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Lapis Semiconductor Co., Ltd.

Keita Yasutomi

Noriyuki Miura

Atsushi Yabata

Shoji Kawahito

A semiconductor device in which an SOI substrate having an element region in which circuit elements are formed, an insulation layer having a first surface adjoining the SOI substrate, and a support substrate of a first conductivity type are laminated. On the SOI substrate, a transfer electrode configured to transfer charges generated in the support substrate to a third semiconductor layer is formed in a region different from the element region, and the transfer electrode and the third semiconductor layer are adjacent in plan view.

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SHIZUOKA, Japan

Keita Yasutomi