Rodel Holdings, Inc.

Keith G Pierce

Peter A Burke

Vikas Sachan

Elizabeth A (Kegerise) Langlois

Terence M Thomas

Craig D Lack

Qianqiu (Christine) Ye

Sarah J Lane

David Gettman

A composition is provided in the present invention for polishing a composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as SiO ). The composition comprises an aqueous medium, an oxidant, an organic polymer that attenuates removal of the oxide film. The composition may optionally comprise a complexing agent and/or a dispersant.

Composition and method for polishing in metal CMP

A method for chemical mechanical planarization of a semiconductor structure comprised of a conductive metal interconnect layer, a barrier or liner film, and an underlying dielectric layer using a two-step polishing process is provided. In the first step, the conducting metal overburden is substantially removed with little removal of the barrier or liner layer or the underlying dielectric structure. In the second step, the barrier layer is removed with little removal of the underlying dielectric layer. Five different methods and associated slurry compositions are described for the second polishing step, each adjusted to the state of the wafer following the first step of polishing. By using the appropriate method, the integrity of the remaining semiconductor structure can be substantially retained.

Methods to control film removal rates for improved polishing in metal CMP

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Colorado Springs, CO, United States of America

Keith G Pierce