Sony Corporation

Keitaro Endo

Kazuhiro Ohba

Tetsuya Mizuguchi

Takeyuki Sone

Shinya Kubo

Hiroaki Narisawa

Tetsuya Yamamoto

Masanori Hosomi

Yutaka Higo

Kazuhiro Bessho

Kazuhiko Hayashi

Hiroshi Kano

A memory element having a storage layer containing an ion source layer between a first electrode and a second electrode is provided. The memory element stores information by changing an electrical characteristic of the storage layer, wherein at least Zr is added to the ion source layer as a metal element together with an ion conducting material.

Memory element and memory device

In a magnetoresistive effect element using a ferromagnetic tunnel junction having a tunnel barrier layer sandwiched between at least a pair of ferromagnetic layers, a magnetization free layer comprising one of the ferromagnetic layers is composed of a single layer of a material having an amorphous or microcrystal structure or a material layer the main portion of which has an amorphous or microcrystal structure. The magnetoresistive effect element can produce excellent magnetic-resistance characteristics, and a magnetic memory element and a magnetic memory device using the magnetoresistive effect element as a memory element thereof can improve both of write and read characteristics at the same time.

Magnetoresistive effect element, magnetic memory element magnetic memory device and manufacturing methods thereof

A manufacturing method of a magnetic memory device, wherein the inventive method does not require any special technique for forming pattern, but bilaterally ensures precision for processing a tunnel magneto-resistive effect element (called TMR element) and self-matching formation of connecting elements. The manufacturing method of a magnetic memory device comprises a processing step of forming a tunnel magneto-resistive effect film sandwiching a tunnel barrier layer between a magnetic pinned layer and a memory layer into a predetermined elementary configuration by applying a mask layer, wherein the mask layer is formed by applying a plating process.

Manufacturing method of magnetic memory device

Growing community of inventors

Miyagi, Japan

Keitaro Endo