Air Products and Chemicals, Inc.

Keith Cendak

Scott Jeffrey Weigel

Martin Devenney

Brian Keith Peterson

John F Kirner

James Edward MacDougall

Konstantinos Chondroudis

C Eric Ramberg

Thomas Albert Braymer

Keith Douglas Campbell

Thomas Alan Deis

Lisa Deis

Lisa Deis, Legal Representative

Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention, the performance of the dielectric material may be improved by controlling the weight percentage of ethylene oxide groups in the at least one porogen.

Compositions for preparing low dielectric materials

Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. These materials are characterized as having a dielectric constant (&#x3ba;) a dielectric constant of about 3.7 or less; a normalized wall elastic modulus (E'), derived in part from the dielectric constant of the material, of about 15 GPa or greater; and a metal impurity level of about 500 ppm or less. Low dielectric materials are also disclosed having a dielectric constant of less than about 1.95 and a normalized wall elastic modulus (E&#x2032;), derived in part from the dielectric constant of the material, of greater than about 26 GPa.

Low dielectric materials and methods for making same

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Millbrae, CA, United States of America

Keith Cendak