Semiconductor Energy Laboratory Co., Ltd.

Kabushiki Kaisha Toshiba

Infineon Technologies Ag

Tokyo Electron Sagami Limited

Other

International Business Machines Corporation

Keitaro Imai

Shunpei Yamazaki

Shinji Maekawa

Osamu Nakamura

Makoto Furuno

Jun Koyama

Koji Yamakawa

Tomonori Aoyama

Satoshi Seo

Atsuo Isobe

Kikuo Yamabe

Aya Anzai

Yutaka Okazaki

Yasuko Watanabe

Toshinari Sasaki

Kosei Noda

Yuta Endo

Haruo Okano

Ken Nakao

Osamu Arisumi

Hitomi Sato

Bum-ki Moon

Mizuho Ikarashi

Toru Takayama

Katsuya Okumura

Junya Maruyama

Yuugo Goto

Yumiko Ohno

Katsuhiko Hieda

Masahiro Kiyotoshi

Katsuaki Natori

Kazuhiro Eguchi

Nicolas Nagel

Hiroshi Itokawa

Andreas Hilliger

Gerhard Beitel

Yasunori Okayama

Bum Ki Moon

Seikou Ueno

Kiyoshi Kato

Ryota Katsumata

Ryoji Nomura

Kyoichi Suguro

Yoshitaka Tsunashima

Rajarao Jammy

Johnathan E Faltermeier

Masakazu Murakami

Kazuya Hanaoka

Viraj Yashawant Sardesai

Yuto Yakubo

Joseph Francis Shepard, Jr

Keisuke Nakazawa

Yoshinori Ieda

Yuki Hata

Koji Muranaka

Mitsutoshi Koyama

Bum-Ki Moon

Jean-Marc Rousseau

Seiko Ueno

The semiconductor device includes: a transistor having an oxide semiconductor layer; and a logic circuit formed using a semiconductor material other than an oxide semiconductor. One of a source electrode and a drain electrode of the transistor is electrically connected to at least one input of the logic circuit, and at least one input signal is applied to the logic circuit through the transistor. The off-current of the transistor is preferably 1&#xd7;10A or less.

Semiconductor device

It is an object to manufacture a semiconductor device in which a transistor including an oxide semiconductor has normally-off characteristics, small fluctuation in electric characteristics, and high reliability. First, first heat treatment is performed on a substrate, a base insulating layer is formed over the substrate, an oxide semiconductor layer is formed over the base insulating layer, and the step of performing the first heat treatment to the step of forming the oxide semiconductor layer are performed without exposure to the air. Next, after the oxide semiconductor layer is formed, second heat treatment is performed. An insulating layer from which oxygen is released by heating is used as the base insulating layer.

Semiconductor device and method of manufacturing the same

It is an object of the present invention to provide a display device preventing the external invasion of water and/or oxygen and preventing the deterioration of a luminous element due to these invading substances and to provide a production method including simple production steps for producing the display device. The invention provides a display device having a sealing material on the rim of an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Further, the invention provides a display device having a barrier body on an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Furthermore, the application of droplet discharge technique in production steps for producing the display device can eliminate a photolithography step such as exposing and developing. Thus, a method of producing a display device having an improved yield is provided.

Display device and method for manufacturing the same

At least one or more of a conductive layer which forms a wiring or an electrode and a pattern necessary for manufacturing a display panel such as a mask for forming a predetermined pattern is formed by a method capable of selectively forming a pattern to manufacture a liquid crystal display device. A droplet discharge method capable of forming a predetermined pattern by selectively discharging a droplet of a composition in accordance with a particular object is used as a method capable of selectively forming a pattern in forming a conductive layer, an insulating layer, or the like.

Method for manufacturing display device

Conventionally, photolithography and anisotropic etching are performed to form a plug between an electrode and a wiring, etc., thereby increasing the number of steps, getting the throughput worse, and producing unnecessary materials. To solve the problems, the present invention provides a method for manufacturing a display device, including the formation steps of a conductive layer or wirings, and a contact plug that can treat a larger substrate. In the case of forming a plug for electrically connecting conductive patterns comprising plural layers, a pillar made of a conductor is formed over a base conductive layer pattern, and then, after an insulating film is formed over the entire surface, the insulating film is etched back to expose the conductor pillar, and a conductive pattern in an upper layer is formed by ink jetting. In this case, when the conductor pillar is processed, a resist to be a mask can be formed in itself by ink jetting.

Display device and manufacturing method thereof

Display device comprising a self-luminous light emitter and a barrier body in direct contact with a sealing material

Display device

The semiconductor device is provided in which a plurality of memory cells each including a first transistor, a second transistor, and a capacitor is arranged in matrix and a wiring (also referred to as a bit line) for connecting one of the memory cells and another one of the memory cells and a source or drain region in the first transistor are electrically connected through a conductive layer and a source or drain electrode in the second transistor provided therebetween. With this structure, the number of wirings can be reduced in comparison with a structure in which the source or drain electrode in the first transistor and the source or drain electrode in the second transistor are connected to different wirings. Thus, the integration degree of a semiconductor device can be increased.

Storage device comprising semiconductor elements

Provided is a means for improving the capability of injecting electrons from a cathode in a luminous element and solving problems about the production process thereof. In the present invention, a material having a smaller work function than a cathode material is used to form an inorganic conductive layer between the cathode and an organic compound layer. In this way, the capability of injecting electrons from the cathode can be improved. Furthermore, the film thereof can be thicker than that of a conventional cathode buffer layer formed by using an insulating material. Therefore, the film thickness can easily be controlled, and a decrease in production costs and an improvement in yield can be achieved.

Luminous device

Experience shows that, in a material containing oxygen as a main component, an excess or deficiency of trace amounts of oxygen with respect to a stoichiometric composition, or the like affects properties of the material. An oxygen diffusion evaluation method of an oxide film stacked body includes the steps of: measuring a quantitative value of one of oxygen isotopes of a substrate including a first oxide film and a second oxide film which has an existence proportion of an oxygen isotope different from an existence proportion of an oxygen isotope in the first oxide film in a depth direction, by secondary ion mass spectrometry; and evaluating the one of the oxygen isotopes diffused from the first oxide film to the second oxide film.

Oxygen diffusion evaluation method of oxide film stacked body

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Yokohama, Japan

Keitaro Imai