Jx Nippon Mining Metals Corporation

Jx Metals Corporation

Keita Kawahira

Akira Noda

Ryuichi Hirano

Shunsuke Oka

Provided is an indium phosphide substrate, a semiconductor epitaxial wafer, a method for producing an indium phosphide single-crystal ingot and a method for producing indium phosphide substrate capable of suppressing concave defects. An indium phosphide substrate has a diameter of 100 mm or less, and at least one of surfaces has zero concave defects detected in the topography channel, by irradiating a laser beam of 405 nm wavelength with S-polarized light on the surface.

Indium phosphide substrate, semiconductor epitaxial wafer, method for producing indium phosphide single-crystal ingot and method for producing indium phosphide substrate

Provided is a large diameter InP single crystal substrate having a diameter of 75 mm or more, which can achieve a high electrical activation rate of Zn over a main surface of the substrate even in a highly doped region having a Zn concentration of 5&#xd7;10cmor more; and a method for producing the same. An InP single crystal ingot is cooled such that a temperature difference of 200&#xb0; C. is decreased for 2 to 7.5 minutes, while rotating the InP single crystal ingot at a rotation speed of 10 rpm or less, and the cooled InP single crystal ingot is cut into a thin plate, thereby allowing production of the InP single crystal substrate having an electrical activation rate of Zn of more than 85% over the main surface of the substrate even in a highly doped region having a Zn concentration of 5&#xd7;10cmor more.

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Kitaibaraki, Japan

Keita Kawahira