Mitsubishi Electric Corporation

Keitaro Ichikawa

Ken Sakamoto

Taketoshi Shikano

Fumihito Kawahara

Yuji Shikasho

Shuhei Yokoyama

Tetsuya Ueda

Shogo Shibata

Naoki Ikeda

Yuki Yoshioka

Kazuki Koda

Kazuo Funahashi

A semiconductor device includes: a semiconductor element; a mold member covering the semiconductor element; and a first terminal and a second terminal electrically connected to the semiconductor element, protruding from one side of the mold member, and alternating along the one side. The first terminal includes a first bend, and the second terminal includes: a second bend located further from the one side of the mold member than the first bend, and having the same width as the first bend in plan view.

Semiconductor device with bent terminals

The third side surface includes inclined surfaces inclined in a direction in which a center in an up-down direction of the third side surface is convex. The mold resin further includes a residual section provided in the center of the third side surface and a dowel section provided between the inclined surface and the residual section. The dowel section projects further in a lateral direction than the inclined surface. The residual section further projects in the lateral direction than the dowel section and has a fracture surface perpendicular to the up-down direction.

Semiconductor device and method of manufacturing the same

Provided are a power semiconductor device using a lead frame, in which deformation and bending of terminals is suppressed, insulation is secured between terminals, and mounting onto a control board is facilitated, and a manufacturing method thereof. A package in which a semiconductor element mounted on a lead frame is sealed, terminals being bent and exposed from side surfaces of the package, and, a terminal bending portion being a portion bent in each of the terminals, a width thereof being larger than a width of a tip of the terminal, and being equal to or smaller than the width of a contact portion of the terminal in contact with the package are provided; therefore, deformation and bending of the terminals is suppressed, a necessary insulation is secured between the adjacent terminals, and mounting onto a control board is facilitated.

Power semiconductor device and manufacturing method thereof

Inner leads having die pads having upper surfaces to which semiconductor elements are mounted each have a stepped profile, and surfaces of portions of the inner leads are exposed from a sealing resin in plan view. Outer leads connected to the inner leads have first bends at side surfaces of the sealing resin to extend in a direction on a side of the upper surfaces of the die pads, so that a miniaturized semiconductor device can be obtained.

Semiconductor device having inner lead exposed from sealing resin, semiconductor device manufacturing method thereof, and power converter including the semiconductor device

A transfer-mold type power module includes a plurality of electrode terminals that is arranged so as to protrude in the same direction from a target side surface of a package. A tie bar cutting residue protruding from a first side surface of each of the electrode terminals and a tie bar cutting residue protruding from a second side surface of each of the electrode terminals are different in position in a length direction of each of the electrode terminals. Each of the electrode terminals has a shape bent at a position including tie bar cutting residue closer to the package, with a width direction of each of the electrode terminals as an axis.

Transfer-mold type power module and lead frame

A semiconductor apparatus according to the invention of the present application includes a base plate, a lead frame having a first surface and a second surface being a surface opposite to the first surface, the second surface being bonded to an upper surface of the base plate, a semiconductor device provided on the first surface of the lead frame, and a mold resin covering the upper surface of the base plate, the lead frame, and the semiconductor device, wherein the mold resin is provided with a terminal insertion hole that extends from the surface of the mold resin to the lead frame and in which a press-fit terminal is inserted, and the lead frame is provided with an opening portion which intercommunicates with the terminal insertion hole and into which the press-fit terminal is press-fitted.

Semiconductor apparatus, power conversion device, and method for manufacturing semiconductor apparatus

It is an object of the present invention to provide a method for manufacturing a resin-sealed power semiconductor device that facilitates the separation of a suspension lead from a mold resin and a lead frame. A method for manufacturing a resin-sealed power semiconductor device according to the present invention includes the following steps: (a) sealing a semiconductor element and a lead frame, to prepare a sealed body in which a terminal lead and a suspension lead that are included in the lead frame project outward from a side of the mold resin; (b) punching a portion of the suspension lead, the portion projecting from the mold resin, with a first punch in a first direction, to separate the suspension lead from the mold resin; and (c) punching the projecting portion of the suspension lead with a second punch in a second direction.

Method for manufacturing resin-sealed power semiconductor device

A lead frame includes a plurality of circuit patterns which each have a die pad and an electrode terminal portion and are disposed in a band shape, a tie bar, a frame portion and a suspension lead. Cut are a connection portion between electrode terminals and the frame portion, a connection portion between the frame portion and the tie bar at both end portions in a disposition direction of circuit patterns, and a connection portion from a connection part of the frame portion with the tie bar, between the circuit patterns to a part of the frame portion extending in the disposition direction. The electrode terminal portion is bent to extend to a direction of an upper surface of a semiconductor element. The lead frame is collectively resin-sealed while exposing the tie bar and the electrode terminal portion above the tie bar.

Semiconductor device and manufacturing method thereof

An object is to provide a technique in which a cost reduction in a power semiconductor device can be achieved while maintaining heat dissipation performance as much as possible. A power semiconductor device includes a leadframe, a power semiconductor element disposed on an upper surface of the leadframe, and an insulating layer disposed on a lower surface of the leadframe. At least a partial line of a peripheral line of a region where the insulating layer is disposed, on the lower surface, is aligned, in top view, with at least a partial line of an expanded peripheral line obtained by shifting outwardly, by the amount corresponding to the thickness of the leadframe, the peripheral line of the region where the power semiconductor element is disposed, on the upper surface.

Growing community of inventors

Tokyo, Japan

Keitaro Ichikawa