Sumitomo Electric Device Innovations, Inc.

Keita Matsuda

A semiconductor device includes a semiconductor substrate, a semiconductor element formed on the semiconductor substrate, a first insulating film covering the semiconductor element, a second insulating film formed on the first insulating film, and a third insulating film formed on the second insulating film. The first and third insulating films allow less moisture to pass than the second insulating film. A dielectric constant of the second insulating film is lower than dielectric constants of the first and third insulating films. The first insulating film has a first portion that is in contact with a first region of an upper surface of the semiconductor substrate. The third insulating film has a second portion that is in contact with upper and side surfaces of the first portion and a second region of the upper surface. The second region is farther away from the semiconductor element than the first region.

Semiconductor device, monolithic microwave integrated circuit, semiconductor package, and method of manufacturing semiconductor device

A method for manufacturing a semiconductor device includes forming a thermosetting resin film on a first metal layer, forming an opening in the resin film, forming a second metal layer that covers a region from an upper surface of the first metal layer exposed from the opening of the resin film to an upper surface of the resin film, performing heat treatment at a temperature equal to or higher than a temperature at which the resin film is cured after forming the second metal layer, forming a cover film that covers the upper surface of the resin film and a side surface of the second metal layer after performing the heat treatment, and forming a solder on an upper surface of the second metal layer exposed from an opening of the cover film after forming the cover film.

Method for manufacturing semiconductor device

There is provided a method for manufacturing a semiconductor device comprising: forming a first organic insulating layer on a semiconductor region; forming a bump base film including an edge portion contacting with the first organic insulating layer; performing heat treatment of the bump base film; and forming a second organic insulating layer so as to cover the edge portion of the bump base film and the first organic insulating layer around the bump base film while contacting with the first organic insulating layer, the second organic insulating layer being provided with a first opening that exposes a surface of the bump base film.

Method for manufacturing semiconductor device and semiconductor device

A semiconductor device manufacturing method includes forming an organic insulating layer on a semiconductor on which metal wiring is provided, the organic insulating layer having an opening to expose part of the metal wiring, forming a seed metal covering the part of the metal wiring exposed from the opening, and an inside face and an around portion of the opening of the organic insulating layer, forming a mask covering an edge of the seed metal and exposing part of the seed metal formed in the opening, and forming a barrier metal on the seed metal exposed from the mask by electroless plating. The mask includes an organic material or an inorganic dielectric material.

Semiconductor device manufacturing method and semiconductor device

A semiconductor device of the ball grid array (BGA) type, the device having an electrode, and a process of forming the electrode are disclosed. The electrode includes an insulating film, a seed layer on the insulating film, a mound metal on the insulating film and an interconnection on the seed layer. The mound metal surrounds the seed layer without forming any gap therebetween. The interconnection, which is formed by electroless plating, is apart from the insulating film with the mound metal as an extension barrier for the plating.

Electrode for a semiconductor device of a ball grid array (BGA) type

A semiconductor device includes: a foundation layer that is provided on a substrate and is electrically conductive; a nickel layer provided on the foundation layer; and a solder provided on the nickel layer, the nickel layer having a first region on a side of the foundation layer and a second region on a side of the solder, the second region being harder than the first region.

Growing community of inventors

Yokohama, Japan

Keita Matsuda