The Japan Steel Works, Ltd.

Keisuke Washio

Tatsuya Matsumoto

Masao Nakata

Junichi Shida

Masaki Chiba

Takashi Ebisawa

Masamitsu Toramaru

In a film-forming technology using charged particles, a disturbance in film thickness distribution caused by leakage magnetic field is suppressed. A film-forming method embodies a technological idea of switching generation and stop of a magnetic field during a film-forming operation so as to stop the generation of the magnetic field during a period when plasma is generated and generate the magnetic field during a period when plasma is not generated.

Film-forming method, manufacturing method of electronic device, and plasma atomic layer deposition apparatus

An atomic layer deposition apparatus includes a film-forming containerin which a film-forming process is performed, a vertically movable stageconfigured to hold a substrate, a susceptorheld on the stageand being configured to hold the substrate, and a stage stopperconfigured to stop rising of the stageand, when in contact with the susceptor, partitioning a film-forming space S in which the film-forming process is performed and a transporting space in which transport of the substrateis performed. Further, the susceptorincludes an upper susceptor substrate holding portionB configured to hold the substrate, and an upper susceptor peripheral portionA arranged in a periphery of the upper susceptor substrate holding portionB, wherein a susceptor deposition prevention memberis provided on the upper susceptor peripheral portionA.

Atomic layer deposition apparatus and atomic layer deposition method

A plasma atomic layer deposition apparatus includes: a source gas supply port functioning also as a cleaning gas supply port provided on a first side wall of a film-forming container; and a source gas exhaust port functioning also as a cleaning gas exhaust port provided on a second side wall opposed to the first side wall of the film-forming container.

Atomic layer deposition apparatus, film-forming method using atomic layer deposition apparatus, and cleaning method of atomic layer deposition apparatus

A method of manufacturing a display device having an organic EL device includes the steps of: forming an organic EL device over a substrate; and forming a protection film so as to cover the organic EL device. The protection film is made of a laminated film of a first insulating film containing Si, a second insulating film containing Al and a third insulating film containing Si. The step of forming the protection film includes the steps of: forming the first insulating film by a plasma CVD method so as to cover the organic EL device; forming the second insulating film over the first insulating film by an ALD method; and forming the third insulating film over the second insulating film by a plasma CVD method.

Method of forming protection film for organic EL device, method of manufacturing display device and display device

A film quality of a film formed on a substrate is improved. A plasma atomic layer deposition apparatus has a lower electrode holding the substrate, and an upper electrode having an opposite surface opposed to the lower electrode and generating plasma discharge between the upper electrode and the lower electrode. Further, the plasma atomic layer deposition apparatus has a conductive deposition preventing member fixed to the opposite surface of the upper electrode by a plurality of screws, and other conductive deposition preventing member fixed to the conductive deposition preventing member by a plurality of others screws. At this time, in a plan view, the plurality of screws and the plurality of other screws are arranged so as not to overlap each other.

Atomic layer deposition apparatus

In order to suppress a film from being formed in a gap between a mask and a substrate, a technology of improving adhesion between the mask and the substrate is provided. A film-forming method includes the step of suspending a mask MK by a suspension portion HU in a state in which the suspension portion HU is supported by a supporting portion SU and the step of bringing the mask MK suspended by the suspension portion HU into contact with a glass substrate GS in the state in which the suspension portion HU is supported by the supporting portion SU.

Film-forming method, manufacturing method of electronic device, and mask holder

An atomic layer deposition apparatus includes: a film-forming containerin which a film-forming process is performed; a vertically movable stageprovided in the film-forming containerand being configured to hold a substrate; a stage stopperconfigured to stop rising of the stageand, when in contact with the stage, partitioning a film-forming space S in which the film-forming process is performed and a transporting space in which transport of the substrateis performed; a peripheral stage deposition prevention membercovering a peripheral portion of the stage; and a stage stopper deposition prevention memberprovided on the stage stopper

A method of manufacturing a display apparatus having an organic EL element includes: a step of forming the organic EL element over a substrate made of a flexible substrate; and a step of forming a protecting filmmade of an inorganic insulating material so as to cover the organic EL element by using an ALD method. In the step of forming the protecting film, the protecting filmis formed by alternately performing a step of forming a high-density layerH by using an ALD method and a step of forming, by using an ALD method, a low-density layerL that has the same constituent element as the high-density layerH and has a lower density than the high-density layerH. The protecting filmhas a layered structure made of one or more high-density layersH and one or more low-density layersL so that the low-density layerL and the high-density layerH are alternately layered so as to be in contact with each other.

Display apparatus and method of manufacturing the same

A device for atomic layer deposition includes: a film deposition chamber; a stage installed inside the film deposition chamber; a susceptor that holds, on the stage, a substrate; a mask disposed on the substrate, the mask being sized to encompass the substrate; a mask pin that supports the mask; and a mask pin hole bored through the stage and the susceptor vertically, and allows the mask pin to be inserted in a vertically movable manner, wherein the susceptor has a susceptor body having a holding surface of the substrate, and a susceptor peripheral edge located around the susceptor body and having a height lower than the holding surface, the mask pin hole is opened in the susceptor peripheral edge, and in the susceptor peripheral edge, an inert gas supply port that releases gas upward is provided around the holding surface in a surrounding area of the mask.

Device for atomic layer deposition

An apparatus for atomic layer deposition includes a film deposition chamber, a tubular exhaust pipe connecting section mounted to an outer side of an opening section provided in the film deposition chamber, and a tubular exhaust adhesion preventive member located inside the film deposition chamber and inserted into and mounted on the opening section. The exhaust pipe connecting section is provided with an inert-gas supply passage and an inert-gas supply port, both in the connecting section. The exhaust adhesion preventive member is provided with an inert-gas supply passage formed of a gap between each of an inner peripheral surface of the opening section and an inner wall of the film deposition chamber around the opening section, and the adhesion preventive member, and an inert-gas discharge port provided in the inert-gas supply passage, and from which the inert gas flows out into the film deposition chamber.

Apparatus for atomic layer deposition and exhaust unit for apparatus for atomic layer deposition

An apparatus for plasma atomic layer deposition includes a tubular, insulating injector adhesion preventive member mountable to a gas-introducing opening section from inside a film forming chamber, a tubular, insulating exhaust adhesion preventive member mountable to an exhaust opening section from inside the film forming chamber, and an insulating film forming chamber adhesion preventive member mountable to an inner wall side of the film forming chamber. The injector adhesion preventive member and the exhaust adhesion preventive member are separated from each of a plate electrode and a counter electrode side, and the film forming chamber adhesion preventive member is disposed on each side of the injector adhesion preventive member and the exhaust adhesion preventive member to be separated from each of the plate electrode and the counter electrode side. The apparatus further includes an upper and lower inert-gas supply port that purges inert gas toward inside the film forming chamber.

Apparatus for plasma atomic layer deposition

A device for atomic layer deposition includes: an injector installed to an opening of a film deposition chamber; and an injector adhesion preventive member installed by insertion into the opening, wherein the injector includes an injector raw material gas supply path, an injector reactant gas supply path, and an injector inert gas supply path, the respective paths being partitioned from each other, the injector adhesion preventive member includes an adhesion preventive member raw material gas supply path, an adhesion preventive member reactant gas supply path, and an adhesion preventive member inert gas supply path, the respective paths being partitioned from each other, and the adhesion preventive member inert gas supply path is provided such that the inert gas flows in a clearance between an outer peripheral side of the injector adhesion preventive member and an inner peripheral side of the opening.

Growing community of inventors

Kanagawa, Japan

Keisuke Washio