Smart Picture Technologies, Inc.

University of California

Keith Beardmore

Kari Myllykoski

Mark O Freeman

Dejan Jovanovic

Dejan Jovanovich

James H Grotelueschen

Niels G Jensen

A Quantified Image Measurement System that creates accurate physical measurement data from digital pictures is disclosed. The system can use any image format and enhances the image file with measurement data and data transformation information that enables the creation of any type of geometrical or dimensional measurement from the stored photograph. This file containing the original digital image along with the supplemental data is referred to as a Quantified Image File or QIF. The QIF can be shared with other systems via email, cloud syncing or other types of sharing technology. Once shared, existing systems such as CAD applications or web/cloud servers can use the QIF and the associated QIF processing software routines to extract physical measurement data and use the data for subsequent processing or building geometrically accurate models of the objects or scene in the image. Additionally smart phones and other portable devices can use the QIF to make measurements on the spot or share between portable devices. In addition, the quantified image measurement system of this invention eliminates the need for capturing the image from any particular viewpoint by using multiple reference points and software algorithms to correct for any off-angle distortions.

Image based measurement system

Aspects disclosed herein provide methods, systems, and devices for 3D image capture based on a Structure from Motion (SFM) imaging technique with simplified pose detection. The present disclosure provides a straightforward method to directly track a camera's motion (pose detection) thereby removing a substantial portion of the computing load needed to build a dimensionally accurate 3D model from a sequence of images taken by the camera.

Method and system for 3D capture based on structure from motion with simplified pose detection

A computer-implemented molecular dynamics-based process simulates a distribution of ions implanted in a semiconductor substrate. The properties of the semiconductor substrate and ion dose to be simulated are first initialized, including an initial set of splitting depths that contain an equal number of virtual ions implanted in each substrate volume determined by the splitting depths. A first ion with selected velocity is input onto an impact position of the substrate that defines a first domain for the first ion during a first timestep, where the first domain includes only those atoms of the substrate that exert a force on the ion. A first position and velocity of the first ion is determined after the first timestep and a second domain of the first ion is formed at the first position. The first ion is split into first and second virtual ions if the first ion has passed through a splitting interval. The process then follows each virtual ion until all of the virtual ions have come to rest. A new ion is input to the surface and the process repeats until all of the ion dose has been input. The resulting ion rest positions form the simulated implant distribution.

Dopant profile modeling by rare event enhanced domain-following molecular dynamics

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Santa Fe, NM, United States of America

Keith Beardmore