Fujifilm Corporation

Samsung Electronics Co., Ltd.

Keita Kato

Kaoru Iwato

Michihiro Shirakawa

Sou Kamimura

Akiyoshi Goto

Yuichiro Enomoto

Masafumi Kojima

Shinji Tarutani

Kana Fujii

Hidenori Takahashi

Atsushi Nakamura

Shohei Kataoka

Keiyu Ou

Tadahiro Odani

Kazuyoshi Mizutani

Akinori Shibuya

Toru Tsuchihashi

Kyohei Sakita

Kei Yamamoto

Takashi Kawashima

Mitsuhiro Fujita

Fumihiro Yoshino

Akira Takada

Ryosuke Ueba

Shoichi Saitoh

Daisuke Asakawa

Hiroo Takizawa

Tomotaka Tsuchimura

Dong-jun Lee

Shuji Hirano

Shuhei Yamaguchi

Yool Kang

Tsukasa Yamanaka

Jae-ho Kim

Takeshi Kawabata

Naohiro Tango

Ryo Nishio

Takumi Tanaka

Naoya Hatakeyama

Hyung-rae Lee

Si-Young Lee

Hironori Oka

Naoya Iguchi

Yasuharu Shiraishi

Yasufumi Oishi

Keishi Yamamoto

Suk-Koo Hong

Aina Ushiyama

An actinic ray-sensitive or radiation-sensitive resin composition includes a resin X including a repeating unit derived from a compound including two or more structural moieties consisting of an anionic moiety and a cationic moiety, and a polymerizable group, in which the compound generates an acid including an acidic moiety derived from the anionic moiety in the two or more structural moieties by irradiation with actinic rays or radiation.

Active-light-sensitive or radiation-sensitive resin composition, resist film, pattern formation method, method for manufacturing electronic device, compound, and resin

An actinic ray-sensitive or radiation-sensitive resin composition includes a resin including a repeating unit represented by Formula (1) and capable of increasing a polarity by an action of an acid.

Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, method for manufacturing electronic device, and resin

The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition with which a pattern having an excellent pattern collapse suppressing property and excellent LWR performance can be obtained. In addition, the present invention also provides a resist film, a pattern forming method, and a method for manufacturing an electronic device, each regarding the actinic ray-sensitive or radiation-sensitive resin composition. The actinic ray-sensitive or radiation-sensitive resin composition of the present invention includes a resin whose solubility in a developer is changed by the action of an acid, a photoacid generator represented by General Formula (b1), and a solvent, in which the photoacid generator represented by General Formula (b1) is a compound that generates an acid having a pka of 1.0 or less upon irradiation with actinic rays or radiation

Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device

An actinic ray-sensitive or radiation-sensitive resin composition contains a resin having an acid-decomposable group whose polarity increases through decomposition by the action of an acid, an acid generator A capable of generating a first acid upon irradiation with actinic rays or radiation, and an acid generator B capable of generating a second acid upon irradiation with actinic rays or radiation, and the first acid and the second acid satisfy predetermined requirements.

Provided are an actinic ray-sensitive or radiation-sensitive resin composition which contains (A) a photoacid generator that generates an acid having a pKa of &#x2212;1.40 or more upon irradiation with actinic rays or radiation, and (B) a resin having a repeating unit containing an acid-decomposable group, in which an Eth sensitivity of the repeating unit containing an acid-decomposable group is 5.64 or less, and which can provide very excellent roughness performance, exposure latitude, and depth of focus, particularly, in the formation of an ultrafine pattern; a photoacid generator; and an actinic ray-sensitive or radiation-sensitive film, a pattern forming method, and a method for manufacturing an electronic device, each using the actinic ray-sensitive or radiation-sensitive resin composition.

Actinic ray-sensitive or radiation sensitive resin composition, actinic raysensitive or radiation-sensitive film, pattern forming method, method for manufacturing electronic device, and photoacid generator

An actinic ray-sensitive or radiation-sensitive resin composition contains a compound represented by General Formula (1). In General Formula (1), X represents a sulfur atom or an iodine atom. m represents 1 or 2, in a case where X is a sulfur atom, m is 2, and in a case where X is an iodine atom, m is 1. R's each independently represent an alkyl group or alkenyl group which may include a heteroatom, an aromatic heterocyclic group, or an aromatic hydrocarbon ring group. Further, in a case where m is 2, two R's may be bonded to each other to form a ring. Rrepresents a divalent linking group. Rrepresents a divalent linking group having no aromatic group. Yrepresents an anionic moiety. The pKa of the compound represented by General Formula (1) as Yis protonated is &#x2212;2.0 to 1.5. 

A method for producing an electronic device includes the pattern forming method, and an actinic ray-sensitive or radiation-sensitive resin composition for organic solvent development. Specifically, provided is a pattern forming method, including a film forming step of forming a film by an actinic ray-sensitive or radiation-sensitive resin composition, an exposure step of irradiating the film, and a development step of developing the film using a developer containing an organic solvent, in which the composition contains a resin containing a repeating unit having an Si atom and a repeating unit having an acid-decomposable group and a compound capable of generating an acid upon irradiation with actinic rays or radiation, the content of Si atoms in the resin is 1.0 to 30 mass %, and the content of the resin in the total solid content of the composition is 20 mass % or more.

Pattern forming method, method for producing electronic device, and actinic ray-sensitive or radiation-sensitive resin composition for organic solvent development

The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition which is capable of forming a pattern having a low LWR and is further suppressed in the collapse of the formed pattern, a resist film, a pattern forming method, and a method for manufacturing an electronic device. The actinic ray-sensitive or radiation-sensitive resin composition of the present invention contains a photoacid generator represented by General Formula (1) or a resin having a residue obtained by removing one hydrogen atom from the photoacid generator represented by General Formula (1). 

An active-light-sensitive or radiation-sensitive resin composition includes a resin (A) and a photoacid generator (B) capable of generating an acid upon irradiation with active light or radiation, in which the active-light-sensitive or radiation-sensitive resin composition contains at least a photoacid generator (B1) represented by the following General Formula (1) and a photoacid generator (B2) other than the photoacid generator (B1) as the photoacid generator (B). 

Active-light-sensitive or radiation-sensitive resin composition, active-light-sensitive or radiation-sensitive film and pattern forming method, each using composition, and method for manufacturing electronic device

A pattern forming, method, includes: (i) forming a film from an actinic ray-sensitive or radiation-sensitive resin composition that contains (A) a compound capable of generating an acid upon irradiation with an actinic ray or radiation and decomposing by an action of an acid to decrease a solubility of the compound (A) for an organic solvent; (ii) exposing the film; and (iii) performing development by using a developer containing an organic solvent.

Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film

Provided is an actinic-ray- or radiation-sensitive resin composition including a resin (A) and any of compounds (B) of general formula (I) below. (In general formula (I), Rf represents a fluorine atom or a monovalent organic group containing at least one fluorine atom; Rrepresents a hydrogen atom or a monovalent substituent containing no fluorine atom; Xrepresents a monovalent organic group having at least two carbon atoms, or a methyl group in which a substituent other than a fluorine atom is optionally introduced, provided that Xmay be bonded to Rto thereby form a ring; and Z represents a moiety that when exposed to actinic rays or radiation, is converted to a sulfonic acid group, an imidic acid group or a methide acid group). 

Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film and method of forming pattern

Provided is a method of forming a pattern, ensuring excellent sensitivity, limiting resolving power, roughness characteristic, exposure latitude (EL), dependence on post-exposure bake (PEB) temperature and focus latitude (depth of focus DOF), and a resist composition for use in the method. The method comprises (A) forming a film from a resist composition comprising a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, which resin thus when acted on by an acid decreases its solubility in a developer containing an organic solvent, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent.

Pattern forming method and resist composition

The present invention has an object to provide an active-light-sensitive or radiation-sensitive resin composition having high DOF and low LWR; a pattern forming method using the composition; and a method for manufacturing an electronic device. The active-light-sensitive or radiation-sensitive resin composition of the present invention includes a resin P and a compound that generates an acid upon irradiation with active light or radiation, in which the resin P has a repeating unit p1 and a repeating unit p2 represented by specific formulae, and the repeating unit p2 does not have a group in which a hydroxy group of a hydroxyadamantyl group is protected with a group that decomposes by the action of an acid to leave.

Active-light-sensitive or radiation-sensitive resin composition, pattern forming method, and method for manufacturing electronic device

Provided are an active-light-sensitive or radiation-sensitive resin composition having high DOF and excellent LWR, a pattern forming method using the composition, and a method for manufacturing an electronic device. The composition is an active-light-sensitive or radiation-sensitive resin composition containing a resin (P), in which the resin (P) includes a repeating unit (a) having a group that decomposes by the action of an acid to generate a polar group, including at least a specific repeating unit (a1) represented by General Formula (1); a repeating unit (b1) having at least one of a lactone structure, a sultone structure, or a carbonate structure; and a repeating unit (b2) having at least one of a lactone structure, a sultone structure, or a carbonate structure, which is different from the repeating unit (b1), the Ohnishi parameter of the repeating unit (b1) is larger than the Ohnishi parameter of the repeating unit (b2), and the difference between both the Ohnishi parameters is 0.85 or more.

Provided are an active-light-sensitive or radiation-sensitive resin composition having high depth of focus and excellent resolving power; a pattern forming method using the composition; and a method for manufacturing an electronic device. The composition is an active-light-sensitive or radiation-sensitive resin composition containing a resin (P), in which the resin (P) includes a repeating unit (a) having an acid-decomposable group and a repeating unit (b) having a lactone structure and the like; the repeating unit (a) includes at least a specific repeating unit (a1) represented by General Formula (1); the content of the repeating units (a1) with respect to all the repeating units of the resin (P) is 35% by mole or more; and the resin (P) does not include any of a specific group represented by General Formula (X1), a specific structure represented by General Formula (X2), a hydroxyadamantyl group, and a hydroxyadamantyl group in which a hydroxy group is protected with a group that decomposes by the action of an acid to leave.

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Shizuoka, Japan

Keita Kato