Nissan Motor Company Limited

Renault S.a.s.

Keisuke Takemoto

Tetsuya Hayashi

Wei Ni

Toshiharu Marui

Ryota Tanaka

Keiichiro Numakura

Shigeharu Yamagami

Yusuke Zushi

Yuji Saito

Yosuke Tomita

Yasuaki Hayami

Ryouta Tanaka

A semiconductor device includes: a substrate having a groove formed on a main surface; a drift region of a first conductivity type, the drift region having a portion disposed at a bottom part; a well region of a second conductivity type, the well region being disposed in one sidewall to be connected to the drift region; a first semiconductor region of the first conductivity type, the first semiconductor region being disposed on a surface of the well region in the sidewall to be away from the drift region; a second semiconductor region of the first conductivity type, the second semiconductor region being disposed to be opposed to the well region via the drift region; and a gate electrode opposed to the well region, the gate electrode being disposed in a gate trench that has an opening extending over the upper surfaces of the well region and the first semiconductor region.

Semiconductor device and method for manufacturing same

A semiconductor device includes a semiconductor base body, and a first main electrode and a second main electrode provided on the semiconductor base body. The semiconductor base body includes a drift region of a first conductivity type through which a main current flows, a column region of a second conductivity type arranged adjacent to the drift region in parallel to a current passage of the main current, a second electrode-connection region of the first conductivity type electrically connected to the second main electrode, and a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region and arranged between the second electrode-connection region and the column region.

Semiconductor device and method of manufacturing semiconductor device

A semiconductor device includes a main groove formed in a main surface of a substrate, a semiconductor region formed in contact with a surface of the main groove, an electron supply region formed in contact with a surface of the semiconductor region on opposite sides of at least side surfaces of the main groove to generate a two-dimensional electron gas layer in the semiconductor region, and a first electrode and a second electrode formed in contact with the two-dimensional electron gas layer and apart from each other.

Semiconductor device

The present disclosure includes a conversion circuit () having a switching element and converting DC voltage into AC voltage by switching operation of the switching element, an isolation transformer () for which an input side is connected to the conversion circuit (), a rectifier circuit () connected to an outside of the isolation transformer (), a resonance circuit connected to the output side of the isolation transformer (), and a control circuit () for controlling the switching element, wherein the control circuit () turning on the switching element in a period when current flowing through resonance circuit flows from a low potential side terminal to a high potential side terminal of the switching element via the isolation transformer ().

Power converting device, and control method for power converting device

A semiconductor device includes: a drift region of a first conductive type including a contact section and extension sections extending along the main surface of a substrate; column regions of a second conductive type which alternate with the extension sections in a perpendicular direction to the extension direction of the extension sections and each includes an end connecting to the contact section; a well region of a second conductive type which connects to the other end of each column region and tips of the extension sections; and electric field relaxing electrodes which are provided above at least some of residual pn junctions with an insulating film interposed therebetween. Herein, the residual pn junctions are pn junctions other than voltage holding pn junctions formed in interfaces between the extension sections and the column regions.

Semiconductor device and manufacturing method thereof

A semiconductor device includes: a substrate (); a semiconductor layer () disposed on a main surface of this substrate (); and a first main electrode () and a second main electrode (), which are disposed on the substrate () separately from each other with the semiconductor layer () sandwiched therebetween and are individually end portions of a current path of a main current flowing in an on-state. The semiconductor layer () includes: a first conductivity-type drift region () through which a main current flows; a second conductivity-type column region () that is disposed inside the drift region () and extends in parallel to a current path; and an electric field relaxation region () that is disposed in at least a part between the drift region () and the column region () and is either a low-concentration region in which an impurity concentration is lower than in the same conductivity-type adjacent region or a non-doped region.

Semiconductor device and method for manufacturing the same

The present invention is related to a control method for controlling a power converter including a first power conversion circuitand a second power conversion circuitby using a control circuit. The first power conversion circuitis connected to a solar cell moduleand a capacitor, converts output power of the solar cell module, and outputs the converted power to the capacitor, the second power conversion circuitis connected to the capacitor, and converts a voltage at a connection terminal connected to the capacitor. The control method comprises step of controlling operation of the second power conversion circuitbased on the output voltage of the solar cell module, to use output power of the second power conversion circuitfor charging the capacitor

Method for controlling power conversion device, and power conversion device

A semiconductor device includes: a substrate; a drift region disposed on a principal surface of the substrate; a first well region extending from a second principal surface of the drift region in a direction perpendicular to the second principal surface and having a bottom portion; a second well region being in contact with the bottom portion and disposed at a portion inside the substrate located below the bottom portion; and a source region extending in a perpendicular direction from a region of the second principal surface provided with the first well region, and reaching the second well region. In a direction parallel to the second principal surface and oriented from a source electrode to a drain electrode, a distance of the second well region in contact with a gate insulating film is shorter than a distance of the first well region in contact with the gate insulating film.

A photovoltaic device includes an organic semiconductor and an inorganic semiconductor. The organic semiconductor includes a photoactive region that generates excitons. The inorganic semiconductor has piezoelectricity and includes a dissociation region for dissociating carriers included in the excitons. A relationship of energy levels between the photoactive region and the dissociation region satisfies at least one equation E&#x3e;Eor equation E&#x3c;E.

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Kanagawa, Japan

Keisuke Takemoto