, detecting and analyzing molecules

Growing community of inventors

Palo Alto, CA, United States of America

Keith Glen Fife