Kla Tencor Corporation

Tencor Instruments

Lam Research Corporation

Kla-tencor Technologies Corporation

Keith B Wells

Mehrdad Nikoonahad

Brian C Leslie

Lisheng Gao

Kris Bhaskar

Grace Hsiu-Ling Chen

Jing Zhang

Xiaochun Li

Tao Luo

Ralph T Johnson

Markus B Huber

Mehdi Vaez-Iravani

Michal Danek

Yunsang Kim

Richard Alan Gottscho

Alan M Schoepp

Brian Duffy

Scott Allen Young

Jamie Michael Sullivan

Wayne McMillan

Se Baek Oh

Keith J Hansen

Grace H Chen

Stan Stokowski

Lee K Galbraith

John Raymond Jordan, Iii

Kapil Umesh Sawlani

Ping Gu

Philip R Rigg

He Zhang

Dong Woo Paeng

Steven Biellak

Hung Nguyen

David S Calhoun

Nan Bai

John R Iii Jordon

A substrate processing system includes a processing chamber, a substrate support, a laser, and a collimating assembly. The substrate support is disposed in the processing chamber and is configured to support a substrate. The laser is configured to generate a laser beam. The collimating assembly includes lenses or mirrors arranged to direct the laser beam at the substrate to heat an exposed material of the substrate. The lenses or mirrors are configured to direct the laser beam in a direction within a predetermined range of being perpendicular to a surface of the substrate.

Atomic layer etch and deposition processing systems including a lens circuit with a tele-centric lens, an optical beam folding assembly, or a polygon scanner

Defects on a substrate comprising electronic components can be classified with a computational defect analysis system that may be implemented in multiple stages. For example, a first stage classification engine may process metrology data to produce an initial classification of defects. A second stage classification engine may use the initial classification, along with manufacturing information and/or prior defect knowledge to output probabilities that the defects are caused by one or more potential sources.

Defect classification and source analysis for semiconductor equipment

Methods and systems for generating a high resolution image for a specimen from one or more low resolution images of the specimen are provided. One system includes one or more computer subsystems configured for acquiring one or more low resolution images of a specimen. The system also includes one or more components executed by the one or more computer subsystems. The one or more components include a model that includes one or more first layers configured for generating a representation of the one or more low resolution images. The model also includes one or more second layers configured for generating a high resolution image of the specimen from the representation of the one or more low resolution images.

Generating high resolution images from low resolution images for semiconductor applications

Methods and systems for detecting defects on a wafer are provided. One system includes one or more computer subsystems configured for generating a rendered image based on information for a design printed on the wafer. The rendered image is a simulation of an image generated by the optical inspection subsystem for the design printed on the wafer. The computer subsystem(s) are also configured for comparing the rendered image to an optical image of the wafer generated by the optical inspection subsystem. The design is printed on the wafer using a reticle. In addition, the computer subsystem(s) are configured for detecting defects on the wafer based on results of the comparing.

Optical die to database inspection

Hybrid inspectors are provided. One system includes computer subsystem(s) configured for receiving optical based output and electron beam based output generated for a specimen. The computer subsystem(s) include one or more virtual systems configured for performing one or more functions using at least some of the optical based output and the electron beam based output generated for the specimen. The system also includes one or more components executed by the computer subsystem(s), which include one or more models configured for performing one or more simulations for the specimen. The computer subsystem(s) are configured for detecting defects on the specimen based on at least two of the optical based output, the electron beam based output, results of the one or more functions, and results of the one or more simulations.

Hybrid inspectors

Methods and systems for detecting defects on a wafer are provided. One system includes one or more computer subsystems configured for generating a rendered image based on information for a design printed on the wafer. The rendered image is a simulation of an image generated by an optical inspection subsystem for the design printed on the wafer. Generating the rendered image includes one or more steps, and the computer subsystem(s) are configured for performing at least one of the one or more steps by executing a generative model. The computer subsystem(s)) are also configured for comparing the rendered image to an optical image of the wafer generated by the optical inspection subsystem. The design is printed on the wafer using a reticle. In addition, the computer subsystem(s) are configured for detecting defects on the wafer based on results of the comparing.

Disclosed are methods and apparatus for detecting defects in a semiconductor sample. An inspection tool is used to collect intensity data sets at a plurality of focus settings from each of a plurality of xy positions of the sample. A polynomial equation having a plurality of coefficients is extracted for each of the xy position's collected intensity data sets as a function of focus setting. Each of the coefficients' set of values for the plurality of xy positions is represented with a corresponding coefficient image plane. A target set of coefficient image planes and a reference set of coefficient image planes are then analyzed to detect defects on the sample.

Wafer inspection with focus volumetric method

In an optical scanning system for detecting particles and pattern defects on a sample surface, a light beam is focused to an illuminated spot on the surface and the spot is scanned across the surface along a scan line. A detector is positioned adjacent to the surface to collect scattered light from the spot where the detector includes a one- or two-dimensional array of sensors. Light scattered from the illuminated spot at each of a plurality of positions along the scan line is focused onto a corresponding sensor in the array. A plurality of detectors symmetrically placed with respect to the illuminating beam detect laterally and forward scattered light from the spot. The spot is scanned over arrays of scan line segments shorter than the dimensions of the surface. A bright field channel enables the adjustment of the height of the sample surface to correct for errors caused by height variations of the surface. Different defect maps provided by the output of the detectors can be compared to identify and classify the defects. The imaging function of the array of sensors combines the advantages of a scanning system and an imaging system while improving signal/background ratio of the system.

Optical scanning system for surface inspection

Systems and methods for inspecting a surface of a specimen such as a semiconductor wafer are provided. A system may include an illumination system configured to direct a first beam of light to a surface of the specimen at an oblique angle of incidence and to direct a second beam of light to a surface of the specimen at a substantially normal angle. The system may also include a collection system configured to collect at least a portion of the first and second beams of light returned from the surface of the specimen. In addition, the system may include a detection system. The detection system may be configured to process the collected portions of the first and second beams of light. In this manner, a presence of defects on the specimen may be detected from the collected portions of the first and second beams of light.

Systems and methods for simultaneous or sequential multi-perspective specimen defect inspection

A high throughput surface inspection system with enhanced detection sensitivity is described. The acquired data is processed in real time at a rate of below 50 MHz thereby reducing the cost for data processing. Anomalies are detected and verified by comparing adjacent repeating patterns and the height of the surface is monitored and corrected dynamically to reduce misregistration errors between adjacent repeating patterns. Local thresholds employing neighborhood information are used for detecting and verifying the presence of anomalies. The sampled point spread function of the combined illumination and collection system is exploited for anomaly detection and verification.

Surface inspection system

Light scattered from illuminated spot on a patterned wafer is first passed through a di-electric filter and then by an optical fiber bundle to a detector. The di-electric filter controls the aperture of the light that is passed to a desired azimuth angle and the optical fiber further limits the aperture.

Particle detection system employing a subsystem for collecting scattered

The position detector has a sensitivity characteristic graded along a direction transverse to the surface, so that the output of the position detector is used to determine a height of the surface. A surface height detection and positioning device for use in a surface inspection system. An incident beam of light impinges obliquely upon the surface, and a position detector is disposed to receive specularly reflected light, producing a plurality of electrical signals, with a mechanical window, defining an aperture, placed in front of the detector. The aperture's width, along the scan direction, is of sufficient size so as to create a train of signals from each of the plurality of electrical signals, having a frequency equal to the scan frequency. These electrical signals carry information responsive to both the position of reflected beam impinging on the detector and the beam's intensity and are, in turn, related to a height of the surface. To abrogate information responsive to intensity variations at the position sensitive detector, an electronic circuit is employed which determines the sum and the difference of the plurality of signals relating to wafer height and beam intensity, producing a summed signal and a difference signal respectively. The difference signal is then divided by the summed signal, thereby producing a normalized signal which represents the height of the wafer surface without regards to these reflected beam intensity variations. These signals are synchronized to the scan frequency which facilitates removing unwanted signals resulting from thermal drifts and ambient light.

Optical wafer positioning system

Growing community of inventors

Santa Cruz, CA, United States of America

Keith B Wells