Analog Devices,inc.

Keith E Benson

Vincent Lixiang Bu

Michael Patrick Clark

Michael Baldwin Heiny

Thermal temperature sensors for power amplifiers are provided herein. In certain implementations, a semiconductor die includes a compound semiconductor substrate, and a power amplifier including a plurality of field-effect transistors (FETs) configured to amplify a radio frequency (RF) signal. The plurality of FETs are arranged on the compound semiconductor substrate as a transistor array. The semiconductor die further includes a semiconductor resistor configured to generate a signal indicative of a temperature of the transistor array. The semiconductor resistor is located adjacent to one end of the transistor array.

Thermal temperature sensors for power amplifiers

A packaged radio frequency (RF) module is disclosed. The module can include a substrate, a first die electrically and mechanically attached to the substrate, a second die electrically and mechanically attached to the substrate, an encapsulating material, and a lid attached to the substrate. The first die comprises a silicon-based die, such as an RF switch die, and the second die comprises a compound semiconductor die, such as an RF amplifier. The encapsulating material can protect electrical connections between the first die and the substrate. The substrate and the lid at least partially define an air cavity within which the first and the second die are mounted. An active surface of the second die is exposed to the air cavity.

Radio frequency communication systems

Low noise amplifiers (LNAs) with output limiting are provided herein. In certain implementations, a gallium nitride (GaN) LNA includes LNA amplification circuitry and an output limiter that is connected to an output of the LNA amplification circuitry and operable to limit an output power of the GaN LNA. By limiting the output signal power, a number of benefits are achieved, including protection of downstream circuitry receiving the GaN LNA's output signal. For example, such downstream circuitry can be fabricated using silicon or other fabrication technology associated with a lower signal power handling capability relative to that of the GaN LNA.

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Hopkinton, MA, United States of America

Keith E Benson