Matheson Tri-Gas, Inc.

International Business Machines Corporation

Globalfoundries Inc.

Keith Chung

Devendra K Sadana

Hong He

Paul D Brabant

Manabu Shinriki

A high order silane having a formula of SiH, in which n is an integer greater than 3, in combination with a germanium precursor gas is employed to deposit an epitaxial semiconductor alloy material including at least silicon and germanium on a single crystalline surface. The germanium precursor gas effectively reduces the gas phase reaction of the high order silane, thereby improving the thickness uniformity of the deposited epitaxial semiconductor alloy material. The combination of the high order silane and the germanium precursor gas provides a high deposition rate in the Frank-van der Merwe growth mode for deposition of a single crystalline semiconductor alloy material.

Low temperature epitaxy of a semiconductor alloy including silicon and germanium employing a high order silane precursor

Cyclic deposit and etch (CDE) selective epitaxial growth employs an etch chemistry employing a combination of hydrogen chloride and a germanium-containing gas to provide selective deposition of a silicon germanium alloy at temperatures lower than 625&#xb0; C. High strain epitaxial silicon germanium alloys having a germanium concentration greater than 35 atomic percent in a temperature range between 400&#xb0; C. and 550&#xb0; C. A high order silane having a formula of SinH2n+2, in which n is an integer greater than 3, in combination with a germanium-containing precursor gas is employed to deposit the silicon germanium alloy with thickness uniformity and at a high deposition rate during each deposition step in this temperature range. Presence of the germanium-containing gas in the etch chemistry enhances the etch rate of the deposited silicon germanium alloy material during the etch step.

Low temperature selective epitaxy of silicon germanium alloys employing cyclic deposit and etch

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Guilderland, NY, United States of America

Keith Chung