Fuji Electric Holdings Co., Ltd.

Fuji Electric Co., Ltd.

Keisuke Yamashiro

Haruo Kawakami

Hisato Kato

Masami Kuroda

Nobuyuki Sekine

Kyoko Kato

Hiromu Takubo

A method of manufacturing a laminated substrate including an insulation substrate comprised of ceramic, and a front electrode formed on a front surface of the insulation substrate, a semiconductor element being mountable on a front surface of the front electrode, including forming the front electrode on the front surface of the insulation substrate, and before or after the forming the front electrode, applying laser processing to the front surface of the insulation substrate at an outer peripheral area of the front electrode to modify a conductive property of the front surface of the insulation substrate to have electrical conductivity.

Method of producing laminated substrate, method of producing semiconductor module, laminated substrate, and semiconductor module

A gate driving circuit and method can improve the tradeoff relation between the noise and the loss caused in the turn-OFF switching of semiconductor device. The gate driving circuit includes first and second series circuits. The first series circuit includes first and second MOSFETs connected in series. The gate terminal of the semiconductor device is connected to a negative potential side of the first MOSFET and a positive potential side of the second MOSFET. The emitter of the semiconductor device is connected to the negative potential side of the second MOSFET or a DC power source. The second series circuit includes a capacitor and a third MOSFET connected in series. The second series circuit is connected in parallel with the second MOSFET. The semiconductor device is turned OFF by turning ON the second and third MOSFETs and turning OFF the first MOSFET.

Gate driving circuit and method for driving semiconductor device

A switching element with bistable characteristics which has switching characteristics stabilized by raising transition probability. The switching element has an organic bistable material layer between at least two electrodes. The organic bistable material layer contains an organic bistable compound having two stable resistance values to an applied voltage, wherein the switching element has thin films of a first electrode layer, a metal microparticle-containing layer, the organic bistable material layer, and a second electrode layer, formed on a substrate in this order, and the metal microparticle-containing layer contains metal microparticle and the organic bistable compound.

Switching element

The present invention provides a switching element that has a stable bistable characteristic and a high transition voltage and demonstrates excellent cyclic performance. The switching element has two stable resistance values with respect to the voltage applied between electrodes, wherein a first electrode layer, an organic bistable material layer, and a second electrode layer are successively formed as thin films on a substrate and the organic bistable material constituting the organic bistable material layer is a quinomethane-based compound or a monoquinomethane-based compound. A metal constituting the second electrode layer is diffused into the organic bistable material layer. It is preferred that the second electrode layer be formed by vapor deposition and the temperature of the substrate during the vapor deposition be 30-150&#xb0; C.

A switching device is discloses that exhibits two stable resistance values to a voltage applied between electrodes. The switching device comprises thin films of a first electrode layer, an organic bistable material layer and a second electrode layer sequentially formed on a substrate, and the organic bistable material is a specified quinone compound.

Switching device

A switching device in which an organic bistable material layer containing an organic bistable compound having two types of stable resistance against an applied voltage is provided between at least two electrodes. In the switching device, a first electrode layer, an electric charge injection suppressing layer, an organic bistable material layer and a second electrode layer are sequentially formed on a substrate as respective thin films, in which the electric charge injection suppressing layer contains an electrically conductive layer which allows an electric charge injection amount from the first electrode layer to the organic bistable material layer to be small compared with that in a case in which the electric charge is directly injected from the first electrode layer to the organic bistable material layer without providing the electric charge injection suppressing layer.

Growing community of inventors

Tokyo, Japan

Keisuke Yamashiro