Kokusai Electric Corporation

Keita Ichimura

Yukinori Aburatani

Naofumi Ohashi

Tadashi Takasaki

Shun Matsui

Takashi Yahata

Masanori Nakayama

Yasutoshi Tsubota

Tatsushi Ueda

Katsunori Funaki

Hiroto Igawa

Yuichiro Takeshima

Yuki Yamakado

Eiko Takami

Described herein is a technique capable of preventing a constituent contained in an aluminum alloy from being vaporized and scattered when the aluminum alloy is used in a process vessel which is heated to a high temperature. According to one aspect thereof, there is provided a technique including a process chamber; a substrate support configured to support a substrate in the process chamber; and a heater configured to heat the substrate supported by the substrate support, wherein the substrate support is made of an aluminum alloy containing magnesium, and a surface of the substrate support is coated by a coating film of aluminum oxide containing magnesium oxide and being substantially free of magnesium.

Substrate processing apparatus, method of manufacturing semiconductor device and method of processing substrate support

A method of manufacturing a semiconductor device includes accommodating a substrate in a process chamber; supplying a first gas containing oxygen into the process chamber; generating plasma in the process chamber by exciting the first gas; supplying a second gas containing hydrogen into the process chamber and adjusting a hydrogen concentration distribution in the process chamber according to a density distribution of the plasma in the process chamber; and processing the substrate with oxidizing species generated by the plasma.

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a technique that includes (a) performing a heating process on a substrate in a process chamber, (b) transferring the substrate between the process chamber and a load lock chamber connected to a vacuum transfer chamber by a transfer robot installed in the vacuum transfer chamber connected to the process chamber, and (c) reading transfer information corresponding to process information applied to the substrate from a memory device in which plural pieces of the process information on a process content of the substrate and plural pieces of the transfer information of the transfer robot corresponding to the plural pieces of the process information are recorded, and controlling the transfer robot to transfer the substrate based on the read transfer information.

Method of manufacturing semiconductor device

Growing community of inventors

Toyama, Japan

Keita Ichimura