Hamamatsu-photonics K.k.

Hitachi, Ltd.

Hamamatsu Photonix K.k.

Keitaro Hitomi

Masanori Kinpara

Toshiyuki Onodera

Shinichi Kojima

Hiroshi Kitaguchi

Kensuke Amemiya

Kazuma Yokoi

Yuuichirou Ueno

Norihito Yanagita

Katsutoshi Tsuchiya

Tadayoshi Shoji

The present embodiment relates to a radiation detector having a structure enabling suppression of polarization in a thallium bromide crystalline body and suppression of corrosion of an electrode in the air. The radiation detector comprises a first electrode, a second electrode, and a thallium bromide crystalline body provided between the first and second electrodes. One of the first and the second electrodes includes an alloy layer and a low-resistance metal layer provide on the alloy layer. The alloy layer is comprised of an alloy of metallic thallium and another metal different from the metallic thallium. The low-resistance metal layer has a resistance value lower than a resistance value of the alloy layer and is electrically connected to a pad on a readout circuit while the radiation detector is mounted on the readout circuit.

Radiation detector

A radiation detector has a structure enabling suppression of polarization in a thallium bromide crystalline body and suppression of corrosion of an electrode in the air. The radiation detector comprises a first electrode, a second electrode, and a thallium bromide crystalline body provided between the first and second electrodes. At least one of the first electrode and the second electrode includes an alloy layer. The alloy layer is comprised of an alloy of metallic thallium and another metal different from the metallic thallium.

Radiation detector having an alloyed electrode

The present invention provides a semiconductor radiation detector and radiation detection apparatus capable of improving energy resolution and the semiconductor radiation detection apparatus includes a semiconductor radiation detector and a signal processing circuit which processes a radiation detection signal output from the semiconductor radiation detector. The semiconductor radiation detector is provided with anode electrodes A and cathode electrodes C disposed so as to face each other with semiconductor radiation detection elements placed in-between. The semiconductor radiation detection element is made up of a single crystal of thallous bromide containing trivalent thallium (e.g., tribromobis thallium). The semiconductor radiation detector containing such a semiconductor radiation detection element reduces lattice defects in the single crystal and thereby increases charge collection efficiency.

Semiconductor radiation detector and radiation detection apparatus

Growing community of inventors

Sendai, Japan

Keitaro Hitomi