Matsushita Electric Industrial Co., Ltd.

Nippon Sheet Glass Company, Limited

Panasonic Corporation

Matsushita Electronics Corporation

Other

Panasonic Intellectual Property Management Co., Ltd.

Matsushita Electric Ind. Co., Ltd.

Keisuke Tanaka

Toru Nasu

Yoshihisa Nagano

Kiminari Sugiura

Hideo Kaiya

Kiyoshi Uchiyama

Sumihito Ishida

Toshihiko Maruoka

Shigeki Obana

Takumi Mikawa

Yoshio Moriwaki

Akihiro Matsuda

Toshie Kutsunai

Shigeru Saitou

Toyoji Ito

Yasufumi Izutsu

Keisaku Nakao

Yasuhiro Shimada

Carlos Alberto Paz De Araujo

Yutaka Hirose

Takumi Yamaguchi

Shinichiro Hayashi

Motonori Ishii

Masamichi Azuma

Kazutoshi Onozawa

Mitsuyoshi Mori

Kenji Murata

Katsumi Kozu

Shoichiro Watanabe

Kimiaki Toshikiyo

Manabu Usuda

Takuma Katayama

Takahiro Ochi

Satoru Kotani

Shigeo Aoki

Motohide Masui

Kazutoshi Okubo

Koichi Inoue

Junji Fujiwara

Takashi Takemura

Yoshinori Koyanagi

Masanobu Kuboshima

Toshiaki Kitazoe

Kohei Kitagawa

Tomoya Watanabe

A solid-state imaging device includes: unit pixels each having a light-receiving element which is divided into line widths shorter than or equal to a wavelength of light; a plurality of light-transmissive films in a concentric structure; and an effective refractive index distribution. Among the light-transmissive films, a light-transmissive film closest to a center of the concentric structure has an outer edge in a shape of a true circle, and a light-transmissive film far from the center of the concentric structure has an outer edge in a shape of an oval, a ratio of a long axis to a short axis of the oval increases as the light-transmissive film is farther away from the center of the concentric structure, and a direction of the long axis of the oval is orthogonal to a vector which connects the center of the concentric structure and a center of the solid-state imaging device.

Solid-state imaging device and imaging apparatus

A solid-state image sensor having a configuration which reduces increases in light-collection loss and light mixing due to an increase in the angle of light entering into a waveguide path during oblique incidence and which is effective for sensitivity improvement includes: an Si substrate; unit-pixels arranged on the Si substrate; a wiring layer formed on the unit-pixels; optical waveguide regions each formed on a photoelectric conversion region included in a corresponding one of the unit-pixels, and penetrating the wiring layer; and light-collecting elements each formed above a corresponding one of the optical waveguide regions, wherein each of the light-collecting elements is a gradient index microlens having an effective refractive index distribution.

Solid-state image sensor

A first semiconductor chip includes a fixed electrode formed on a first semiconductor substrate and a plurality of first metal spacers formed on a first interlayer dielectric. A second semiconductor chip includes a vibrating electrode formed on a second semiconductor substrate and a plurality of second metal spacers formed on a second interlayer dielectric. The first and second semiconductor chips are metallically bonded to each other using the first and second metal spacers. An air gap is formed in a region of the condenser microphone located between the first semiconductor chip and the second semiconductor chip except bonded regions of the first and second metal spacers.

Method for fabricating condenser microphone and condenser microphone

A non-aqueous electrolyte secondary battery comprising: a positive electrode plate including an outer jacket comprising a sheet-shaped positive electrode current collector and a positive electrode active material layer formed on an inner surface of the outer jacket except for a peripheral portion thereof; a negative electrode plate including an outer jacket comprising a sheet-shaped negative electrode current collector and a negative electrode active material layer formed on an inner surface of the outer jacket except for a peripheral portion thereof; a separator layer comprising a polymer electrolyte interposed between the positive electrode active material layer and the negative electrode active material layer, wherein the peripheral portion of the positive electrode current collector and the peripheral portion of the negative electrode current collector are bonded together, with an insulating material interposed therebetween.

Method for producing non-aqueous electrolyte secondary battery

Disclosed is a non-aqueous electrolyte battery comprising: a flat outer jacket comprising a metal sheet and having two primary flat portions facing each other; two active material layers of a first polarity respectively carried on inner surfaces of the flat portions; an electrode plate of a second polarity disposed in a position facing with each of the active material layers; and a separator layer interposed between each of the active material layers and the electrode plate of a second polarity, with the outer jacket serving as a current collector of the active material layers.

Non-aqueous electrolyte battery

This invention provides an on-screen display device that can display an increased number of types of characters without enlarging the video RAM area. This on-screen display device includes a character generator ROM that has n (n is an integer that is equal to or larger than 3) areas, a flag holding unit that outputs an area designation flag for designating a desired number of desired areas among the n areas in the character generator ROM, a display character setting unit that writes a desired character code at a predetermined position in a video RAM, and a display control unit that reads the character code from the video RAM, reads font data corresponding to the read character code from an area in the character generator ROM, which is indicated by the area designation flag outputted from the flag holding unit, and outputs an on-screen output signal using the font data.

On-screen display device

Non-aqueous electrolyte secondary battery assembly

An on-screen display device that can effectively utilize a video RAM area. This on-screen display device includes a video RAM that holds character data of desired characters that are to be displayed; a display character setting unit for locating the number of bits as many as the remainder that is obtained by dividing character data corresponding to one character by the number of bits that can be read at one-time access from the video RAM, collectively by one line in the video RAM; buffers for storing a part of character data of the respective characters; a character generator ROM for outputting font data corresponding to the character codes; and a display control unit for reading character data from the video RAM via the buffers at the display of the characters, and reading the font data that are created by the character generator ROM, thereby outputting an on-screen output signal.

A battery power source device including a plurality of rechargeable batteries ( ) having a laminated sheet as an outer case, and having extended positive and negative electrode leads of a metal foil is provided. A circuit board ( ) and a plurality of rechargeable batteries are positioned in a pack case ( ), a soldering land ( ) is formed in the extending direction of the positive and negative electrode leads ( ) and ( ) of the rechargeable batteries, and a circuit pattern formed on the circuit board allows the circuit board and the rechargeable batteries to be connected without applying force in the bending or distortional direction to the positive and negative electrode leads of a foil.

Battery power source device including rechargeable battery and circuit board joined thereto

The semiconductor device of the invention includes a capacitor device, which is formed on a substrate and which includes a capacitive lower electrode, a capacitive insulating film made of an insulating metal oxide film and a capacitive upper electrode. An interlevel insulating film having an opening reaching the capacitive upper electrode is formed over the capacitor device. A metal interconnection including a titanium film is formed over the interlevel insulating film so as to be electrically connected to the capacitive upper electrode through the opening. An anti-diffusion film having conductivity is formed between the capacitive upper electrode and the metal interconnection for preventing titanium atoms composing the titanium film of the metal interconnection from passing through the capacitive upper electrode and diffusing into the capacitive insulating film.

Semiconductor device and method for fabricating the same

The ferroelectric film of the invention is made from a ferroelectric material represented by a general formula, Bi A Ti O or (Bi A Ti O ) &plus;(DBi E O ) , wherein A is an element selected from the group consisting of La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and V; D is an element selected from the group consisting of Sr, Ba, Ca, Bi, Cd, Pb and La; E is an element selected from the group consisting of Ti, Ta, Hf, W, Nb, Zr and Cr; and 0&lE;x&lE;2, 0<y&lE;(4&minus;x)&times;0.1 and 0.5<z<1.

Ferroelectric film and semiconductor device

A ferroelectric integrated circuit including a substrate supporting a thin film ferroelectric material and an electrode layer in contact with the ferroelectric material, the ferroelectric material comprising a compound including a metal element, the electrode comprising the metal element. The metal element of the ferroelectric material may exist in the electrode in the pure metal form, as an alloy, as part of a crystalline compound, or as part of an amorphous material. The electrodes may be formed by a single layer, or as multi-layer structures, providing the layer adjacent the ferroelectric contains at least one of the metal elements of the ferroelectric. The electrode is formed at the eutectic temperature of its constants.

Electrodes for ferroelectric components

A reset circuit of a semiconductor circuit for reliably resetting plural reset target circuits in the semiconductor circuit, even when a surge noise signal having a short pulse length or the like is input to the reset circuit, the reset circuit including a reset signal control circuit for controlling timing of deactivating a reset instruction signal for resetting plural reset target circuits in the semiconductor circuit. Respective reset target circuits are for outputting reset completion signals to the reset signal control circuit when the respective reset target circuits have been reset. The reset signal control circuit also is for deactivating the reset instruction signal when all of the reset completion signals have been activated.

Reset circuit of semiconductor circuit

The present invention relates to a method for imparting hydrophilicity to a substrate whereby high hydrophilic properties and water-holding properties can be maintained for a long period of time. According to the present invention, an SiO film is formed directly or through an undercoat layer on a substrate under a reduced pressure of 100 Pa or less and immediately after the SiO film is formed, the SiO film is treated with water. Before forming the SiO film, it is also desirable that an undercoat layer consisting of a TiO film, Al O film, Nb O film, a laminated film prepared by laminating the TiO film on the Al O film, a laminated film prepared by laminating the TiO film on the Nb O film, or a low emissivity film be formed on a substrate and the SiO film be then formed on the undercoat film to serve as an SiO composite film.

Method for imparting hydrophilicity to substrate

A liquid precursor for forming a layered superlattice material is applied to an integrated circuit substrate. The precursor coating is annealed in oxygen using a rapid temperature pulsing anneal (&ldquo;RPA&rdquo;) technique with a ramp rate of 30&deg; C./second at a hold temperature of 650&deg; C. for a holding time of 30 minutes. The RPA technique includes applying a plurality of rapid-temperature heat pulses in sequence.

Rapid-temperature pulsing anneal method at low temperature for fabricating layered superlattice materials and making electronic devices including same

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Kyoto, Japan

Keisuke Tanaka