Kabushiki Kaisha Toshiba

Sony Semiconductor Solutions Corporation

Sony Corporation

Toshiba Electronic Devices & Storage Corporation

Canon Medical Systems Corporation

Keita Sasaki

Honam Kwon

Ikuo Fujiwara

Hideyuki Funaki

Kazuhiro Suzuki

Koichi Ishii

Hiroto Honda

Masaki Atsuta

Hitoshi Yagi

Yuki Nobusa

Naoki Kawazu

Yuichi Motohashi

Atsushi Suzuki

Takumi Oka

Risako Ueno

Mariko Shimizu

Masako Ogata

Rei Hasegawa

Satoshi Yamamoto

Kazuaki Okamoto

Mohammad Munirul Haque

Masahiro Baba

Yasushi Shinjo

Go Kawata

Shunsuke Kimura

Tsutomu Nakajima

Jun Hashizume

Fumihito Yasuma

Masaki Murozuka

Ryo Hirono

Kyoichi Takenaka

Keita Takeuchi

Makoto Satou

Nobuhiko Fujimori

According to one embodiment, a light detector includes an element including a photodiode. A plurality of the elements are provided. The element includes a structure body for at least a portion of the plurality of elements. The structure body surrounds the photodiode and has a different refractive index from the photodiode. At least portions of the structure bodies are separated from each other.

Light detector, light detection system, lidar device, and vehicle

Provided is an imaging device that includes an imaging unit that performs an imaging operation, a data generator that generates first power supply voltage data corresponding to a first power supply voltage and a flag generation section that generates a flag signal for the first power supply voltage by comparing the first power supply voltage data and first reference data. The first power supply voltage is supplied to the imaging unit.

Imaging device, imaging system, and imaging method

According to one embodiment, a light detector includes a plurality of elements, a plurality of separation parts, a fourth semiconductor region, a fifth semiconductor region, a first interconnect, a first quenching part, and a second interconnect. The elements are located in a cell region and arranged. Each of the elements includes first, second, and third semiconductor regions. The second semiconductor region is located on the first semiconductor region. The third semiconductor region is located on the second semiconductor region. The separation parts are located respectively around the elements. The fourth semiconductor region is located around each of the separation parts. The fifth semiconductor region is located on the fourth semiconductor region. The first interconnect is electrically connected to the third semiconductor regions. The first quenching part is electrically connected to the first interconnect. The second interconnect is electrically connected to the fifth semiconductor region.

Light detector, light detection system, LIDAR device, and mobile body

The degree of freedom of an abnormality detection target location in a solid-state imaging device in which a plurality of substrates are joined is improved. A semiconductor device includes a connection line and a detection circuit. A plurality of semiconductor substrates are joined in the semiconductor device. Then, in the semiconductor device, the connection line is wired across the plurality of semiconductor substrates. The detection circuit detects the presence or absence of an abnormality in a joint surface of the plurality of semiconductor substrates based on an energization state of the connection line when enable has been set by a predetermined control signal.

Semiconductor device and test system

According to one embodiment, a light detector includes a first semiconductor layer of a first conductivity type, a first region, a quenching part, a second region, and a first layer. The first region is located on a portion of the first semiconductor layer, includes a first-conductivity-type first semiconductor region that has a higher first-conductivity-type impurity concentration than the first semiconductor layer, and includes a second semiconductor region of a second conductivity type provided on the first semiconductor region. The quenching part is electrically connected to the second semiconductor region. The second region is located on another portion of the first semiconductor layer, includes a second-conductivity-type third semiconductor region, and includes a first-conductivity-type fourth semiconductor region provided on a portion of the third semiconductor region. The first layer is located on the second region and includes a resin that absorbs or reflects light.

Light detector, light detection system, LIDAR device, and moving body

According to one embodiment, a light detector includes a plurality of elements. Each of the elements includes a first semiconductor region, a second semiconductor region, and a third semiconductor region. The second semiconductor region is located on the first semiconductor region and has a higher first-conductivity-type impurity concentration than the first semiconductor region. The third semiconductor region is located on the second semiconductor region. The elements are arranged at a first period in a second direction crossing a first direction. The first direction is from the first semiconductor region toward the second semiconductor region. A quenching part is electrically connected with the third semiconductor region. Multiple lenses are located respectively on the elements. One of the lenses is positioned on one of the elements. A refracting layer is located between the elements and the lenses. The refracting layer has a first thickness.

Light detector, light detection system, lidar device, mobile body, and vehicle

An imaging device according to an embodiment of the present disclosure includes a pixel array including a plurality of pixels, a scanning control section that controls scanning of the plurality of pixels, and a readout control section that controls reading of the plurality of pixels. The imaging device further includes a first waveform generation part that generates a plurality of control signals for controlling of at least one of the scanning control section or the readout control section, a second waveform generation part that generates a plurality of reference signals, and a failure detection section that detects a failure of the first waveform generation part or the second waveform generation part on a basis of comparison between the plurality of control signals and the plurality of reference signals.

Imaging device, imaging system, and failure detection method

To obtain an imaging device that can improve temperature detection accuracy. An imaging device of the present disclosure includes a processing unit formed on a first semiconductor substrate and capable of performing predetermined image processing on the basis of image data obtained by an imaging unit, a temperature sensor formed on the first semiconductor substrate and capable of generating a detection signal according to a temperature, and a first pad electrode formed on the first semiconductor substrate and electrically insulated from a circuit formed on the first semiconductor substrate.

Imaging device and calibration method

The molecule detecting apparatus of an embodiment includes a light source, a fluorescent layeremitting different fluorescence depending on the kind of a target moleculecaptured when being irradiated with light from the light source, a photodetectorconfigured to detect fluorescence, and the photodetectoris an array of avalanche photodiodes operating in Geiger mode.

Molecule detecting apparatus

According to one embodiment, a light detector includes an element and a quenching resistance. The element includes a photodiode. The quenching resistance is electrically connected to the element. The quenching resistance includes a semiconductor member and a plurality of first metal members. The plurality of first metal members is electrically connected to the semiconductor member and separated from each other.

In one embodiment, a photo detector includes a plurality of photo detection elements, a plurality of trenches each provided among a plurality of the photo detection elements, and a wiring provided between the two photo detection elements out of the plurality of photo detection elements to electrically connect to the two photo detection elements. The trenches surround the 2&#xb7;m (m is a positive integer) photo detection elements including the two photo detection elements. And the two photo detection elements are lined in a direction orthogonal to an extending direction of the metal layer for electrical connection.

Photo detector, photo detection system, lidar device and vehicle

An imaging device according to the present disclosure includes: an imaging unit configured to perform an imaging operation; a data generator configured to generate first power supply voltage data corresponding to a first power supply voltage; and a flag generation section configured to generate a flag signal for the first power supply voltage by comparing the first power supply voltage data and first reference data. The first power supply voltage is supplied to the imaging unit.

An imaging device according to the present disclosure includes a plurality of pixels each including a first light-receiving element and a second light-receiving element, the plurality of pixels including a first pixel. The imaging device further includes a generating section that generates a first detection value on a basis of a light-receiving result by the first light-receiving element of each of the plurality of pixels, and generates a second detection value on a basis of a light-receiving result by the second light-receiving element of each of the plurality of pixels. The imaging device further includes a diagnosis section that performs a diagnosis processing on a basis of a detection ratio that is a ratio between the first detection value and the second detection value in the first pixel.

Imaging device and diagnosis method

A photodetector according to the present embodiment includes a plurality of light detectors. Each light detector has a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type different from the first conductive type, in which the first semiconductor layer and the second semiconductor layer constitute a PN junction. The photodetector further includes a quench resistor that is optically transmissive and connected to the second semiconductor layer.

Growing community of inventors

Yokohama, Japan

Keita Sasaki