Tokyo Ohka Kogyo Co., Ltd.

Promerus, Lcc

Keita Ishiduka

Hideo Hada

Akiya Kawaue

Yoshiyuki Utsumi

Takeshi Iwai

Hiroaki Shimizu

Kensuke Matsuzawa

Takehiro Seshimo

Toshikazu Takayama

Kyoko Ohshita

Mitsuru Sato

Tsuyoshi Nakamura

Satoshi Fujimura

Masaaki Yoshida

Taku Hirayama

Jun Iwashita

Kotaro Endo

Toshikazu Tachikawa

Tomotaka Yamada

Ryoichi Takasu

Larry Funderburk Rhodes

Yuichi Suzuki

Pramod Kandanarachchi

Fumitake Kaneko

Yasuhiro Yoshii

Tomoyuki Ando

Chun S Chang

Komei Hirahara

Lawrence D Seger

Yoshitaka Komuro

Masaru Takeshita

Shigeru Yokoi

Tomoyuki Tokyo Ohka Kogyo Co Ltd Ando

Kotaro Tokyo Ohka Kogyo Coltd Endo

A resist composition including a base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon exposure, the acid-generator including an acid generator consisting of a compound represented by general formula (b1-1) shown below: In which Rrepresents a hydrocarbon group which may have a substituent exclusive of a nitrogen atom; each of Qand Qindependently represents a single bond or a divalent linkage group; Yrepresents an alkylene group or fluorinated alkyl group of 1 to 4 carbon atoms; and Zrepresents an organic cation exclusive of an ion represented by general formula (w-1).

Compound and method of producing the same, acid generator, resist composition and method of forming resist pattern

A resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) including an acid generator (B1) consisting of a compound represented by general formula (b1-1) shown below: wherein Rrepresents a hydrocarbon group which may have a substituent exclusive of a nitrogen atom; each of Qand Qindependently represents a single bond or a divalent linkage group; Yrepresents an alkylene group or fluorinated alkyl group of 1 to 4 carbon atoms; and Zrepresents an organic cation exclusive of an ion represented by general formula (w-1).

Disclosed are: a composition for forming a resist protection film, which shows less damage to a resist film, can form a good, rectangular resist pattern, and can be used regardless of the structure of a resin used in a resist composition; and a method for forming a resist pattern by using the composition. Specifically, disclosed are: a composition for forming a resist protection film, which comprises (a) an alkali-soluble polymer and (b) an ether-based solvent; and a method for forming a resist pattern by using the composition.

Composition for formation of resist protection film, and method for formation of resist pattern using the same

A resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) including an acid generator (B1) containing a compound having a cation moiety comprising a group represented by general formula (I) (in the formula, Rrepresents an organic group having a carbonyl group, an ester bond or a sulfonyl group; and Q represents a divalent linking group). 

Resist composition, method of forming resist pattern, novel compound, and acid generator

Embodiments of the present invention relate generally to non-self imagable and imagable norbornene-type polymers useful for immersion lithographic processes, methods of making such polymers, compositions employing such polymers and the immersion lithographic processes that make use of such compositions. More specifically the embodiments of the present invention are related to norbornene-type polymers useful for forming imaging layer and top-coat layers for overlying such imaging layers in immersion lithographic process and the process thereof.

Norbornene-type polymers, compositions thereof and lithographic processes using such compositions

The formation of high-resolution resist patterns by liquid immersion lithography with various fluids is enabled by protecting a resist film from deterioration (such as bridging) during the immersion exposure in a fluid (such as water) and the fluid from deterioration and improving the stability of a resist film in the storage after exposure without increase in the number of treatment steps. A material for forming resist protection films which comprises an alkali-soluble polymer for forming a protective overcoat for a resist film, characterized in that the contact angle of the polymer to water is 90&#xb0; or above. The polymer is preferably an acrylic polymer which comprises as the essential components constituent units derived from (meth) acrylic acid and constituent units derived from a specific acrylic ester.

Material for forming resist protection films and method for resist pattern formation with the same

A resist composition including a base component (A) that exhibits changed solubility in an alkali developing solution under the action of acid, and an acid generator component (B) that generates acid upon exposure, wherein the acid generator component (B) includes an acid generator (B1) consisting of a compound represented by general formula (b1-2) shown below:

Compound and method of producing same, acid generator, resist composition, and method of forming resist pattern

A resist composition including a base component that exhibits changed solubility in an alkali developing solution under the action of acid, and an acid generator consisting of a compound represented by general formula (b1). In formula (b1), Yrepresents a fluorinated alkylene group of 1 to 4 carbon atoms, X represents an aliphatic cyclic group of 3 to 30 carbon atoms, R' to R&#x2032; each represents an aryl group or alkyl group, provided that at least one of R&#x2032; to R&#x2032; is an aryl group having a substituent represented by general formula (b1-0), and two alkyl groups among R&#x2032; to R&#x2032; may be bonded to each other to form a ring with the sulfur atom in the formula. In formula (b1-0), Rrepresents a chain-like or cyclic hydrocarbon group, and f and g each represents 0 or 1. 

Resist composition, method of forming resist pattern, and novel compound and acid generator

A positive resist composition including a resin component (A) having a structural unit (a0) represented by general formula (a0-1) (R represents a hydrogen atom, a C-Calkyl group or a C-Chalogenated alkyl group; Rrepresents a Cor more branched alkyl group; and each of Rand Rindependently represents an alkyl group, wherein Rand Rmay be mutually bonded to form a polycyclic group) and/or general formula (a0-2) (R is the same as defined above; Rrepresents a divalent linking group that contains no halogen atom; and Rrepresents an acid dissociable, dissolution inhibiting group), and an acid generator (B1) consisting of a compound represented by general formula (b1) (Yrepresents a C-Cfluorinated alkylene group which may have a substituent; X represents a C-Caliphatic cyclic group which may have a substituent; and Arepresents an organic cation). 

Positive resist composition and method of forming resist pattern

A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.

Resist composition

Disclosed are: a material for forming a protective film to be laminated on a photoresist film, which can prevent the contamination of an exposing device with an outgas generated from the photoresist film, which has little influence on the environment, which has a high water repellent property, which sparingly causes mixing with the photoresist film, and which can form a high-resolution photoresist pattern; a method for forming a photoresist pattern; and a solution for washing/removing a protective film. Specifically disclosed are: a material for forming a protective film, which comprises (a) a non-polar polymer and (b) a non-polar solvent; a method for forming a photoresist pattern by using the material; and a solution for washing/removing a protective film, which is intended to be used in the method.

Material for formation of protective film, method for formation of photoresist pattern, and solution for washing/removal of protective film

There are provided a compound represented by a general formula (b1-1) shown below suitable as an acid generator for a resist composition, a compound represented by a general formula (I) shown below suitable as a precursor for the compound represented by the general formula (b1-1), an acid generator, a resist composition, and a method of forming a resist pattern. [Chemical Formula 1]X&#x2014;Q&#x2014;Y&#x2014;SOM&#x2003;&#x2003;(I)X&#x2014;Q&#x2014;Y&#x2014;SOA&#x2003;&#x2003;(b1-1)(wherein, Qrepresents a bivalent linking group or a single bond; Yrepresents an alkylene group which may contain a substituent group or a fluorinated alkylene group which may contain a substituent group; X represents an aromatic cyclic group of 5 to 30 carbon atoms which contains a fluorine atom and may contain a substituent group; Mrepresents an alkali metal ion; and Arepresents an organic cation.).

Compound, acid generator, resist composition and method of forming resist pattern

Embodiments of the present invention relate generally to non-self imageable and imageable norbornene-type polymers useful for immersion lithographic processes, methods of making such polymers, compositions employing such polymers and the immersion lithographic processes that make use of such compositions. More specifically the embodiments of the present invention are related to norbornene-type polymers useful for forming imaging layer and top-coat layers for overlying such imaging layers in immersion lithographic process and the process thereof.

Norbornene-type polymers, compositions thereof and lithographic process using such compositions

A compound represented by general formula (b-14); and acid generator consisting of the compound; and a resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) including an acid generator (B1) consisting of a compound represented by general formula (b1-14): wherein R&#x2033; to R&#x2033; each independently represents an aryl group or an alkyl group, wherein two of R&#x2033; to R&#x2033; may be bonded to each other to form a ring with the sulfur atom, and at least one of R&#x2033; to R&#x2033; represents a substituted aryl group in which a portion or all of the hydrogen atoms are substituted with an alkoxyalkyloxy group or an alkoxycarbonylalkyloxy group; and Xrepresents an anion.

Resist composition, method of forming resist pattern, compound and acid generator

There are provided a novel compound represented by a general formula (b1-1) shown below, which is useful as an acid generator for a resist composition and a manufacturing method thereof, a compound useful as a precursor of the novel compound and a manufacturing method thereof, an acid generator, a resist composition and a method of forming a resist pattern. (wherein, Rrepresents an aryl group or alkyl group which may contain a substituent group; Rrepresents a hydrogen atom or an alkyl group; n1 represents an integer of 0 or 1, and in the case that n1 is 1, Rand Rmay mutually be bonded to form a ring with a 3- to 7-membered ring structure together with the carbon atom with which Ris bonded and the carbon atom with which Ris bonded; A represents a bivalent group which forms a ring with 3- to 7-membered ring structure together with the sulfur atom with which A is bonded, and the ring may contain a substituent group; Rrepresents an aromatic group which may contain a substituent group, a linear or branched alkyl group of 1 to 10 carbon atoms which may contain a substituent group, or a linear or branched alkenyl group of 2 to 10 carbon atoms which may contain a substituent group; n represents an integer of 0 or 1; and Yrepresents an alkylene group of 1 to 4 carbon atoms in which hydrogen atoms may be substituted with fluorine atoms.).

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Kawasaki, Japan

Keita Ishiduka