Kyocera Corporation

Keita Kurosu

Yusuke Miyamichi

Shoei Sato

Satoshi Kitayama

Toshiki Matsuoka

Satoshi Oomae

A photovoltaic module includes a front protective layer, a back protective layer, a plurality of solar cells, and a filler. The front protective layer is transmissive to light and has a first surface and a second surface opposite to the first surface. The back protective layer faces the second surface. The plurality of solar cells are between the second surface and the back protective layer. The filler is between the front protective layer and the plurality of solar cells and covers the plurality of solar cells. The filler includes a material with a chemical structure to generate a free acid. The front protective layer includes a weather-resistance resin. At least a part of the first surface is exposed to a space external to the photovoltaic module.

Photovoltaic module

A solar cell module includes a resin first protective layer being light transmissive, a second protective layer, a solar cell portion, a resin first filler layer, a resin second filler layer, a substrate, and an adhesive layer. The solar cell portion includes solar cell elements between the protective layers. The first filler layer facing the first protective layer covers the solar cell elements. The second filler layer facing the second protective layer covers the solar cell elements. The adhesive layer bonds the second protective layer and the substrate. The first protective layer is softer than the substrate. One or more of the second filler layer, the second protective layer, and the adhesive layer have a higher Young's modulus than the first filler layer.

Solar cell module

A photoelectric conversion device includes a light-absorbing layer including a compound semiconductor capable of photoelectric conversion, the compound semiconductor containing a group Ib element including Cu, a group IIIb element and a group VIb element; and a semiconductor layer on one surface-side of the light-absorbing layer, the semiconductor layer having a plane orientation different from that of the light-absorbing layer, the semiconductor layer containing a group Ib element including Cu, at least one element selected from Cd, Zn and In, and a group VIb element. The photoelectric conversion device includes a region in which Cu content decreases from the light-absorbing layer to the semiconductor layer across a junction interface.

Growing community of inventors

Moriyama, Japan

Keita Kurosu