Samsung Electronics Co., Ltd.

Keith Chan

Hongzhong Zheng

Wonseok Lee

Tackhwi Lee

Dmytro Apalkov

Matthew Joseph Carey

Roman Chepulskyy

Alexey Vasilyevitch Khvalkovskiy

A computing system includes: an adaptive back-up controller configured to calculate an adaptive back-up time based on a reserve power source for backing up a volatile memory to a nonvolatile memory; and a processor core, coupled to the adaptive back-up controller, configured to back up at least a portion of the volatile memory to the nonvolatile memory within the adaptive back-up time.

Computing system with adaptive back-up mechanism and method of operation thereof

A computing system includes: an adaptive back-up controller configured to calculate an adaptive back-up time based on a reserve power source for backing up a volatile memory to a nonvolatile memory; and a processor core, coupled to the adaptive back-up controller, configured to back up at least a portion of the volatile memory to the nonvolatile memory within the adaptive back-up time based on a back-up priority.

A magnetic junction usable in magnetic devices is described. The magnetic junction includes a reference layer, a free layer, a nonmagnetic spacer layer between the reference and free layers, and a rare earth-transition metal (RE-TM) layer in the reference and/or free layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. If the RE-TM layer is in the free layer then the RE-TM layer is between hard and soft magnetic layers in the free layer. In this aspect, the RE-TM layer has a standby magnetic moment greater than a write magnetic moment. If the RE-TM layer is in the reference layer, then the magnetic junction includes a second RE-TM layer. In this aspect, a first saturation magnetization quantity of the RE-TM layer matches a second saturation magnetization quantity of the second RE-TM layer over an operating temperature range.

Method and system for providing magnetic junctions with rare earth-transition metal layers

A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. At least one of the free and pinned layers includes at least one engineered Heusler structure having a first magnetic layer, a second magnetic layer and an amorphous layer between the magnetic layers. At least one of the first and second magnetic layer(s) is a Heusler layer. The first magnetic layer's perpendicular magnetic anisotropy energy (PMAE) exceeds is out-of-plane demagnetization energy. The second magnetic layer's PMAE exceeds its out-of-plane demagnetization energy. The free layer and/or the pinned layer has a PMAE greater than an out-of-plane demagnetization energy. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.

Method and system for providing an engineered magnetic layer including Heusler layers and an amorphous insertion layer

A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a plurality of magnetic layers including a nonmagnetic spacer layer. The magnetic junction also includes at least one diffusionless transformation layer. The magnetic junction is configured to be switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

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San Jose, CA, United States of America

Keith Chan